IRSF3010STRL [INFINEON]
暂无描述;型号: | IRSF3010STRL |
厂家: | Infineon |
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文件: | 总11页 (文件大小:437K) |
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Provisional Data Sheet No.PD-6.0027A
IRSF3010
FULLY PROTECTED POWER MOSFET SWITCH
General Description:
Rating Summary:
The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir-
cuit, over-temperature, ESD and over-voltage pro-
tections.
V
50 V
ds(clamp)
R
80 mΩ
11 A
ds(on)
I
ds(sd)
The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex-
ceeds 14A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.
T
j(sd)
155 °C
400 mJ
E
AS
Features:
n Extremely Rugged for Harsh Operating
Environments
n Over Temperature Protection
n Over Current Protection
n Active Drain to Source Clamp
n ESD Protection
The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.
n Compatible with standard POWER
MOSFET
n Low Operating Input Current
n Monolithic Construction
Applications:
n DC Motor Drive
n Solenoid Driver
n Dual set/reset Threshold Input
Drain
Pin Assignment
Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain
Tab
3
2
1
IRSF3010
IRSF3010S
Source
IRSF3010 - Block Diagram
Available Packages
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IRSF3010
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T =
c
25°C unless otherwise specified.)
Symbol
Parameter Definition
Min. Max. Units Test Conditions
V
Continuous Drain to Source Voltage
—
50
10
ds, max
V
V
Continuous Input Voltage
-0.3
—
in, max
I
ds
Continuous Drain Current
self limited
40
P
d
Power Dissipation
—
W
W/°C
mJ
T ≤ 25°C
c
Linear Derating Factor for Tc > 25°C
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
(Machine Model)
—
0.33
E
—
400
AS
V
esd1
—
4000
1000
self-limited
175
1000pF. 1.5kΩ
200pF, 0Ω
V
V
—
esd2
Jop
T
T
Junction Temperature
-55
-55
—
oC
Storage Temperature
Stg
T
L
Lead Temperature (Soldering, 10 seconds)
300
Static Electrical Characteristics
(T = 25°C unless otherwise specified.)
c
Symbol
Parameter Definition
Min. Typ. Max. Units Test Conditions
V
Drain to Source Clamp Voltage
50
—
—
—
—
—
—
—
1.5
—
—
—
—
10
—
54
—
I
= 10mA
ds,clamp
ds
V
56
62
I
ds
= 11A, t = 700 µS
p
R
Drain to Source On Resistance
Drain to Source Leakage Current
70
80
V
= 5V, I = 4A
in ds
ds(on)
85
—
V
= 4V, I = 4A
ds
mΩ
in
53
—
V
= 10V, I = 4A
ds
in
I
—
10
V
= 12V, V = 0V
ds in
dss
µA
—
100
250
2.5
0.6
0.85
1.0
1.2
—
V
= 50V, V = 0V
in
ds
o
10
V
=40V,V =0V,T =150 C
in
ds
c
V
Input Threshold Voltage
2.0
0.25
0.35
0.5
0.6
10.8
1.2
V
V
= 5V, I = 1mA
ds ds
th
I
Input Supply Current (Normal Operation)
V
= 5V
i, on
in
V
= 10V
= 5V
in
mA
V
I
Input Supply Current (Protection Mode)
V
in
i, off
V
= 10V
in
V
Input Clamp Voltage
I
in
= 10mA
in, clamp
sd
V
Body-Drain Diode Forward Drop ➁
1.5
I
ds
= -17A, R = 1kΩ
in
Thermal Characteristics
Symbol
Parameter Definition
Min. Typ. Max. Units
Test Conditions
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
—
—
3.0
60
—
—
°C/W
°C/W
Θjc
R
ΘjA
2
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IRSF3010
Switching Electrical Characteristics:
(V = 14V, Resistive Load R = 5Ω, T = 25 °C.) Please refer to Figure 15 for switching time definitions.
cc
L
c
Symbol
Parameter Definition
Min. Typ. Max. Units Test Conditions
t
Turn-On Delay time
—
—
—
—
—
—
—
—
425
150
650
—
V
= 5V
don
in
V
in
= 10V
= 5V
t
Rise Time
2000 4000
425
650 1000
V
in
r
—
V
in
= 10V
= 5V
= 10V
= 5V
= 10V
nS
t
Turn-Off Delay time
Fall Time
V
in
doff
850
500
450
—
800
—
V
in
t
f
V
in
V
in
Protection Characteristics:
(T = 25 °C unless otherwise specified.)
c
Symbol
Parameter Definition
Over-Current Shutdown Threshold
Over Temperature Shutdown Threshold
Minimum Input Voltage for Over-temp fxn.
Over Current Response Time
Over Current Blanking Time
Min. Typ. Max. Units
Test Conditions
I
11
155
—
14
165
3
17
—
—
—
—
—
—
—
—
A
°C
V
Vin = 5V
V = 5V, Ids = 2A
in
ds(sd)
T
j(sd)
V
protect
t
—
2
See figure 16 for definition
See figure 16 for definition
See figure 16 for definition
Iresp
µS
t
—
3
Iblank
I
Peak Short Circuit Current
—
20
1.3
7
A
V
peak
V
reset
Protection Reset Voltage
—
t
Protection Reset Time
—
See figure 17 for definition
See figure 18 for definition
reset
µS
t
—
12
Tresp
OverTemperature Response Time
Temperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol
Parameter Definition
Min. Typ. Max. Units Test Conditions
V
Temperature Coefficient of Drain to Source
Clamp Voltage
ds,clamp
I = 10mA
ds
—
—
—
—
18.2
-3.2
7.0
—
—
—
V
th
Temperature Coefficient of Input Threshold
Voltage
o
mV/ C
V
ds
= 5V, I = 1mA
ds
V
Temperature Coefficient of Input Clamp
Voltage
in,clamp
I
in
= 10mA
I
Temperature Coefficient of Over-Current
Shutdown Threshold
ds(sd)
o
V = 5V
in
-21.5
—
mA/ C
Notes:
1. E
is tested with a constant current source of 11A applied for 700µS with V = OV and starting T = 25oC.
in
j
AS
2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode
is forward biased.
3
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IRSF3010
120
110
100
90
120
110
100
90
Ids = 4A
T = 25°C
Vin = 4V
Vin = 5V
80
70
80
Vin = 5V
70
60
50
40
60
Vin = 7V
50
40
Vin = 10V
Vin = 10V
14
30
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
16
18
Temperature (°C)
Ids (A)
Fig. 3 - On Resistance vs Drain to Source Current
Fig. 4 - On Resistance vs. Temperature
16
17
15
14
13
12
T = 25°C
Vin = 5V
16
15
14
13
11
10
-50
-25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
Temperature (°C)
Input Voltage (Volts)
Fig. 5 - Over-current Shutdown Threshold vs
Input Voltage
Fig. 6 - Over-current Shutdown Threshold vs
Temperature
1.6
3500
Vdd = 25V
T=25°C
1.4
3000
1.2
1
2500
Ids = 8A
2000
1500
1000
0.8
Iin,off
0.6
0.4
Ids = 12A
500
Iin,on
0.2
Rating
0
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
Starting Junction Temperature (°C)
Input Voltage (Volts)
Figure 7 - Input Current vs. Input Voltage
Fig. 8 - Unclamped Single Pulse Inductive Energy to
Failure vs Starting Junction Temperature
4
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IRSF3010
2.50
2.00
1.50
2.50
2.00
1.50
1.00
0.50
0.00
T = 25°C
Rise Time
Rise Tim e
Vin = 5V
1.00
On De la y
On De la y
0.50
0.00
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
75
100
125
150
Inp ut Volta ge (Vo lts)
Tem pe rature (°C)
Fig. 9 - Turn on characteristics vs Input Voltage
Fig. 10 - Turn on characteristics vs Temperature
0.9
0.9
0.8
T = 25°C
0.8
0.7
0.6
0.5
0.4
0.3
Off De la y
0.7
0.6
0.5
0.4
0.3
Off De la y
Vin = 5V
Fa ll Tim e
Fa ll Time
75
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
100
125
150
Inp ut Volta ge (Vo lts)
Tem pe rature (°C)
Fig. 11 - Turn off characteristics vs Input Voltage
Fig. 12 - Turn off characteristics vs Temperature
10 0
10
Dut y Fa c to r =
0 .5
T = 150°C
1
0.1
DF=
0.50
0.20
0.10
0.05
0.02
0.01
0.00
0 .1
10
T = 25°C
0
1
0.01
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
1E-05
1E-04
1E-03
1E-02
1E-01 1E+00 1E+01
Sourc e to Dra in Vo lta ge (Vo lts)
Pulse Dura tion tp (S)
Fig. 13 - Source-Drain Diode Forward Voltage
Fig. 14 - Transient Thermal Impedance, Junction to Case
5
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IRSF3010
Vin
= 0
Vcc = 14V
RL
Vin
5V
50%
t
t
Vd s
Id s
90%
I p e a k
10%
t
t
t I
b la nk
t I
re sp
td o n tr
td off tf
Sho rt a p p lie d
b e fo re turn-o n
Sho rt a p p lie d
a fte r turn-o n
Fig. 15 - Definition of Switching times.
Fig. 16 - Definition of I
, t
, t
peak
Iblank Iresp
Vin
Vin
5V
5V
t
t
t > t re se t
t < t re se t
I d s(sd )
Id s
Id s
t
t T
re sp
t
TJ = TJSD + 5°C
= 10 Ω
Vcc = 14V
RL
RL = 1 mH
Vcc = 14V
Fig. 17 - Definition of t
reset
Fig. 18 - Definition of t
Tresp
6
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IRSF3010
Case Outline TO-220AB (IRSF3010)
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2.Controllingdimension:INCH
3. Dimensions shown are in millimeters (inches)
4. Conforms to JEDEC outline TO-251AA
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
LEADASSIGNMENTS
1. Gate
2. Drain
3. Source
4. Drain
7
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IRSF3010
Case Outline SMD-220 (IRSF3010S)
8
To Order
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IRSF3010
Tape and Reel SMD-220 (IRSF3010S)
9
To Order
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IRSF3010
Application Information
Block Diagram
The zener diode between the input and the source
(see figure 20) provides the ESD protection for the
input and also limits the applicable voltage to the in-
put to 10V.
Introduction
Protected monolithic POWER MOSFETs offer simple,
cost effective solutions in applications where extreme
operating conditions can occur. The margin between
the operating conditions and the absolute maxi-
mum values can be narrowed resulting in better
utilization of the device and lower cost. ESD protec-
tion also reduces the off-circuit failures during han-
dling and assembly.
The R-S flip-flop memorizes the occurrence of an er-
ror condition and controls the Q2 and Q3 switches.
The flip-flop can be cleared by holding the input low
for the specified minimum duration.
COMP1 and COMP2 comparators are used to com-
pare the over-current and over-temperature signals
with the built-in reference. Either comparator can re-
set the fault flip-flop and turn Q1 off. During fault con-
dition, Q2 disconnects gate of Q1 from the input, Q3
shorts the gate and source of Q1, resulting in rapid
turn-off of Q1. The zener diode between the gate and
drain of Q1 turns Q1 on, when the drain to source
voltage exceeds 55V.
General Description
The IRSF3010 is a fully protected monolithic N-chan-
nel, logic level POWER MOSFET with 80mΩ (max)
on-resistance. The built-in protections include over-
current, over-temperature, ESD and active over-volt-
age protections.
The over-current and over-temperature protection
makes the IRSF3010 indestructible at any load condi-
tions in switching or in linear applications. The built-in
ESD protection minimizes the risk of ESD damage
when the device is off-circuit. The IRSF3010 is fully
characterized for avalanche operation and can be used
for fast de-energization of inductive loads.
Switching Characteristics
In the IRSF3010 the control logic and the protection
circuits are powered from the input pin. When posi-
tive voltage appears at the input pin the R-S flip-flop
turns Q2 on and connects the gate of the main device
to the input.
The IRSF3010 Intelligent Power Switch that is
available in the TO220 package offers an easy up-
grade from non-protected devices.
The turn-on speed is limited by the channel resistance
of Q2 and the gate charge requirements of Q1. The
typical switching waveforms at 5V input voltage are
shown in figure 21. Using higher input voltage will
improve the turn-on time but it does not affect the turn-
off switching speed.
Input voltage 5V/
Drain voltage 5V/
Drain Current: 1A/div.
Time: 1µsV/div.
Fig.21 Waveforms switching clamped indictive
load using 5V input voltage
Fig.20 Block Diagram
10
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IRSF3010
The typical waveforms at over-current shut-down are
shown in figure 23. After turn-on the current in the
inductor at the drain starts ramping up. At about 15A
the over-current protection shuts down the device.
The typical waveforms at 7V input voltage are shown
in figure 22. In typical switching applications, below
40kHz, the difference in switching losses between the
IRSF3010 and the same size standard MOSFET is
negligible.
Over-temperature Protection
Input voltage 5V/
Figure 24 illustrates the operation of the over-tempera-
ture protection. The IRSF3010 switches a 1Ω resis-
tive load to a 12V power supply. When the thermal
balance is established the junction temperature is lim-
ited on pulse by pulse basis.
Drain voltage 5V/
Input voltage 10V/div.
Drain voltage 5V/div.
Drain Current: 1A/
Time: 1µsV/div.
Fig. 22 Switching waveforms with 7V Input
voltage
Over-current Protection
Drain Current: 2A/div.
When the drain current exceeds the preset limit the
protection circuit resets the internal flip-flop and turns
Q1 off. The normal operation can be restored by hold-
ing the input voltage below the specified threshold level
Time: 10µsV/div.
(approx. 1.3V) for the specified minimum t
time.
reset
Fig. 24 Over-temperature shut-down
Over-voltage Protection
Input voltage 5V/div.
When the drain to source voltage exceeds 55V the
zener diode between gate and drain turns the
IRSF3010 on, before the breakdown voltage of the
drain-source diode is reached. This greatly enhances
the energy the device can withstand safely during turn-
off of inductive loads compared to avalanche break-
down. Thus the device can be used for fast de-
energization of inductive loads. The absorbed energy
is limited only by the maximum junction temperature.
Drain voltage 5V/div.
Drain Current: 2A/div.
Time: 10µsV/div.
Fig. 23 Waveforms at over-current shut-down
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Data and specifications subject to change without notice.
12/96
11
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