IRLZ44NPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLZ44NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94831
IRLZ44NPbF
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
D
VDSS = 55V
RDS(on) = 0.022Ω
G
ID = 47A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levelstoapproximately50watts. Thelowthermalresistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
47
33
A
160
PD @TC = 25°C
Power Dissipation
110
W
W/°C
V
Linear Derating Factor
0.71
±16
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
210
mJ
A
25
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
11
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Min.
Typ.
0.50
Max.
Units
RθJC
RθCS
RθJA
1.4
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
11/11/03
IRLZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.070 V/°C Reference to 25°C, ID = 1mA
1.0
21
0.022
0.025
0.035
2.0
VGS = 10V, ID = 25A
VGS = 5.0V, ID = 25A
VGS = 4.0V, ID = 21A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
25
250
100
-100
48
8.6
25
µA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
VGS = -16V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
11
84
26
15
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.4Ω, VGS = 5.0V
RD = 1.1Ω, See Fig. 10
Between lead,
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
7.5
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
1700
400
150
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
47
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
160
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.3
80 120
210 320
V
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
IRLZ44NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
= 175°C
J
J
1
0.1
1
0.1
A
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 41A
D
TJ= 25°C
100
10
1
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
V
= 10V
GS
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRLZ44NPbF
2800
15
12
9
I
= 25A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
2400
2000
1600
1200
800
400
0
= C + C
ds
gd
C
iss
C
oss
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
V
= 0V
Single Pulse
GS
A
10
1
A
100
0.4
0.8
1.2
1.6
2.0
2.4
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRLZ44NPbF
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ44NPbF
500
400
300
200
100
0
L
I
D
10A
17A
V
DS
TOP
D.U.T.
BOTTOM 25A
R
+
-
G
V
DD
I
5.0 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
V
(BR)DSS
A
175
25
75
100
125
150
t
p
Starting T , Junction Temperature (°C)
J
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLZ44NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLZ44NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN T HE AS S E MBLY LINE "C"
INTERNATIONAL
RE CTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS SE MBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRLZ44NSTRRPBF
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明