IRSF3010 [INFINEON]

FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm); 充分保护功率MOSFET开关（VDS = 50V ， RDS（ON） = 80mohm ）


型号：	IRSF3010
厂家：	Infineon
描述：	FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm) 充分保护功率MOSFET开关（VDS = 50V ， RDS（ON） = 80mohm ）开关
文件：	总11页 (文件大小：437K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No.PD-6.0027A

IRSF3010

FULLY PROTECTED POWER MOSFET SWITCH

General Description:

Rating Summary:

The IRSF3010 is a three terminal monolithic

SMART POWER MOSFET with built in short cir-

cuit, over-temperature, ESD and over-voltage pro-

tections.

50 V

ds(clamp)

80 mΩ

11 A

ds(on)

ds(sd)

The on chip protection circuit latches off the

POWER MOSFET in case the drain current ex-

ceeds 14A (typical) or the junction temperature ex-

ceeds 165°C (typical) and keeps it off until the

input is driven low. The drain to source voltage

is actively clamped at 55V (typical), prior to the

avalanche of POWER MOSFET, thus improving

its performance during turn off with inductive

loads.

j(sd)

155 °C

400 mJ

Features:

n Extremely Rugged for Harsh Operating

Environments

n Over Temperature Protection

n Over Current Protection

n Active Drain to Source Clamp

n ESD Protection

The input current requirements are very low

(300uA) which makes the IRSF3010 compatible with

most existing designs based on standard

POWER MOSFETs.

n Compatible with standard POWER

MOSFET

n Low Operating Input Current

n Monolithic Construction

Applications:

n DC Motor Drive

n Solenoid Driver

n Dual set/reset Threshold Input

Drain

Pin Assignment

Pin 1 - Input

Pin 2 - Drain

Pin 3 - Source

Tab - Drain

Tab

IRSF3010

IRSF3010S

Source

IRSF3010 - Block Diagram

Available Packages

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IRSF3010

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T =

25°C unless otherwise specified.)

Symbol

Parameter Definition

Min. Max. Units Test Conditions

Continuous Drain to Source Voltage

—

ds, max

Continuous Input Voltage

-0.3

—

in, max

Continuous Drain Current

self limited

Power Dissipation

—

W/°C

T ≤ 25°C

Linear Derating Factor for Tc > 25°C

Unclamped Single Pulse Inductive Energy

Electrostatic Discharge Voltage (Human Body Model)

(Machine Model)

—

0.33

—

400

esd1

—

4000

1000

self-limited

175

1000pF. 1.5kΩ

200pF, 0Ω

—

esd2

Jop

Junction Temperature

-55

—

^oC

Storage Temperature

Stg

Lead Temperature (Soldering, 10 seconds)

300

Static Electrical Characteristics

(T = 25°C unless otherwise specified.)

Symbol

Parameter Definition

Min. Typ. Max. Units Test Conditions

Drain to Source Clamp Voltage

—

1.5

—

= 10mA

ds,clamp

= 11A, t = 700 µS

Drain to Source On Resistance

Drain to Source Leakage Current

= 5V, I = 4A

in ds

ds(on)

—

= 4V, I = 4A

mΩ

—

= 10V, I = 4A

—

= 12V, V = 0V

ds in

dss

µA

—

100

250

2.5

0.6

0.85

1.0

1.2

—

= 50V, V = 0V

=40V,V =0V,T =150 C

Input Threshold Voltage

2.0

0.25

0.35

0.5

0.6

10.8

1.2

= 5V, I = 1mA

ds ds

Input Supply Current (Normal Operation)

= 5V

i, on

= 10V

= 5V

Input Supply Current (Protection Mode)

i, off

= 10V

Input Clamp Voltage

= 10mA

in, clamp

Body-Drain Diode Forward Drop ➁

1.5

= -17A, R = 1kΩ

Thermal Characteristics

Symbol

Parameter Definition

Min. Typ. Max. Units

Test Conditions

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

—

3.0

—

°C/W

Θjc

ΘjA

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IRSF3010

Switching Electrical Characteristics:

(V = 14V, Resistive Load R = 5Ω, T = 25 °C.) Please refer to Figure 15 for switching time definitions.

Symbol

Parameter Definition

Min. Typ. Max. Units Test Conditions

Turn-On Delay time

—

425

150

650

—

= 5V

don

= 10V

= 5V

Rise Time

2000 4000

425

650 1000

—

= 10V

= 5V

= 10V

= 5V

= 10V

Turn-Off Delay time

Fall Time

doff

850

500

450

—

800

—

Protection Characteristics:

(T = 25 °C unless otherwise specified.)

Symbol

Parameter Definition

Over-Current Shutdown Threshold

Over Temperature Shutdown Threshold

Minimum Input Voltage for Over-temp fxn.

Over Current Response Time

Over Current Blanking Time

Min. Typ. Max. Units

Test Conditions

155

—

165

—

°C

Vin = 5V

V = 5V, Ids = 2A

ds(sd)

j(sd)

protect

—

See figure 16 for definition

Iresp

µS

—

Iblank

Peak Short Circuit Current

—

1.3

peak

reset

Protection Reset Voltage

—

Protection Reset Time

—

See figure 17 for definition

See figure 18 for definition

reset

µS

—

Tresp

OverTemperature Response Time

Temperature Coefficients of Electrical Characteristics:

(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.

Symbol

Parameter Definition

Min. Typ. Max. Units Test Conditions

Temperature Coefficient of Drain to Source

Clamp Voltage

ds,clamp

I = 10mA

—

18.2

-3.2

7.0

—

Temperature Coefficient of Input Threshold

Voltage

mV/ C

= 5V, I = 1mA

Temperature Coefficient of Input Clamp

Voltage

in,clamp

= 10mA

Temperature Coefficient of Over-Current

Shutdown Threshold

ds(sd)

V = 5V

-21.5

—

mA/ C

Notes:

1. E

is tested with a constant current source of 11A applied for 700µS with V = OV and starting T = 25^oC.

2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode

is forward biased.

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IRSF3010

120

110

100

120

110

100

Ids = 4A

T = 25°C

Vin = 4V

Vin = 5V

Vin = 7V

Vin = 10V

-50

-25

100

125

150

Temperature (°C)

Ids (A)

Fig. 3 - On Resistance vs Drain to Source Current

Fig. 4 - On Resistance vs. Temperature

T = 25°C

Vin = 5V

-50

-25

100

125

150

Temperature (°C)

Input Voltage (Volts)

Fig. 5 - Over-current Shutdown Threshold vs

Input Voltage

Fig. 6 - Over-current Shutdown Threshold vs

Temperature

1.6

3500

Vdd = 25V

T=25°C

1.4

3000

1.2

2500

Ids = 8A

2000

1500

1000

0.8

Iin,off

0.6

0.4

Ids = 12A

500

Iin,on

0.2

Rating

100

125

150

Starting Junction Temperature (°C)

Input Voltage (Volts)

Figure 7 - Input Current vs. Input Voltage

Fig. 8 - Unclamped Single Pulse Inductive Energy to

Failure vs Starting Junction Temperature

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IRSF3010

2.50

2.00

1.50

2.50

2.00

1.50

1.00

0.50

0.00

T = 25°C

Rise Time

Rise Tim e

Vin = 5V

1.00

On De la y

0.50

0.00

-50

-25

100

125

150

Inp ut Volta ge (Vo lts)

Tem pe rature (°C)

Fig. 9 - Turn on characteristics vs Input Voltage

Fig. 10 - Turn on characteristics vs Temperature

0.9

0.8

T = 25°C

0.8

0.7

0.6

0.5

0.4

0.3

Off De la y

0.7

0.6

0.5

0.4

0.3

Off De la y

Vin = 5V

Fa ll Tim e

Fa ll Time

-50

-25

100

125

150

Inp ut Volta ge (Vo lts)

Tem pe rature (°C)

Fig. 11 - Turn off characteristics vs Input Voltage

Fig. 12 - Turn off characteristics vs Temperature

10 0

Dut y Fa c to r =

0 .5

T = 150°C

0.1

DF=

0.50

0.20

0.10

0.05

0.02

0.01

0.00

0 .1

T = 25°C

0.01

0.6

0.8

1.2

1.4

1.6

1.8

2.2

1E-05

1E-04

1E-03

1E-02

1E-01 1E+00 1E+01

Sourc e to Dra in Vo lta ge (Vo lts)

Pulse Dura tion tp (S)

Fig. 13 - Source-Drain Diode Forward Voltage

Fig. 14 - Transient Thermal Impedance, Junction to Case

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IRSF3010

V_in

= 0

Vcc = 14V

R_L

V_in

50%

V_{d s}

I_{d s}

90%

I _{p e a k}

10%

t _I

b la nk

t _I

re sp

t_{d o n}t_r

t_{d off}t_f

Sho rt a p p lie d

b e fo re turn-o n

Sho rt a p p lie d

a fte r turn-o n

Fig. 15 - Definition of Switching times.

Fig. 16 - Definition of I

, t

peak

Iblank Iresp

V_in

t > t _{re se t}

t < t _{re se t}

I _{d s(sd )}

I_{d s}

t _T

re sp

T_J= T_JSD+ 5°C

= 10 Ω

Vcc = 14V

R_L

R_L= 1 mH

Vcc = 14V

Fig. 17 - Definition of t

reset

Fig. 18 - Definition of t

Tresp

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IRSF3010

Case Outline TO-220AB (IRSF3010)

NOTES:

1. Dimensioning and tolerancing per ANSI Y14.5M, 1982

2.Controllingdimension:INCH

3. Dimensions shown are in millimeters (inches)

4. Conforms to JEDEC outline TO-251AA

5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)

LEADASSIGNMENTS

1. Gate

2. Drain

3. Source

4. Drain

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IRSF3010

Case Outline SMD-220 (IRSF3010S)

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IRSF3010

Tape and Reel SMD-220 (IRSF3010S)

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IRSF3010

Application Information

Block Diagram

The zener diode between the input and the source

(see figure 20) provides the ESD protection for the

input and also limits the applicable voltage to the in-

put to 10V.

Introduction

Protected monolithic POWER MOSFETs offer simple,

cost effective solutions in applications where extreme

operating conditions can occur. The margin between

the operating conditions and the absolute maxi-

mum values can be narrowed resulting in better

utilization of the device and lower cost. ESD protec-

tion also reduces the off-circuit failures during han-

dling and assembly.

The R-S flip-flop memorizes the occurrence of an er-

ror condition and controls the Q2 and Q3 switches.

The flip-flop can be cleared by holding the input low

for the specified minimum duration.

COMP1 and COMP2 comparators are used to com-

pare the over-current and over-temperature signals

with the built-in reference. Either comparator can re-

set the fault flip-flop and turn Q1 off. During fault con-

dition, Q2 disconnects gate of Q1 from the input, Q3

shorts the gate and source of Q1, resulting in rapid

turn-off of Q1. The zener diode between the gate and

drain of Q1 turns Q1 on, when the drain to source

voltage exceeds 55V.

General Description

The IRSF3010 is a fully protected monolithic N-chan-

nel, logic level POWER MOSFET with 80mΩ (max)

on-resistance. The built-in protections include over-

current, over-temperature, ESD and active over-volt-

age protections.

The over-current and over-temperature protection

makes the IRSF3010 indestructible at any load condi-

tions in switching or in linear applications. The built-in

ESD protection minimizes the risk of ESD damage

when the device is off-circuit. The IRSF3010 is fully

characterized for avalanche operation and can be used

for fast de-energization of inductive loads.

Switching Characteristics

In the IRSF3010 the control logic and the protection

circuits are powered from the input pin. When posi-

tive voltage appears at the input pin the R-S flip-flop

turns Q2 on and connects the gate of the main device

to the input.

The IRSF3010 Intelligent Power Switch that is

available in the TO220 package offers an easy up-

grade from non-protected devices.

The turn-on speed is limited by the channel resistance

of Q2 and the gate charge requirements of Q1. The

typical switching waveforms at 5V input voltage are

shown in figure 21. Using higher input voltage will

improve the turn-on time but it does not affect the turn-

off switching speed.

Input voltage 5V/

Drain voltage 5V/

Drain Current: 1A/div.

Time: 1µsV/div.

Fig.21 Waveforms switching clamped indictive

load using 5V input voltage

Fig.20 Block Diagram

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IRSF3010

The typical waveforms at over-current shut-down are

shown in figure 23. After turn-on the current in the

inductor at the drain starts ramping up. At about 15A

the over-current protection shuts down the device.

The typical waveforms at 7V input voltage are shown

in figure 22. In typical switching applications, below

40kHz, the difference in switching losses between the

IRSF3010 and the same size standard MOSFET is

negligible.

Over-temperature Protection

Input voltage 5V/

Figure 24 illustrates the operation of the over-tempera-

ture protection. The IRSF3010 switches a 1Ω resis-

tive load to a 12V power supply. When the thermal

balance is established the junction temperature is lim-

ited on pulse by pulse basis.

Drain voltage 5V/

Input voltage 10V/div.

Drain voltage 5V/div.

Drain Current: 1A/

Time: 1µsV/div.

Fig. 22 Switching waveforms with 7V Input

voltage

Over-current Protection

Drain Current: 2A/div.

When the drain current exceeds the preset limit the

protection circuit resets the internal flip-flop and turns

Q1 off. The normal operation can be restored by hold-

ing the input voltage below the specified threshold level

Time: 10µsV/div.

(approx. 1.3V) for the specified minimum t

time.

reset

Fig. 24 Over-temperature shut-down

Over-voltage Protection

Input voltage 5V/div.

When the drain to source voltage exceeds 55V the

zener diode between gate and drain turns the

IRSF3010 on, before the breakdown voltage of the

drain-source diode is reached. This greatly enhances

the energy the device can withstand safely during turn-

off of inductive loads compared to avalanche break-

down. Thus the device can be used for fast de-

energization of inductive loads. The absorbed energy

is limited only by the maximum junction temperature.

Drain voltage 5V/div.

Drain Current: 2A/div.

Time: 10µsV/div.

Fig. 23 Waveforms at over-current shut-down

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Data and specifications subject to change without notice.

12/96

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IRSF3010 [INFINEON]

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