IRS2112S [INFINEON]
600 V 高边和低边驱动器 IC,具有典型的 0.29 A 拉电流和 0.6 A 灌电流，采用 16 引脚 SOICWB 封装，适用于 IGBT 和 MOSFET。也有 14 引脚 PDIP 封装可选。;
| 型号： | IRS2112S |
| 厂家： | 
Infineon |
| 描述： | 600 V 高边和低边驱动器 IC,具有典型的 0.29 A 拉电流和 0.6 A 灌电流，采用 16 引脚 SOICWB 封装，适用于 IGBT 和 MOSFET。也有 14 引脚 PDIP 封装可选。 驱动 双极性晶体管 光电二极管 驱动器 |
| 文件： | 总19页 (文件大小：1831K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60251
(
)
IRS2112 -1,-2,S PbF
HIGH AND LOW SIDE DRIVER
Features
Product Summary
· Floating channel designed for bootstrap operation
· Fully operational to +600 V
V
600 V max.
200 mA / 440 mA
10 V - 20 V
OFFSET
· Tolerant to negative transient voltage, dV/dt
immune
I +/-
O
· Gate drive supply range from 10 V to 20 V
· Undervoltage lockout for both channels
· 3.3 V logic compatible
V
OUT
· Separate logic supply range from 3.3 V to 20 V
· Logic and power ground +/- 5 V offset
· CMOS Schmitt-triggered inputs with pull-down
· Cycle by cycle edge-triggered shutdown logic
· Matched propagation delay for both channels
· Outputs in phase with inputs
t
(typ.)
135 ns & 105 ns
30 ns
on/off
Delay Matching
Packages
• RoHS compliant
14-Lead PDIP
IRS2112
Description
The IRS2112 is a high voltage, high speed power
16-Lead PDIP
M
OSFET and IGBT driver with independent high- and
(w/o leads 4 & 5)
IRS2112-2
low-side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down
to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The
14-Lead PDIP
(w/o lead 4)
IRS2112-1
16-Lead SOIC
IRS2112S
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration
which operates up to 600 V.
up to 600 V
Typical Connection
HO
VDD
HIN
SD
VB
VS
VDD
HIN
SD
TO
LOAD
LIN
VSS
VCC
COM
LO
LIN
VSS
VCC
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
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1
IRS2112(-1,-2,S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figs. 28 through 35.
Symbol
Definition
Min.
Max.
Units
V
High-side floating supply voltage
-0.3
625
B
S
V
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
V
- 25
V
+ 0.3
+ 0.3
25
B
B
V
HO
V
- 0.3
V
B
S
V
CC
-0.3
-0.3
-0.3
V
V
LO
V
+ 0.3
+ 25
+ 0.3
+ 0.3
CC
V
DD
Logic supply voltage
V
SS
CC
DD
V
SS
Logic supply offset voltage
V
- 25
V
V
CC
SS
V
IN
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (Fig. 2)
V
- 0.3
dV /dt
s
—
50
V/ns
W
(14 Lead DIP)
—
—
1.6
1.25
75
P
Package power dissipation @ TA £ +25 °C
D
(16 Lead SOIC)
(14 Lead DIP)
(16 Lead SOIC)
—
°C/W
°C
RTH
JA
Thermal resistance, junction to ambient
—
100
150
150
300
T
Junction temperature
—
J
T
S
T
L
Storage temperature
-55
—
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V and V offset ratings are tested with all supplies biased at 15 V differential. Typical
S
SS
ratings at other bias conditions are shown in Figs. 36 and 37.
Symbol
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Min.
Max.
Units
V
V
S
+ 10
V + 20
S
B
S
V
Note 1
600
V
HO
V
S
V
B
V
CC
10
0
20
V
V
LO
V
CC
V
DD
Logic supply voltage
V
SS
+ 3
V
SS
+ 20
V
SS
Logic supply offset voltage
-5 (Note 2)
5
V
Logic input voltage (HIN, LIN & SD)
Ambient temperature
V
V
DD
IN
SS
T
-40
125
°C
A
Note 1: Logic operational for V of -5 V to +600 V. Logic state held for V of -5 V to -V . (Please refer to the Design
BS
S
S
Tip DT97-3 for more details).
Note 2: When VDD < 5 V, the minimum VSS offset is limited to -VDD
.
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2
IRS2112(-1,-2,S)PbF
Dynamic Electrical Characteristics
V
BIAS
(V , V , V ) = 15 V, C = 1000 pF, T = 25 °C and V
= COM unless otherwise specified. The dynamic
CC BS DD SS
L
A
electrical characteristics are measured using the test circuit shown in Fig. 3.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t
Turn-on propagation delay
VS = 0 V
—
—
—
—
—
135
130
130
75
180
160
160
130
65
on
t
off
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
V
S
= 600 V
t
sd
ns
t
r
t
f
Turn-off fall time
35
MT
Delay matching, HS & LS Turn-on/off
—
—
30
Static Electrical Characteristics
V
(V , V , V ) = 15 V, T = 25 °C and V = COM unless otherwise specified. The V , V , and I parameters
BIAS CC BS DD SS IN TH IN
A
are referenced to V and are applicable to all three logic input leads: HIN, LIN, and SD. The V and I parameters are
SS
referenced to COM and are applicable to the respective output leads: HO or LO.
O
O
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
Logic “1” input voltage
9.5
—
—
—
—
—
—
—
—
—
—
—
—
6.0
0.2
0.1
50
IH
V
IL
Logic “0” input voltage
V
V
OH
High level output voltage, V
- V
O
0.05
0.02
—
BIAS
I
O
= 2 mA
V
Low level output voltage, V
O
OL
LK
I
Offset supply leakage current
V
B
= V = 600 V
S
I
I
Quiescent V
Quiescent V
Quiescent V
supply current
supply current
supply current
25
100
180
30
QBS
BS
CC
DD
80
V
IN
= 0 V or V
QCC
DD
µA
I
2.0
20
QDD
I
Logic “1” input bias current
Logic “0” input bias current
40
V = V
IN DD
IN+
I
IN-
—
1.0
V
IN
= 0 V
V
supply undervoltage positive going
BS
threshold
supply undervoltage negative going
V
7.4
7.0
7.6
7.2
200
420
8.5
8.1
8.6
8.2
290
600
9.6
9.2
9.6
9.2
—
BSUV+
V
BS
threshold
supply undervoltage positive going
V
BSUV-
CCUV+
V
V
CC
threshold
supply undervoltage negative going
V
V
CC
V
CCUV-
threshold
V
O
= 0 V, V = V
IN
DD
I
Output high short circuit pulsed current
O+
PW £ 10 µs
mA
V
O
= 15 V, V = 0 V
IN
I
O-
Output low short circuit pulsed current
—
PW £ 10 µs
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3
IRS2112(-1,-2,S)PbF
Functional Block Diagram
VB
UV
DETECT
VDD
R
R
S
Q
HV
LEVEL
SHIFT
HO
PULSE
FILTER
R
Q
S
VDD/VCC
LEVEL
SHIFT
HIN
SD
PULSE
GEN
VS
VCC
UV
DETECT
VDD/VCC
LEVEL
SHIFT
LIN
VSS
LO
S
R
Q
DELAY
COM
Lead Definitions
Symbol Description
V
Logic supply
DD
HIN
SD
Logic input for high-side gate driver output (HO), in phase
Logic input for shutdown
LIN
Logic input for low-side gate driver output (LO), in phase
Logic ground
V
V
SS
B
High-side floating supply
HO
High-side gate drive output
High-side floating supply return
Low-side supply
V
V
S
CC
LO
Low-side gate drive output
COM
Low-side return
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4
IRS2112(-1,-2,S)PbF
Lead Assignments
14 Lead PDIP
16 Lead SOIC (Wide Body)
IRS2112
IRS2112S
16 Lead PDIP w/o leads 4 & 5
14 Lead PDIP w/o lead 4
IRS2112-2
IRS2112-1
Part Number
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5
IRS2112(-1,-2,S)PbF
VCC = 15 V
HV = 10 V to 600 V
10 k F6
6
0.1
mF
10
mF
HIN
LIN
100
mF
200
10 k
mH
0.1
mF
F6
9
3
5
7
10
SD
HO
11
12
dV
s
1
10 k F6
ct
OUTPUT
MONITOR
HO
LO
13
2
IRF820
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test
Circuit
VCC = 15 V
HV = 10 V to 600 V
0.1
VB
10
mF
mF
10
mF
0.1
mF
+
50%
t
50%
HIN
LIN
15 V
9
6
3
-
VS
5
7
10
(0 V to 600 V)
CL
HIN
t
t
t
f
on
off
r
HO
10
mF
11
12
1
SD
90%
90%
LO
LIN
CL
HO
LO
10%
10%
2
13
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
50%
50%
HIN
LIN
50%
SD
LO
HO
t
sd
10%
HO
LO
90%
MT
MT
90%
LO
HO
Figure 5. Shutdown Waveform Definitions
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Figure 6. Delay Matching Waveform Definitions
6
IRS2112(-1,-2,S)PbF
250
200
150
100
50
250
200
150
100
50
M ax
M ax.
Typ.
Typ.
0
0
10
12
14
16
18
20
-50 -25
0
25
50
75
100 125
V
/ V Supply Voltage (V)
Temperature(oC)
CC
BS
Figure 7A. Turn-On Propagation Delay Time
vs. Temperature
Figure 7B. Turn-On Propagation Delay Time
vs. VCC/VBS Supply Voltage
400
250
200
M ax.
300
150
Max.
200
Typ.
100
Typ.
100
0
50
0
-50
-25
0
25
50
75
100 125
0
2
4
6
8
10 12 14 16 18 20
Temperature(oC)
VDD Supply Voltage (V)
Figure 8A. Turn-Off Propagation Delay Time
vs. Temperature
Figure 7C. Turn-On Propagation Delay Time
vs. VDD Supply Voltage
250
400
M ax.
M ax.
200
300
200
100
0
150
Typ.
100
50
0
Typ.
0
2
4
6
8
10 12 14 16 18 20
10
12
14
16
18
20
VDD Supply Voltage (V)
VCC/VBS Supply Voltage (V)
Figure 8B. Turn-Off Propagation Delay Time
vs. VCC/VBS Supply Voltage
Figure 8C. Turn-Off Propagation Delay Time
vs. VDD Supply Voltage
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7
IRS2112(-1,-2,S)PbF
250
250
M ax.
Typ.
200
150
100
50
200
150
100
Max.
Typ .
50
0
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature(oC)
VCC/V BS Supply Voltage (V)
Figure 9A. Shutdown Delay Time
vs. Temperature
Figure 9B. Shutdown Delay Time
vs. VCC/VBS Supply Voltage
400
250
M ax.
200
150
100
50
300
200
100
0
M ax.
Typ.
Typ.
0
0
2
4
6
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100 125
Temperature (oC)
VDD Supply Voltage (V)
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 9C. Shutdown Time vs. VDD Supply Voltage
125
100
75
250
200
M ax
150
M ax.
50
100
Typ
25
50
Typ.
0
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
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8
IRS2112(-1,-2,S)PbF
125
15
100
75
12
9
Min.
M ax
Typ
6
50
3
25
0
0
-50 -25
0
25 50 75 100 125
10
12
14
16
18
20
V
Supply Voltage (V)
BIAS
Temperature (°C)
Figure 11B. Turn-Off Fall Time vs. Supply Voltage
Figure 12A. Logic “I” Input Threshold
vs. Temperature
15
12
9
Min.
Max.
6
3
0
2.5
5
7.5 10 12.5 15 17.5 20
Logic Supply Voltage (V)
-5 0 -25
0
2 5
50
7 5
10 0 1 25
Temperature (°C)
V
DD
Figure 13A. Logic “0” Input Threshold
vs. Temperature
Figure 12B. Logic “I” Input Threshold
vs. Voltage
1.0
0.8
0.6
0.4
0.2
Max.
M ax.
0.0
-50 -25
0
25
50
75
100 125
2.5
5
7.5 10 12.5 15 17.5 20
Temperature (oC)
VDD Logic Supply Voltage (V)
Figure 14A. High Level Output Voltage
Figure 13B. Logic “0” Input Threshold
vs. Voltage
vs. Temperature (I = 2 mA)
o
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9
(
)
IRS2112 -1,-2,S PbF
1.0
0.8
1.0
0.8
0.6
0.4
0.2
0.6
0.4
0.2
M ax
Max
0.0
0.0
-50 -25
0
25
50
75
100 125
10
12
14
VBAIS Supply Voltage (V)
Figure 14B. High Level Output Voltage
16
18
20
Temperature (oC)
Figure 15A. Low Level Output Voltage
vs. Temperature (I = 2 mA)
vs. Supply Voltage (I = 2 mA)
o
o
1.0
0.8
200
150
100
50
0.6
0.4
0.2
Max.
M ax
Typ.
0.0
0
10
12
14
16
18
20
-50 -25
0
25
50
75 100 125
VBAIS Supply Voltage (V)
Temperature (oC)
Figure 15B. Low Level Output Voltage vs.
Supply Voltage ( = 2 mA)
Figure 16A. VBS Supply Current vs. Temperature
I
o
200
150
100
50
100
80
60
Max.
40
Max.
Typ.
20
Typ.
0
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100 125
Tem perature (°C)
V BS Supply Voltage (V)
Figure 16B. VBS Supply Current vs.
Voltage
Figure 17A. VBS Supply Current vs. Temperature
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10
IRS2112(-1,-2,S)PbF
100
80
60
40
20
0
300
250
200
150
100
50
Max.
Typ.
Max.
Typ.
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (°C)
V
Floating Supply Voltage (V)
BS
Figure 18A. VCC Supply Current vs. Temperature
Figure 17B. VBS Supply Current vs. Voltage
300
12
250
200
150
100
50
10
Max.
8
6
Max.
Typ.
Typ.
4
2
0
0
10
12
V
14
16
18
20
-50
-25
0
25
50
75
100 125
Temperature (°C)
Fixed Supply Voltage (V)
cc
Figure 18B. VCC Supply Current vs. Voltage
Figure 19A. VDD Supply Current vs. Temperature
100
80
12
10
8
60
Max.
Typ.
6
Max.
40
4
20
2
Typ.
0
0
0
2
4
6
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100 125
V
Logic Supply Voltage (V)
Temperature (°C)
DD
Figure 19B. VDD Supply Current vs. VDD Voltage
Figure 20A. Logic “I” Input Current vs. Temperature
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11
(
)
IRS2112 -1,-2,S PbF
6
5
4
3
2
1
0
100
80
60
40
20
0
Max
Max.
Typ.
0
2
4
6
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
V
Logic Supply Voltage (V)
DD
Temperature (°C)
Figure 20B. Logic “1” Input Current vs. VDD Voltage
Figure 21A. Logic "0" Input Bias Current
vs. Temperature
6
11
5
4
3
Max
10
9
8
2
1
0
7
6
10
12
14
16
18
20
-50 -25
0
25
50
75
100 125
Supply Voltage (V)
Temperature (°C)
Figure 22. VBS Undervoltage (+) vs. Temperature
Figure 21B. Logic "0" Input Bias Current
vs. Voltage
11
11
10
9
10
Max.
Max.
9
Typ.
Typ.
Min.
8
8
Min.
7
6
7
6
-50 -25
0
25
50
75
(oC)
100 125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature
Figure 23. VBS Undervoltage (-) vs. Temperature
Figure 24. VCC Undervoltage (-) vs. Temperature
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12
IRS2112(-1,-2,S)PbF
11
10
9
500
400
300
200
100
Typ.
M in.
Max.
Typ.
8
Min.
7
0
6
-50 -25
0
25
50
75
100 125
-50
-25
0
25
50
75
100
125
Temperature (oC)
Temperature (°C)
Figure 25. VCC Undervoltage (-) vs. Temperature
Figure 26A. Output Source Current vs.
Temperature
500
400
300
750
Typ.
600
450
300
150
M in.
200
Typ .
100
M in.
0
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
V BIA S Supply Voltage (V)
Figure 27A. Output Sink Current
vs. Temperature
Figure 26B. Output Source Current
vs. Supply Voltage
750
600
450
300
150
Typ.
M in.
0
10
12
14
16
18
20
VBIA S Supply Voltage (V)
Figure 27B. Output Sink Current vs. Supply Voltage
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13
IRS2112(-1,-2,S)PbF
150
125
100
75
150
125
100
75
320 V
140 V
320 V
140 V
10 V
10 V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 28. IRS2112 TJ vs. Frequency (IRFBC20)
RGATE = 33 W, VCC = 15 V
Figure 29. IRS2112 TJ vs. Frequency (IRFBC30)
RGATE = 22 W, VCC = 15 V
320 V 140 V 10 V
320 V
150
150
125
100
75
50
25
0
125
100
75
50
25
0
140 V
10 V
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 30. IRS2112 TJ vs. Frequency (IRFBC40)
RGATE = 15 W, VCC = 15 V
Figure 31. IRS2112 TJ vs. Frequency (IRFPE50)
RGATE = 10 W, VCC = 15 V
320 V 140 V
150
125
100
75
150
125
100
75
320 V
140 V
10 V
10 V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 32. IRS2112S TJ vs. Frequency (IRFBC20)
RGATE = 33 W, VCC = 15 V
Figure 33. IRS2112S TJ vs. Frequency (IRFBC30)
RGATE = 22 W, VCC = 15 V
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14
IRS2112(-1,-2,S)PbF
320 V
320 V 140 V 10 V
150
125
100
75
150
125
100
75
140 V
10 V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 34. IRS2112S TJ vs. Frequency (IRFBC40)
RGATE = 15 W, VCC = 15 V
Figure 35. IRS2112S TJ vs. Frequency (IRFPE50)
RGATE = 10 W, VCC = 15 V
0.0
20.0
-3.0
Typ.
16.0
12.0
8.0
-6.0
-9.0
Typ.
-12.0
-15.0
4.0
0.0
10
12
14
16
18
20
10
12
14
16
18
20
V
V
CC
Floating Supply Voltage (V)
Fixed Supply Voltage (V)
BS
Figure 36. Maximum VS Negative Offset vs.
VBS Supply Voltage
Figure 37. Maximum VSS Positive Offset vs.
VCC Supply Voltage
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15
IRS2112(-1,-2,S)PbF
Case outline
01-6010
01-3002 03 (MS-001AC)
14-Lead PDIP
01-6010
01-3008 02 (MS-001AC)
14-Lead PDIP w/o Lead 4
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16
IRS2112(-1,-2,S)PbF
01-6015
01-3010 02
16 Lead PDIP w/o Leads 4 & 5
01 6015
01-3014 03 (MS-013AA)
16-Lead SOIC (wide body)
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17
IRS2112(-1,-2,S)PbF
LOADED TAPE FEED DIRECTION
B
Tape & Reel
16-Lead SOIC
A
H
D
F
C
N OTE : CONTROLLING
D IMENSION IN MM
E
G
C A R R IE R TA P E D IM E NS IO N FO R 1 6 S O IC W
M etr ic
Im p erial
C o d e
M in
11 .9 0
3 .9 0
15 .7 0
7 .4 0
10 .8 0
10 .6 0
1 .5 0
M ax
1 2.10
4.1 0
1 6.30
7.6 0
1 1.00
1 0.80
n/a
M in
M ax
0 .4 76
0 .1 61
0 .6 41
0 .2 99
0 .4 33
0 .4 25
n/a
A
B
C
D
E
F
0.46 8
0.15 3
0.61 8
0.29 1
0.42 5
0.41 7
0.05 9
0.05 9
G
H
1 .5 0
1.6 0
0 .0 62
F
D
B
C
A
E
G
H
R E E L D IM E NS IO N S FO R 1 6 SO IC W
M etr ic
Im p erial
C o d e
M in
32 9.60
20 .9 5
12 .8 0
1 .9 5
98 .0 0
n /a
18 .5 0
16 .4 0
M ax
3 30 .2 5
2 1.45
1 3.20
2.4 5
1 02 .0 0
2 2.40
2 1.10
1 8.40
M in
1 2 .9 76
0.82 4
0.50 3
0.76 7
3.85 8
n /a
M ax
13 .0 0 1
0 .8 44
0 .5 19
0 .0 96
4 .0 15
0 .8 81
0 .8 30
0 .7 24
A
B
C
D
E
F
G
H
0.72 8
0.64 5
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18
IRS2112(-1,-2,S)PbF
LEADFREE PART MARKING INFORMATION
Part number
Date code
IRSxxxx
YWW?
IR logo
?XXXX
Pin 1
Identifier
Lot Code
(Prod mode - 4 digit SPN code)
?
MARKING CODE
P
Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002
ORDER INFORMATION
14-Lead PDIP IRS2112PbF
14-Lead PDIP IRS2112-1PbF
16-Lead PDIP IRS2112-2PbF
16-Lead SOIC IRS2112SPbF
16-Lead SOIC Tape & Reel IRS2112STRPbF
The SOIC-16 is MSL3 qualified.
This product has been designed and qualified for the industrial level.
Qualification standards can be found at www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 11/27/2006
www.irf.com
19
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