IRLTS2242TRPBF [INFINEON]
Power Field-Effect Transistor, 6.9A I(D), 20V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6;
| 型号： | IRLTS2242TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.9A I(D), 20V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLTS2242PbF
HEXFET® Power MOSFET
VDSS
VGS
-20
V
V
A
D
1
2
6
5
4
D
D
± 12
RDS(on) max
(@ VGS = -4.5V)
RDS(on) max
D
S
32
m
3
G
55
12
m
(@ VGS = -2.5V)
Qg (typical)
nC
Top View
TSOP-6
ID
-6.9
A
(@TA = 25°C)
Applications
Battery operated DC motor inverter MOSFET
System/Load Switch
Features
Benefits
Industry-Standard TSOP-6 Package
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
results in
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Standard Pack
Base part number
Package Type
Orderable Part Number
IRLTS2242TRPbF
Form
Quantity
IRLTS2242TRPbF
TSOP-6
Tape and Reel
3000
Absolute Maximum Ratings
Parameter
Max.
- 20
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
VGS
± 12
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
-6.9
-5.5
A
-55
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.02
W/°C
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Notes through are on page 2
1
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IRLTS2242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
-20
Typ.
–––
9.4
26
Max. Units
–––
––– mV/°C Reference to 25°C, ID = -1mA
Conditions
VGS = 0V, ID = -250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
8.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
BVDSS/TJ
RDS(on)
32
55
VGS = -4.5V, ID = -6.9A
VGS = -2.5V, ID = -5.5A
m
45
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
-3.8
–––
–––
–––
–––
–––
12
1.5
4.3
17
5.8
18
-1.1
––– mV/°C
V
VDS = VGS, ID = -10µA
-1.0
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V,TJ= 125°C
VGS = -12V
-150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
100
V
GS = 12V
gfs
Qg
–––
–––
–––
–––
S
V
DS = -10V, ID = -5.5A
VDS = -10V
nC
VGS = -4.5V
Qgs
Qgd
RG
td(on)
tr
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
ID = -5.5A
–––
–––
–––
–––
–––
–––
–––
VDD = -10V, VGS = -4.5V
ns ID = -5.5A
td(off)
tf
Turn-Off Delay Time
Fall Time
81
68
905
280
200
RG = 6.8
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = -10V
ƒ = 1.0KHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
S
–––
–––
-2.0
A
-55
G
ISM
–––
–––
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
41
16
-1.2
62
24
V
TJ = 25°C, IS= -5.5A, VGS=0V
ns TJ = 25°C, IF = -5.5A, VDD = -16V
nC
di/dt = 100A/µs
Thermal Resistance
Junction-to-Ambient
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
RJA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRLTS2242PbF
100
10
1
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
BOTTOM
BOTTOM
-1.40V
-1.40V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
100
I
= -6.9A
D
V
= -4.5V
GS
10
T
= 150°C
J
T
= 25°C
J
V
= -10V
DS
60µs PULSE WIDTH
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = -5.5A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
V
V
= -16V
= -10V
= -4.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
1000
C
C
oss
rss
100
1
10
-V , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRLTS2242PbF
1000
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
= 150°C
J
1msec
1
T
= 25°C
J
10msec
0.1
0.01
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.4
V
, Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.4
8
1.2
1.0
0.8
0.6
6
4
2
0
I
I
I
I
= -10µA
= -250µA
= -1.0mA
= -10mA
D
D
D
D
0.4
0.2
0.0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
J
T
, Ambient Temperature (°C)
A
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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November 18, 2014
IRLTS2242PbF
70
60
50
40
30
20
10
0
450
400
350
300
250
200
150
100
50
I
= -6.9A
D
Vgs = -2.5V
T
= 125°C
J
T
= 25°C
Vgs = -4.5V
J
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
-I , Drain Current (A)
-V
GS,
Gate -to -Source Voltage (V)
D
Fig 12. On–Resistance vs. Gate Voltage
Fig 13. Typical On–Resistance vs. Drain Current
120
16000
14000
12000
10000
8000
6000
4000
2000
0
I
D
TOP
-1.3A
-2.0A
BOTTOM -5.5A
100
80
60
40
20
0
25
50
75
100
125
150
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Starting T , Junction Temperature (°C)
Time (sec)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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IRLTS2242PbF
VDD
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Fig 19b. Switching Time Waveforms
Fig 19a. Switching Time Test Circuit
6
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IRLTS2242PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
DATE CODE MARKING INSTRUCTIONS
Y = YEAR
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = WEEK
WORK
WEEK
PART NUMBER
YEAR
Y
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
LOT
CODE
TOP
PART NUMBER CODE REFERENCE:
A = SI3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
F = IRF5801
G = IRF5803
H = IRF5804
I = IRF5805
J = IRF5806
K = IRF5810
N = IRF5802
O = IRLTS6342TRPBF
24
25
26
X
Y
Z
P = IRFTS8342TRPBF
R = IRFTS9342TRPBF
S = Not applicable
WW = (27-52) IF PRECEDED BY A LETTER
WORK
T = IRLTS2242TRPBF
YEAR
Y
WEEK
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
Note: A line above the work week
(as shown here) indicates Lead-Free.
K
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRLTS2242PbF
TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualifiction Information†
Consumer††
(per JEDEC JESD47F†††guidelines)
Qualification Level
MSL1
TSOP-6
Moisture Sensitivity Level
RoHS Compliant
(per IPC/JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
Updated data sheet with IR corporate template.
Updated figure 12 on page 5 for VGS from “20V” to “12V” due to error.
11/18/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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November 18, 2014
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