IRU3018CWTR [INFINEON]
Switching Controller, Voltage-mode, 200kHz Switching Freq-Max, PDSO24, PLASTIC, SOIC-24;型号: | IRU3018CWTR |
厂家: | Infineon |
描述: | Switching Controller, Voltage-mode, 200kHz Switching Freq-Max, PDSO24, PLASTIC, SOIC-24 开关 光电二极管 |
文件: | 总18页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet No. PD94144
IRU3018
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC,
LDO CONTROLLER AND 200mA ON-BOARD LDO REGULATOR
FEATURES
DESCRIPTION
Provides single chip solution for Vcore, GTL+ & clock The IRU3018 controller IC is specifically designed to meet
supply
Intel specification for Pentium IIä microprocessor appli-
200mA On-Board LDO Regulator
cations as well as the next generation of P6 family pro-
Designed to meet the latest Intel specification for cessors. The IRU3018 provides a single chip controller
Pentium IIä IC for the Vcore, LDO controller for GTL+ and an internal
On-Board DAC programs the output voltage from 200mA regulator for clock supply which are required for
1.3V to 3.5V the Pentium II applications. These devices feature a pat-
Linear regulator controller on board for 1.5V GTL+ ented topology that in combination with a few external
supply
components as shown in the typical application circuit,
will provide in excess of 18A of output current for an on-
Loss-less Short Circuit Protection with HICCUP
Synchronous operation allows maximum efficiency board DC-DC converter while automatically providing the
patented architecture allows fixed frequency opera- right output voltage via the 5-bit internal DAC. The
tion as well as 100% duty cycle during dynamic IRU3018 also features loss-less current sensing for both
load
Soft-Start
switchers by using the RDS(ON) of the high-side power
MOSFET as the sensing resistor, internal current limit-
High current totem pole driver for direct driving of the ing for the clock supply, and a Power Good window com-
external power MOSFET
Power Good Function monitors all outputs
parator that switches its open collector output low when
any one of the outputs is outside of a pre-programmed
Over-Voltage Protection circuitry protects the window. Other features of the device are: Under-voltage
switcher output and generates a fault signal
Thermal Shutdown
Logic Level Enable Input
lockout for both 5V and 12V supplies, an external pro-
grammable soft-start function, programming the oscilla-
tor frequency via an external resistor, Over-Voltage Pro-
tection (OVP) circuitry for both switcher outputs and an
internal thermal shutdown.
APPLICATIONS
Total Power Solution for Pentium II processor
application
TYPICAL APPLICATION
5V
Note:Pentium II is trademark of Intel Corp
IRU3018
SWITCHER1
CONTROL
VOUT1
3.3V
LINEAR
CONTROL
LINEAR
REGULATOR
VOUT2
VOUT3
Figure 1 - Typical application of IRU3018.
PACKAGE ORDER INFORMATION
TA (8C)
DEVICE
PACKAGE
0 To 70
IRU3018CW
24-Pin Plastic SOIC WB
Rev. 1.6
07/16/02
www.irf.com
1
IRU3018
ABSOLUTE MAXIMUM RATINGS
V5 Supply Voltage .................................................... 7V
V12 Supply Voltage .................................................. 20V
Storage Temperature Range ...................................... -65°C To 150°C
Operating Junction Temperature Range .....................
0°C To 125°C
PACKAGE INFORMATION
24-PIN WIDE BODY PLASTIC SOIC (W)
TOP VIEW
V12
VID4
VID3
VID2
VID1
VID0
PGood
V5
1
2
3
4
5
6
7
8
9
24 UGate1
23 Phase1
22
LGate1
21 PGnd
20 OCSet1
19
VSEN1
18 Fb1
17 En
16
SS
Fb3
Fault / Rt 10
Fb2 11
15 Gate3
14 Gnd
12
13
VOUT2
VIN2
θJA =808C/W
ELECTRICAL SPECIFICATIONS
Unless otherwise specified, these specifications apply over V12=12V, V5=5V and TA=0 to 70°C. Typical values refer
to TA=25°C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the ambient
temperature.
PARAMETER
SYM
TEST CONDITION
MIN
TYP
MAX UNITS
Supply UVLO Section
UVLO Threshold-12V
UVLO Hysteresis-12V
UVLO Threshold-5V
UVLO Hysteresis-5V
Supply Current
Supply Ramping Up
10
V
V
V
V
0.4
4.3
0.3
Supply Ramping Up
Operating Supply Current
I12
I5
V12
V5
6
20
mA
Switching Controllers; Vcore (VOUT1)
VID Section
DAC Output Voltage (Note 1)
DAC Output Line Regulation
DAC Output Temp Variation
VID Input LO
VDAC
0.99Vs
2
Vs 1.01Vs
V
%
%
V
0.1
0.5
0.8
VID Input HI
V
VID Input Internal Pull-Up
Resistor to V5
27
KΩ
Error Comparator Section
Input Bias Current
Input Offset Voltage
Delay to Output
2
+2
100
µA
mV
ns
-2
VDIFF=10mV
Oscillator Section (Internal)
Osc Frequency
200
KHz
Rev. 1.6
07/16/02
www.irf.com
2
IRU3018
PARAMETER
SYM
TEST CONDITION
MIN
TYP
200
10
MAX UNITS
Current Limit Section
CS Threshold Set Current
CS Comp Offset Voltage
Hiccup Duty Cycle
µA
-5
+5
mV
%
Css=0.1µF
Output Drivers Section
Rise Time
Fall Time
Dead Band Time Between
High Side and Synch Drive
Vcore Switcher Only
2.5V Regulator (VOUT2)
Reference Voltage
CL=3000pF
CL=3000pF
CL=3000pF
70
70
200
ns
ns
ns
VO2
TA=258C, VOUT2=Fb2
1.260
1.260
0.6
V
V
V
Reference Voltage
Dropout Voltage
Io=200mA
Load Regulation
Line Regulation
1mA< Io <200mA
3.1V<VIN2<4V, Vo=2.5V
0.5
0.2
%
%
Input Bias Current
Output Current
Current Limit
Thermal Shutdown
1.5V Regulator (VOUT3)
Reference Voltage
Reference Voltage
2
2
µA
mA
mA
8C
200
300
145
VO3 TA=258C, Gate3=Fb3
1.260
1.260
V
V
µA
mA
Input Bias Current
Output Drive Current
Power Good Section
Core UV Lower Trip Point
Core UV Upper Trip Point
Core UV Hysterises
Core OV Upper Trip Point
Core OV Lower Trip Point
Core OV Hysterises
Fb2 Lower Trip Point
Fb2 Upper Trip Point
Fb3 Lower Trip Point
Fb3 Upper Trip Point
Power Good Output LO
Power Good Output HI
Fault (Overvoltage) Section
Core OV Upper Trip Point
Core OV Lower Trip Point
VIN2 Upper Trip Point
VIN2 Lower Trip Point
Fault Output HI
50
VSEN1 Ramping Down
VSEN1 Ramping Up
0.90Vs
0.92Vs
0.02Vs
1.10Vs
1.08Vs
0.02Vs
0.95
1.05
0.95
1.05
0.4
V
V
V
V
V
V
V
V
V
V
V
V
VSEN1 Ramping Up
VSEN1 Ramping Down
Fb2 Ramping Down
Fb2 Ramping Up
Fb3 Ramping Down
Fb3 Ramping Up
RL=3mA
RL=5K, Pull-Up to 5V
4.8
VSEN1 Ramping Up
VSEN1 Ramping Down
VIN2 Ramping Up
VIN2 Ramping Down
Io=3mA
1.17Vs
1.15Vs
4.3
4.2
10
V
V
V
V
V
Soft-Start Section
Pull-Up Resistor to 5V
Enable Section
OCSet=0V, Phase=5V
23
KΩ
En Pin Input LO Voltage
En Pin Input HI Voltage
En Pin Input LO Current
En Pin Input HI Current
VEN(L) Regulator OFF
VEN(H) Regulator ON
VEN=0V to 0.8V
0.8
V
V
µA
µA
2
0.01
20
VEN=2V to 5V
Note 1: Vs refers to the set point voltage given in Table 1
Rev. 1.6
07/16/02
www.irf.com
3
IRU3018
D4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
D3
D2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs
D4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
D3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
Table 1 - Set point voltage vs. VID codes
PIN DESCRIPTIONS
PIN#
PIN SYMBOL
PIN DESCRIPTION
1
V12
This pin is connected to the 12V supply and serves as the power Vcc pin for the output
drivers. A high frequency capacitor (typically 1µF) must be placed close to this pin and
PGnd pin and be connected directly from this pin to the ground plane for noise free opera-
tion.
2
VID4
This pin selects a range of output voltages for the DAC. When in the Low state, the range
is 1.3V to 2.05V and when it switches to Hi state, the range is 2V to 3.5V. This pin is TTL
compatible that realizes a logic “1” as either Hi or Open. When left open, this pin is pulled
up internally by a 27KΩ resistor to 5V supply.
3
4
5
6
7
VID3
VID2
MSB input to the DAC that programs the output voltage. This pin is TTL compatible that
realizes a logic “1” as either Hi or Open. When left open, this pin is pulled up internally by
a 27KΩ resistor to 5V supply.
Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes
a logic “1” as either Hi or Open. When left open, this pin is pulled up internally by a 27KΩ
resistor to 5V supply.
Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes
a logic “1” as either Hi or Open. When left open, this pin is pulled up internally by a 27KΩ
resistor to 5V supply.
LSB input to the DAC that programs the output voltage. This pin is TTL compatible that
realizes a logic “1” as either Hi or Open. When left open, this pin is pulled up internally by
a 27KΩ resistor to 5V supply.
VID1
VID0
PGood
This pin is an open collector output that switches Low when any of the outputs are outside
of the specified under-voltage trip point. It also switches Low when VSEN1 pin is more than
10% above DAC voltage setting.
8
9
V5
SS
5V supply voltage. A high frequency capacitor (0.1 to 1µF) must be placed close to this
pin and connected from this pin to the ground plane for noise free operation.
This pin provides the soft-start for the switching regulator. An internal resistor charges an
external capacitor that is connected from 5V supply to this pin which ramps up the out-
puts of the switching regulators, preventing the outputs from overshooting as well as
limiting the input current. The second function of the soft-start cap is to provide long off
time (HICCUP) for the synchronous MOSFET during current limiting.
Rev. 1.6
07/16/02
www.irf.com
4
IRU3018
PIN#
PIN SYMBOL
PIN DESCRIPTION
10
Fault / Rt
This pin has dual function. It acts as an output of the OVP circuitry or it can be used to
program the frequency using an external resistor. When used as a fault detector, if the
switcher output exceeds the OVP trip point, the Fault pin switches to 12V and the soft-
start cap is discharged. If the Fault pin is to be connected to any external circuitry, it
needs to be buffered as shown in the application circuit.
11
12
Fb2
VIN2
This pin provides the feedback for the internal LDO regulator which its output is VOUT4.
This pin is the input that provides power for the internal LDO regulator. It is also monitored
for the under-voltage and over-voltage conditions.
13
14
15
16
17
VOUT2
Gnd
Gate3
Fb3
This pin is the output of the internal LDO regulator.
This pin serves as the ground pin and must be connected directly to the ground plane.
This pin controls the gate of an external transistor for the 1.5V GTL+ linear regulator.
This pin provides the feedback for the linear regulator which its output drive is Gate3.
This pin is a TTL compatible Enable pin. When this pin is left open or pulled high, the
device is enabled and when it is pulled low, it will disable the switcher and the LDO
controller (VOUT3) leaving the internal 200mA regulator operational. When signal is given to
enable the device, both switcher and VOUT3 will go through soft-start, the same as during
start-up.
En
18
Fb1
This pin provides the feedback for the synchronous switching regulator. Typically this pin
can be connected directly to the output of the switching regulator. However, a resistor
divider is recommended to be connected from this pin to VOUT1 and Gnd to adjust the
output voltage for any drop in the output voltage that is caused by the trace resistance.
The value of the resistor connected from VOUT1 to Fb1 must be less than 100Ω.
This pin is internally connected to the under-voltage and over-voltage comparators sens-
ing the Vcore status. It must be connected directly to the Vcore supply.
This pin is connected to the Drain of the power MOSFET of the Core supply and it provides
the positive sensing for the internal current sensing circuitry. An external resistor pro-
grams the CS threshold depending on the RDS of the power MOSFET. An external capaci-
tor is placed in parallel with the programming resistor to provide high frequency noise
filtering.
19
20
VSEN1
OCSet1
21
PGnd
This pin serves as the Power ground pin and must be connected directly to the ground
plane close to the source of the synchronous MOSFET. A high frequency capacitor (typi-
cally 1µF) must be connected from V12 pin to this pin for noise free operation.
Output driver for the synchronous power MOSFET for the Core supply.
This pin is connected to the Source of the power MOSFET for the Core supply and it
provides the negative sensing for the internal current sensing circuitry.
22
23
LGate1
Phase1
24
UGate1
Output driver for the high side power MOSFET for the Core supply.
Rev. 1.6
07/16/02
www.irf.com
5
IRU3018
BLOCK DIAGRAM
4.3V
18
24
Fb1
17
1
Enable
V12
V12
En
V12
V5
Over
Voltage
Vset
Enable
UGate1
UVLO
1.17Vset
2.5V
8
PWM
Control
+
Vset
22
Slope
Comp
LGate1
6
5
4
3
2
VID0
VID1
VID2
VID3
VID4
Osc
23
20
Phase1
OCSet1
5Bit
DAC
Over
Current
Soft
Start &
Fault
1.1Vset
Enable
200uA
Logic
19
16
15
12
V
SEN1
10
9
Fault / Rt
SS
Fb3
0.9Vset
0.9V
V12
V5
Gate3
1.26V
21
14
PGnd
Gnd
VIN2
13
11
7
V
OUT
2
Fb2
PGood
Figure 2 - Simplified block diagram of the IRU3018.
Rev. 1.6
07/16/02
www.irf.com
6
IRU3018
TYPICAL APPLICATION
R22
12V
L1
C8
R12
C10
R13
C14
5V
C2
C3
V12
OCSet1
Q3
Q4
UGate1
Phase1
LGate1
L3
V5
VOUT1
1.8V - 3.5V
C16
R14
C19
C13
R15
U1
IRU3018
R16
R21
PGnd
VSEN1
Fb1
Fault/Rt
VIN2
3.3V
R17
C1
Q2
Gate3
Fb3
C15
En
PGood
VID0
R19
R5
PGood
VOUT3
1.5V
C17
R6
VID1
VID2
VID3
VOUT4
2.5V
VOUT2
Fb2
VID4
SS
C18
Gnd
R7
R8
5V
C9
Figure 3 - Typical application of IRU3018 for an on board DC-DC converter providing power for the Vcore, GTL+ &
Clock supply for the Deschutes and the next generation processor applications.
Rev. 1.6
07/16/02
www.irf.com
7
IRU3018
IRU3018 APPLICATION PARTS LIST
Ref Desig Description
Qty
Part #
Manuf
Q2
Q3
Q4
L1
MOSFET
1
IRLR024, TO-252 package
IR
MOSFET
1
1
1
IRL3103S, TO-263 package
IRL3103D1S, TO-263 package
L=1µH, 5052 core with 4 turns of
1.0mm wire
IR
IR
MOSFET with Schottky
Inductor
Micro Metal
L3
Inductor
1
L=2.7µH, 5052B core with 7 turns
of 1.2mm wire
Micro Metal
C1,17
C2
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Ceramic
2
1
1
1
3
1
1
2
6
1
1
3
1
3
3
1
6MV1000GX, 1000µF, 6.3V
10MV470GX, 470µF, 10V
10MV1200GX, 1200µF, 10V
1µF, 0805
Sanyo
Sanyo
Sanyo
C3
C8
C9,15,19 Capacitor, Ceramic
1µF, 0603
C10
C13
C14
C16
C18
R5
Capacitor, Ceramic
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Resistor
220pF, 0603
1000pF, 0603
10MV1200GX, 1200µF, 10V
6MV1500GX, 1500µF, 6.3V
6MV150GX, 150µF, 6.3V
19.1Ω, 1%, 0603
Sanyo
Sanyo
Sanyo
R6,7,8
R12
Resistor
100Ω, 1%, 0603
Resistor
3.3KΩ, 5%, 0603
R13,14,15 Resistor
R16,17,21 Resistor
4.7Ω, 5%, 1206
2.2KΩ, 1%, 0603
R22
Resistor
10Ω, 5%, 0603
Rev. 1.6
07/16/02
www.irf.com
8
IRU3018
TYPICAL APPLICATION
(Dual Layout with HIP6018)
R22
12V
L1
C8
R12
C10
C14
5V
C2
C3
V12
OCSet1
R11
R13
Q3
UGate1
Phase1
LGate1
L3
V5
VOUT1
(Fault)
1.8V - 3.5V
C16
R14
C19
C13
R15
Q4
R16
R21
Fault/Rt
(Rt)
PGnd
VSEN1
Fb1
U1
IRU3018
R17
3.3V
VIN2
C1
C12
R18
C15
R19
Q2
Gate3
Fb3
En
(Comp1)
R5
C11
VOUT3
1.5V
C17
R6
PGood
VID0
VID1
VID2
VID3
VID4
SS
PGood
VOUT4
2.5V
VOUT2
Fb2
Gnd
C18
R7
R8
5V
C20
C9
Figure 4 - Typical application of IRU3018 in a dual layout with HIP6018 for an on-board DC-DC converter providing
power for the Vcore, GTL+ & Clock supply for the Deschutes and the next generation processor applications.
Part #
R11
R18
C9
C11
C12
C19
C20
HIP6018
O
V
O
V
V
O
V
IRU3018
S
O
V
O
O
V
O
S - Short O - Open V - See IR or Harris parts list for the value
Table 2 - Dual layout component table. Components that need to be modified to make
the dual layout work for IRU3018 and HIP6018.
Rev. 1.6
07/16/02
www.irf.com
9
IRU3018
IRU3018 APPLICATION PARTS LIST
Dual Layout with HIP6018
Ref Desig Description
Qty
Part #
Manuf
Q2
Q3
Q4
L1
MOSFET
1
IRLR024, TO-252 package
IR
MOSFET
1
1
1
IRL3103S, TO-263 package
IRL3103D1S, TO-263 package
L=1µH, 5052 core with 4 turns of
1.0mm wire
IR
IR
MOSFET with Schottky
Inductor
Micro Metal
L3
Inductor
1
L=2.7µH, 5052B core with 7 turns of
1.2mm wire
Micro Metal
C1,17
C2
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Ceramic
2
1
1
1
3
1
3
6MV1000GX, 1000uF, 6.3V
10MV470GX, 470µF, 10V
10MV1200GX, 1200µF, 10V
1µF, 0805
Sanyo
Sanyo
Sanyo
C3
C8
C9,15,19 Capacitor, Ceramic
C10 Capacitor, Ceramic
C11,12,20 Capacitor, Ceramic
1µF, 0603
220pF, 0603
See Table 2, dual layout component
0603 × 3
C13
C14
C16
C18
R5
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Resistor
1
2
6
1
1
3
1
1
3
3
1
1000pF, 0603
10MV1200GX, 1200µF, 10V
6MV1500GX, 1500µF, 6.3V
6MV150GX, 150µF, 6.3V
19.1Ω, 1%, 0603
Sanyo
Sanyo
Sanyo
R6,7,8
R11
Resistor
100Ω, 1%, 0603
Resistor
0Ω, 0603
R12
Resistor
3.3KΩ, 5%, 0603
R13,14,15 Resistor
R16,17,21 Resistor
4.7Ω, 5%, 1206
2.2KΩ, 1%, 0603
R18
Resistor
See Table 2, dual layout component
0603 × 1
R19
R22
Resistor
Resistor
1
1
220KΩ, 1%, 0603
10Ω, 5%, 0603
Rev. 1.6
07/16/02
www.irf.com
10
IRU3018
APPLICATION INFORMATION
An example of how to calculate the components for the ing during the load transient eases the requirement for
application circuit is given below.
the output capacitor ESR at the cost of load regulation.
One can show that the new ESR requirement eases up
Assuming, two set of output conditions that this regula- by half the total trace resistance. For example, if the
tor must meet for Vcore:
ESR requirement of the output capacitors without volt-
age level shifting must be 7mΩ then after level shifting
the new ESR will only need to be 8.5mΩ if the trace
resistance is 5mΩ (7+5/2=9.5). However, one must be
a) Vo=2.8V, Io=14.2A, ∆Vo=185mV, ∆Io=14.2A
b) Vo=2V, Io=14.2A, ∆Vo=140mV, ∆Io=14.2A
The regulator design will be done such that it meets the careful that the combined “voltage level shifting” and the
worst case requirement of each condition.
transient response is still within the maximum tolerance
of the Intel specification. To insure this, the maximum
trace resistance must be less than:
Output Capacitor Selection
The first step is to select the output capacitor. This is
done primarily by selecting the maximum ESR value
that meets the transient voltage budget of the total ∆Vo
specification. Assuming that the regulators DC initial
accuracy plus the output ripple is 2% of the output volt-
age, then the maximum ESR of the output capacitor is
calculated as:
Rs ≤ 2×(Vspec - 0.02×Vo - ∆Vo) / ∆I
Where:
Rs = Total maximum trace resistance allowed
Vspec = Intel total voltage spec
Vo = Output voltage
∆Vo = Output ripple voltage
∆I = load current step
100
14.2
ESR ≤
= 7mΩ
For example, assuming:
Vspec = ±140mV = ±0.1V for 2V output
Vo = 2V
The Sanyo MVGX series is a good choice to achieve
both the price and performance goals. The 6MV1500GX,
1500µF, 6.3V has an ESR of less than 36mΩ typical.
Selecting 6 of these capacitors in parallel has an ESR
of » 6mΩ which achieves our low ESR goal.
∆Vo = assume 10mV = 0.01V
∆I = 14.2A
Then the Rs is calculated to be:
Other type of Electrolytic capacitors from other manu-
facturers to consider are the Panasonic FA series or the
Nichicon PL series.
Rs ≤ 2×(0.140 - 0.02×2 - 0.01) / 14.2 = 12.6mΩ
However, if a resistor of this value is used, the maximum
power dissipated in the trace (or if an external resistor is
Reducing the Output Capacitors Using Voltage Level being used) must also be considered. For example if
Shifting Technique
Rs=12.6mΩ, the power dissipated is:
The trace resistance or an external resistor from the output
of the switching regulator to the Slot 1 can be used to
Io2×Rs = 14.22×12.6 = 2.54W
the circuit advantage and possibly reduce the number of This is a lot of power to be dissipated in a system. So, if
output capacitors, by level shifting the DC regulation point the Rs=5mΩ, then the power dissipated is about 1W
when transitioning from light load to full load and vice which is much more acceptable. If level shifting is not
versa. To accomplish this, the output of the regulator is implemented, then the maximum output capacitor ESR
typically set about half the DC drop that results from was shown previously to be 7mΩ which translated to » 6
light load to full load. For example, if the total resistance of the 1500µF, 6MV1500GX type Sanyo capacitors. With
from the output capacitors to the Slot 1 and back to the Rs=5mΩ, the maximum ESR becomes 9.5mΩ which is
Gnd pin of the IRU3018 is 5mΩ and if the total ∆I, the equivalent to » 4 caps. Another important consideration
change from light load to full load is 14A, then the output is that if a trace is being used to implement the resistor,
voltage measured at the top of the resistor divider which the power dissipated by the trace increases the case
is also connected to the output capacitors in this case, temperature of the output capacitors which could seri-
must be set at half of the 70mV or 35mV higher than the ously effect the life time of the output capacitors.
DAC voltage setting. This intentional voltage level shift-
Rev. 1.6
07/16/02
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11
IRU3018
Output Inductor Selection
In our example for Vo=2.8V and 14.2 A load, assuming
The output inductance must be selected such that un- IRL3103 MOSFET for both switches with maximum on
der low line and the maximum output voltage condition, resistance of 19mΩ, we have:
the inductor current slope times the output capacitor
T = 1 / 200000 = 5µs
ESR is ramping up faster than the capacitor voltage is
drooping during a load current step.
Vsw = Vsync = 14.2×0.019 = 0.27V
D » (2.8 + 0.27) / (5 - 0.27 + 0.27) = 0.61
TON = 0.61×5 = 3.1µs
However, if the inductor is too small, the output ripple
current and ripple voltage become too large. One solu-
tion to bring the ripple current down is to increase the
switching frequency, however that will be at the cost of
reduced efficiency and higher system cost. The follow-
TOFF = 5 - 3.1 = 1.9µs
∆Ir = (2.8 + 0.27)×1.9 / 3 = 1.94A
∆Vo = 1.94×0.006 = 0.011V = 11mV
ing set of formulas are derived to achieve the optimum Power Component Selection
performance without many design iterations. Assuming IRL3103 MOSFETs as power components,
we will calculate the maximum power dissipation as fol-
The maximum output inductance is calculated using the lows:
following equation:
For high-side switch the maximum power dissipation
happens at maximum Vo and maximum duty cycle.
L = ESR×C×(VIN(MIN) - Vo(MAX)) / ( 2×∆I )
Where:
DMAX » (2.8 + 0.27) / (4.75 - 0.27 + 0.27) = 0.65
PDH = DMAX×Io2×RDS(MAX)
VIN(MIN) = Minimum input voltage
For Vo=2.8V, ∆I=14.2A:
PDH = 0.65×14.22×0.029 = 3.8W
L = 0.006×9000×(4.75 - 2.8) / (2×14.2) = 3.7µH
RDS(MAX) = Maximum RDS(ON) of the MOSFET at 1258C
Assuming that the programmed switching frequency is
set at 200KHz, an inductor is designed using the For synch MOSFET, maximum power dissipation hap-
Micrometals’ Powder Iron core material. The summary pens at minimum Vo and minimum duty cycle.
of the design is outlined below:
DMIN » (2 + 0.27) / (5.25 - 0.27 + 0.27) = 0.43
PDS = (1-DMIN)×Io2×RDS(MAX)
The selected core material is Powder Iron, the selected
core is T50-52D from Micro Metal wound with 8 turns of
PDS = (1 - 0.43)×14.22×0.029 = 3.33 W
#16 AWG wire, resulting in 3µH inductance with » 3mΩ Heat Sink Selection
of DC resistance.
Selection of the heat sink is based on the maximum
allowable junction temperature of the MOSFETS. Since
Assuming L=3µH and Fsw=200KHz (switching fre- we previously selected the maximum RDS(ON) at 1258C,
quency), the inductor ripple current and the output ripple then we must keep the junction below this temperature.
voltage is calculated using the following set of equations: Selecting TO-220 package gives θJC=1.88C/W (from the
venders’ data sheet) and assuming that the selected
T º Switching Period
heat sink is black anodized, the heat-sink-to-case ther-
D º Duty Cycle
mal resistance is: θcs=0.058C/W, the maximum heat
Vsw º High-side MOSFET ON Voltage
sink temperature is then calculated as:
RDS º MOSFET On-resistance
Ts = TJ - PD×(θJC + θcs)
Vsync º Synchronous MOSFET ON Voltage
∆Ir º Inductor Ripple Current
Ts = 125 - 3.82×(1.8 + 0.05) = 1188C
∆Vo º Output Ripple Voltage
With the maximum heat sink temperature calculated in
the previous step, the heat-sink-to-air thermal resistance
(θSA) is calculated as follows:
T = 1 / Fsw
Vsw = Vsync = Io×RDS
D » (Vo + Vsync) / (VIN - Vsw + Vsync)
TON = D×T
Assuming TA = 358C:
∆T = Ts - TA = 118 - 35 = 838C
Temperature Rise Above Ambient
TOFF = T - TON
∆Ir = (Vo + Vsync)×TOFF / L
∆Vo = ∆Ir×ESR
θSA = ∆T / PD = 83 / 3.82 = 228C/W
Rev. 1.6
07/16/02
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12
IRU3018
Next, a heat sink with lower θSA than the one calculated Note that since the MOSFETs RDS(ON) increases with
in the previous step must be selected. One way to do temperature, this number must be divided by » 1.5, in
this is to look at the graphs of the “Heat Sink Temp Rise order to find the RDS(ON) max at room temperature. The
Above the Ambient” vs. the “Power Dissipation” given in Motorola MTP3055VL has a maximum of 0.18Ω RDS(ON)
the heat sink manufacturers’ catalog and select a heat at room temperature, which meets our requirement.
sink that results in lower temperature rise than the one
calculated in previous step. The following heat sinks from To select the heat sink for the LDO MOSFET, first cal-
AAVID and Thermalloy meet this criteria.
culate the maximum power dissipation of the device
and then follow the same procedure as for the switcher.
Co. Part #
Thermalloy............................6078B
AAVID..................................577002
PD = (VIN - Vo)×IL
Where:
PD = Power Dissipation of the Linear Regulator
IL = Linear Regulator Load Current
Following the same procedure for the Schottky diode
results in a heat sink with θSA=258C/W. Although it is
possible to select a slightly smaller heat sink, for sim- For the 1.5V and 2A load:
plicity the same heat sink as the one for the high side
MOSFET is also selected for the synchronous MOSFET.
PD = (3.3 - 1.5)×2 = 3.6W
Assuming TJ(MAX) = 1258C:
Switcher Current Limit Protection
The IRU3018 uses the MOSFET RDS(ON) as the sensing
resistor to sense the MOSFET current and compares to
Ts = TJ - PD×(θJC + θcs)
Ts = 125 - 3.6×(1.8 + 0.05) = 1188C
a programmed voltage which is set externally via a re- With the maximum heat sink temperature calculated in
sistor (Rcs) placed between the drain of the MOSFET the previous step, the heat-sink-to-air thermal resistance
and the “OCSet1” terminal of the IC as shown in the (θSA) is calculated as follows:
application circuit. For example, if the desired current
limit point is set to be 22A, for the synchronous and 16A Assuming TA = 35°C:
for the non-synchronous, and from our previous selec-
tion, the maximum MOSFET RDS(ON)=19mΩ, then the
current sense resistor Rcs is calculated as:
DT = Ts - Ta = 118 - 35 = 83 °C
Temperature Rise Above Ambient
θSA = ∆T / PD = 83 / 3.6 = 238C/W
Vcs = ICL×RDS = 22×0.019 = 0.418V
Rcs = Vcs / IB = (0.418V) / (200µA) = 2.1KΩ
The same heat sink as the one selected for the switcher
MOSFETs is also suitable for the 1.5V regulator.
Where:
IB = 200µA is the internal current setting of the 2.5V, Clock Supply
IRU3018
The IRU3018 provides an internal ultra low dropout regu-
lator with a minimum of 200mA current capability that
converts 3.3V supply to a programmable regulated 2.5V
Switcher Frequency Selection
The IRU3018 frequency is internally set at 200KHz with supply to power the clock chip. The internal regulator
no external timing resistor. However, it can be adjusted has short circuit protection with internal thermal shut-
up by using an external resistor from Rt pin to Gnd or down.
can be adjusted down if the resistor is connected to the
12V supply.
1.5V and 2.5V Supply Resistor Divider Selection
Since the internal voltage reference for the linear regula-
1.5V, GTL+ Supply LDO Power MOSFET Selection tors is set at 1.26V for IRU3018, there is a need to use
The first step in selecting the power MOSFET for the external resistor dividers to step up the voltage. The re-
1.5V linear regulator is to select its maximum RDS(ON) of sistor dividers are selected using the following equations:
the pass transistor based on the input to output Dropout
voltage and the maximum load current.
Vo = (1 + Rt/RB)×VREF
Where:
Rt = Top resistor divider
RB = Bottom resistor divider
RDS(MAX) = (VIN - Vo) / IL
For Vo = 1.5V, VIN = 3.3V and, IL = 2A:
RDS(MAX) = (3.3 - 1.5) / 2 = 0.9Ω
VREF = 1.26V typical
Rev. 1.6
07/16/02
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13
IRU3018
For 1.5V supply
Assuming RB=100Ω:
cap thereby limiting the input current. For example, with
1µF of soft-start capacitor, the ramp up rate is approxi-
mated to be 1V/20ms. For example if the output capaci-
tance is 9000µF, the maximum start up current will be:
Rt = RB×[(Vo/VREF) - 1]
Rt = 100×[(1.5/1.26) - 1] = 19.1Ω
I = 9000µF×(1V/20ms) = 0.45A
For 2.5V supply
Assuming RB=200Ω:
The other function of the soft-start cap is to provide an
off time between the current limit cycles(HICCUP) in or-
der for the synchronous MOSFET to cool off and survive
the short circuit condition. The off time between the cur-
rent limit cycles is approximated as:
Rt = RB×[(Vo/VREF) - 1]
Rt = 200×[(2.5/1.26) - 1] = 197Ω
Select Rt=200Ω
THICCUP = 60×Css
For example if Css=1µF, THICCUP = 60×1 = 60ms
(ms)
Switcher Output Voltage Adjust
As it was discussed earlier, the trace resistance from
the output of the switching regulator to the Slot 1 can be Input Filter
used to the circuit advantage and possibly reduce the It is recommended to place an inductor between the
number of output capacitors, by level shifting the DC system 5V supply and the input capacitors of the switch-
regulation point when transitioning from light load to full ing regulator to isolate the 5V supply from the switching
load and vice versa. To account for the DC drop, the noise that occurs during the turn on and off of the switch-
output of the regulator is typically set about half the DC ing components. Typically an inductor in the range of 1
drop that results from light load to full load. For example, to 3µH will be sufficient in this type of application.
if the total resistance from the output capacitors to the
Slot 1 and back to the Gnd pin of the IRU3018 is 5mΩ External Shutdown
and if the total ∆I, the change from light load to full load The best way to shutdown the IRU3018 is to pull down
is 14A, then the output voltage measured at the top of on the soft-start pin using an external small signal tran-
the resistor divider which is also connected to the out- sistor such as 2N3904 or 2N7002 small signal MOSFET.
put capacitors in this case, must be set at half of the This allows slow ramp up of the output, the same as the
70mV or 35mV higher than the DAC voltage setting. To power up.
do this, the top resistor of the resistor divider (R17 in the
application circuit) is set at 100Ω, and the R19 is calcu- Layout Considerations
lated. For example, if DAC voltage setting is for 2.8V Switching regulators require careful attention to the lay-
and the desired output under light load is 2.835V, then out of the components, specifically power components
R19 is calculated using the following formula:
since they switch large currents. These switching com-
ponents can create large amount of voltage spikes and
high frequency harmonics if some of the critical compo-
nents are far away from each other and are connected
with inductive traces. The following is a guideline of how
to place the critical components and the connections
R19 = 100×[VDAC/(Vo - 1.004×VDAC)] (Ω)
R19 = 100×[2.8/(2.835 - 1.004×2.800)] = 11.76KΩ
Select 11.8KΩ, 1%
Note:The value of the top resistor must not exceed 100Ω. between them in order to minimize the above issues.
The bottom resistor can then be adjusted to raise the
output voltage.
Start the layout by first placing the power components:
Soft-Start Capacitor Selection
The soft-start capacitor must be selected such that dur-
ing the start-up when the output capacitors are charging
1) Place the input capacitor C14 and the high-side
MOSFET, Q3 as close to each other as possible.
up, the peak inductor current does not reach the current 2) Place the synchronous MOSFET, Q4 and the Q3 as
limit threshold. A minimum of 1µF capacitor insures this
for most applications. An internal resistor charges the
soft-start capacitor which slowly ramps up the inverting
input of the PWM comparator VFB3. This insures the
close to each other as possible with the intention
that the source of Q3 and drain of the Q4 has the
shortest length.
output voltage to ramp at the same rate as the soft-start 3) Place the snubber R15 & C13 between Q4 & Q3.
Rev. 1.6
07/16/02
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14
IRU3018
4) Place the output inductor, L3 and the output capaci- Component connections:
tors, C16 between the mosfet and the load with out-
put capacitors distributed along the slot 1 and close Note: It is extremely important that no data bus should
to it.
be passing through the switching regulator section spe-
cifically close to the fast transition nodes such as PWM
5) Place the bypass capacitors, C8 and C19 right next drives or the inductor voltage.
to 12V and 5V pins. C8 next to the 12V, pin 1 and
C19 next to the 5V, pin 8.
Using the 4 layer board, dedicate on layer to ground,
another layer as the power layer for the 5V, 3.3V, Vcore,
6) Place the IRU3018 such that the PWM output drives, 1.5V and if it is possible for the 2.5V.
pins 24 and 22 are relatively short distance from gates
of Q3 and Q4.
Connect all grounds to the ground plane using direct
vias to the ground plane.
7) Place all resistor dividers close to their respective
feedback pins.
Use large low inductance/low impedance plane to con-
nect the following connections either using component
8) Place the 2.5V output capacitor, C18 close to the pin side or the solder side.
13 of the IC and the 1.5V output capacitor, C17 close
to the Q2 MOSFET.
a) C14 to Q3 Drain
b) Q3 Source to Q4 Drain
c) Q4 Drain to L3
d) L3 to the output capacitors, C16
e) C16 to the load, slot 1
f) Input filter L1 to the C16 and C3
g) C1 to Q2 Drain
h) C17 to the Q2 Source
I) A minimum of 0.2 inch width trace from the C18
capacitor to pin 13
Note: It is better to place the 1.5V linear regulator
components close to the 3018 and then run a trace
from the output of the regulator to the load. However,
if this is not possible then the trace from the linear
drive output pin, pin 16 must be run away from any
high frequency data signals.
It is critical, to place high frequency ceramic capaci-
tors close to the clock chip and termination resistors
to provide local bypassing.
Connect the rest of the components using the shortest
connection possible.
9) Place R12 and C10 close to pin 20
10) Place C9 close to pin 9
Rev. 1.6
07/16/02
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15
IRU3018
IRU3018 APPLICATION PARTS LIST
Dual Layout with HIP6016
Ref Desig Description
Qty
Part #
Manuf
Q3,4
MOSFET
2
IRL3103
IRL3103S (Note 1)
IR
Q5
MOSFET, GP
1
1
1
1
6
2
1
1
2
1
2
2N7002
Motorola
Motorola
Micro Metal
Micro Metal
Sanyo
Q2
MOSFET
MTP3055VL, TO-263 package
L=1µH
L1
Inductor
L3
Inductor
Core: L=2µH, R=2mΩ
6MV1500GX, 1500µF, 6.3V,
6MV1500GX, 1500µF, 6.3V,
6MV1500GX, 1500µF, 6.3V,
220µF, 6.3V, ECAOJFQ221
680µF, 10V, EEUFA1A681L
680µF, 10V, EEUFA1A681L
0805Z105P250NT
C16
C14
C3
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Ceramic
Sanyo
Sanyo
C18
C17,C1
C2
Panasonic
Panasonic
Panasonic
Novacap
C8,19
1µF, 25V, Z5U, 0805 SMT
0805Z105P250NT
C9
Capacitor , Ceramic
1
Novacap
1µF, 25V, Z5U, 0805 SMT
See Table 2, Dual layout component
220pF, SMT 0805 size
470pF, SMT 0805 size
See Table 2, Dual layout component
C10
Capacitor, Ceramic
Capacitor, Ceramic
1
1
C13
C9,11,
12,15,20
R12
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Q1,3,4 Heatsink
1
2
1
1
1
1
1
1
1
1
2
2.21KΩ, 1%, SMT 0805 size
10Ω, 5%, SMT 1206 size
10Ω, 5%, SMT 1206 size
10KΩ, 5%, SMT 0805 size
100Ω, 1%, SMT 0805 size
200Ω, 1%, SMT 0805 size
19.1Ω, 1%, SMT 0805 size
200Ω, 1%, SMT 0805 size
100Ω, 1%, SMT 0805 size
10KΩ, 1%, SMT 0805 size
6270
R13,14
R15
R20
R6
R8
R5
R7
R17
R19
HS3,4
Thermalloy
R11,16,18, 21, 22
See Table 2, Dual layout component
Note 1: For the applications where it is desirable not to use the Heat sink, the IRL3103S MOSFET in the
TO-263 SMT package with 1" square of pad area using top and bottom layers of the board as a minimum
is required.
IR WORLD HEADQUARTERS : 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
Rev. 1.6
07/16/02
www.irf.com
16
IRU3018
(W) SOIC Package
24-Pin Surface Mount, Wide Body
H
A
B
C
R
E
DETAIL-A
L
PIN NO. 1
D
0.51±0.020 x 458
DETAIL-A
I
K
F
T
G
J
SYMBOL
24-PIN
MIN
MAX
A
B
C
D
E
F
G
I
15.20 15.40
1.27 BSC
0.66 REF
0.36
7.40
2.44
0.10
0.23
10.11
08
0.46
7.60
2.64
0.30
0.32
10.51
88
J
K
L
0.51
0.63
2.44
1.01
0.89
2.64
R
T
NOTE: ALL MEASUREMENTS ARE IN MILLIMETERS.
Rev. 1.6
07/16/02
www.irf.com
17
IRU3018
PACKAGE SHIPMENT METHOD
PKG
PACKAGE
PIN
PARTS
PARTS
T & R
DESIG
DESCRIPTION
COUNT
PER TUBE
PER REEL
Orientation
W
SOIC, Wide Body
24
31
1000
Fig A
1
1
1
Feed Direction
Figure A
IR WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
Data and specifications subject to change without notice. 02/01
Rev. 1.6
07/16/02
www.irf.com
18
相关型号:
IRU3021MCWTR
Switching Controller, Current/voltage-mode, 217kHz Switching Freq-Max, PDSO28, PLASTIC, SOIC-28
INFINEON
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