IRUH33P253B1M [INFINEON]
Ultra Low Dropout Positive Fixed Linear Regulator; 超低压差正，固定式线性稳压器
| 型号： | IRUH33P253B1M |
| 厂家： | 
Infineon |
| 描述： | Ultra Low Dropout Positive Fixed Linear Regulator |
| 文件： | 总8页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97041
Ultra Low Dropout
IRUH33P253B1M
Positive Fixed Linear Regulator
+3.3Vin to +2.5Vout at 3.0A
Product Summary
I
O
V
V
Part Number
Dropout
in
out
IRUH33P253B1M
0.4V
3.0A
3.3V
2.5V
MO-078AA
Features:
The IRUH33P253B1M is a space qualified, ultra low
dropout linear regulator designed specifically for space
applications. This product has been characterized to a total
ionizing dose of 1.0 Mrad (Si) per MIL-STD-883, Method
1019, Condition D at both high and low dose rates under
biased and unbiased conditions to account for ELDRS
effects in bipolar devices. The ultra low dropout voltage of
0.4V @ 3A makes the part particularly useful for applications
requiring low noise and higher efficiency.
n
Total dose to 1.0 Mrad (Si) and low dose
capability to 500 krad (Si) allows use in
space applications
n
Single Event latchup Immune
LET = 84 MeV/(mg/cm2)
Fluency = 1x109 ions/cm2
n
n
Low noise, higher efficiency
Ultra low dropout voltage of 0.4V@ 3A out
significantly reduces power consumption
Remote shutdown permits power
sequencing to be easily implemented
Hermetic MO-078AA (TO-258AA)
pack ensures higher reliability
Space Level Screened
n
n
n
n
This part is also available in 8-Lead Flat Pack
Package as IRUH33P253A1M
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
A
I
3.5
7
Output Current
O
V
in
Input Voltage
V
P
Power Dissipation T = 25°C
19
TOT
C
W
R
6.5
Thermal Resistance, Junction to Case
Operating Temperature Range
Storage Temperature Range
Lead Temperature
°C/W
THJC
T
J
-55 to +125
-65 to +150
300
T
S
°C
T
L
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1
11/14/05
IRUH33P253B1M
Electrical Characteristics @Ta = 25°C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ. Max. Units
V
V
V
V
= 3.3V, I = 1.5A
2.475
2.375
2.375
2.375
2.5
2.525
2.625
2.625
2.625
2.625
6.5
in
in
in
in
in
O
= 2.97V, I = 50mA
O
-
-
-
Output Voltage
= 2.97V, I = 3.0A
O
V
out
V
= 3.63V, I = 50mA
O
V
I
= 3.63V, I = 3.0A
O
= 3.0A
2.375
2.9
--
-
-
-
V
in
Input Voltage Range - Operating
Dropout Voltage
O
I
O
= 3.0A, V
= 2.5V
V
out
drop
0.4
V
= 3.3V, Overcurrent Latch Up
I
Current Limit
3.0
65
-
in
latch
-
-
A
F = 120Hz, I
= 50mA
Ripple Rejection
-
out
= 5.0V
dB
V
V
I
Shutdown Source Current
-
200
-
shdn
shdn
µ
A
= 3.3V
V
1.0
-0.1
-
-
1.6
+0.1
in
in
shdn
Shutdown Pin Threshold
V
V
out (shdn)
Output Voltage at Shutdown
V
= 3.3V, I = 50mA, Vshdn = +5.0V
O
Electrical Characteristics @Ta = -55°C to 125°C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ. Max. Units
V
V
V
V
= 3.3V, I = 1.5A
2.375
2.375
2.375
2.375
2.5
2.625
2.625
2.625
2.625
2.625
6.5
in
in
in
in
in
O
= 2.97V, I = 50mA
O
-
-
-
Output Voltage
= 2.97V, I = 3.0A
O
V
out
V
= 3.63V, I = 50mA
O
V
I
= 3.63V, I = 3.0A
O
= 3.0A
2.375
2.9
-
-
-
-
V
in
Input Voltage Range - Operating
Dropout Voltage
O
I
= 3.0A, V
= 2.5V
V
O
out
drop
0.4
V
= 3.3V, Overcurrent Latch Up
I
Current Limit
3.0
65
-
in
latch
-
-
A
F = 120Hz, I
out
= 50mA
Ripple Rejection
-
dB
V
V
= 5.0V
I
Shutdown Source Current
-
200
-
shdn
shdn
µ
A
= 3.3V
V
1.0
-0.1
-
-
1.6
+0.1
in
in
shdn
Shutdown Pin Threshold
V
V
out (shdn)
Output Voltage at Shutdown
V
= 3.3V, I = 50mA, Vshdn = +5.0V
O
Refer page 3 for Notes for Electrical Characteristic Tables
2
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IRUH33P253B1M
Electrical Characteristics @Ta = 25°C (Unless Otherwise Specified)
Post-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ. Max. Units
V
in
V
in
V
in
V
in
= 3.3V, I = 1.5A
2.375
2.375
2.375
2.375
-
-
-
-
2.625
2.625
2.625
2.625
O
= 2.97V, I = 50mA
O
Output Voltage
V
= 2.97V, I = 3.0A
O
V
out
= 3.63V, I = 50mA
O
V
V
= 3.63V, I = 3.0A
O
= 3.3V
2.375
3.0
-
-
2.625
in
in
I
Current Limit
max
-
-
A
dB
V
F = 120Hz, I
= 50mA
Ripple Rejection
40
-
-
out
V = 3.3V, I = 50mA, Vshdn = +5.0V
in
V
-0.1
+0.1
out (shdn)
Output Voltage at Shutdown
O
Notes for Electrical Characteristic Tables
VShutdown ramp from 0.8V to 4.8V, output monitored for a 100mV drop below the nominal specification for Vout
Pre-Radiation Characteristics
3A
120
100
80
60
40
20
0
1.5A
.75A
.50A
100
1,000
10,000
100,000
1,000,000
Frequency (Hz)
Fig 1. Ripple Rejection Vs Frequency
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3
IRUH33P253B1M
Post-Radiation Characteristics
Total Ionizing Dose (TID)
2.70
2.68
2.66
2.64
2.62
2.60
2.58
2.56
2.54
2.52
2.50
Hybrid Regulator
Unbiased @90 r/s
250C
Hybrid Regulator
Biased @ 90 r/s
250C
2.48
Test Data (Reg. Dr.)
no load @ 50 r/s, 250C
2.46
1
10
100
1000
Total Dose Level (krads)
Fig 2. Voltage Output Vs Total Ionizing Dose
Fig 3. Voltage Output Vs Total Ionizing Dose
4
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IRUH33P253B1M
Post-Radiation Characteristics
Enhanced Low Dose Rate Sensitivity (Dose Rate = 0.1 Rad/s)
Fig 4. Voltage Output Vs Total Ionizing Dose
Single Event Latch-up
Fig 5. Voltage Output Vs Time
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5
IRUH33P253B1M
Vout
Vin
Vout
Vin
IRUH33P253B1M
100uF 16V
Tantalum
SHDN
GND
1.0uFx10
Ceramic X 7R
1000uF 6.3V
Low ESR Tantalum
Ground
Fig 6. Typical Application Circuit
Input Capacitance
Recommended input capacitance for a generic application is a 100µF, 16V tantalum capacitor. However,
the input capacitance is not critical to the stability of the regulator and is therefore application dependent. In
designs with a clean bus voltage that is situated close to the input of the regulator, only a small ceramic
capacitor will be needed to decouple high frequency noise. On the other hand, in designs with a noisy bus,
a larger capacitor will be needed. Care should be taken to ensure that the input to the regulator is
sufficiently free of noise and disturbances.
Output Capacitance
Like most ultra low dropout voltage regulators, IRUH33P253B1M requires the use of an output capacitor
as part of the device frequency compensation. The device requires a minimum of 220µF tantalum to ensure
stability.
Many different types of capacitor are available and have widely varying characteristics. These capacitors
differ in capacitor tolerance, equivalent series resistance (ESR), equivalent series inductance and
capacitance temperature coefficient. The IRUH33P253B1M frequency compensation optimizes frequency
response with low ESR capacitors. In general, use capacitors with an ESR of less than 50 mΩ for heavy
load applications.
High quality bypass capacitors must also be used to limit the high frequency noise generated by the load.
Multiple small ceramic capacitors are typically required to limit parasitic inductance (ESL) and ESR in the
capacitors to acceptable levels.
The upper limit of the capacitance is governed by the delayed over-current latch function of the regulator.
The regulator has a protection circuit that will latch the device off in the event of a short circuit. However,
since it is known that the regulator will draw a large in-rush current upon startup, the latch-off is delayed
by about 10ms to allow the output capacitors to charge to a steady state without shutting down. During
this period, the regulator will have an output current at its maximum of around 5A typical. Therefore, the
maximum output capacitance can be as high as 20,000uF without causing device to latch-off during start-up.
Figure 6 shows a typical application circuit. The output load capacitor consists of one tantalum capacitor
(or more in parallel) of 1,000µF with ESR no high than 50 mΩ, and 10 x 1.0µF X7R ceramic caps. This
will give approximately 59 degrees phase and 24dB gain margin.
6
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IRUH33P253B1M
Vin
Vout
Drive
G nd
Shutdown
Ground
Fig 7. Simplified Schematic Circuit
Space Level Screening Requirements
TEST/INSPECTION
SCREENING LEVEL
SPACE
MIL-STD-883
METHOD
Pre Seal Burn-In
Nondestructive Bond Pull
Internal Visual
Temperature Cycle
Constant Acceleration
Mechanical Shock
PIND
Optional
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
1030
2023
2017
1010
2001
2002
2020
Pre Burn-In-Electrical
Burn-In
1015
Final Electrical
Seal
1014
2012
2009
Radiographic
External Visual
Note:
International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
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7
IRUH33P253B1M
Case Outline and Dimensions - MO-078AA
Pin Assignment
Pin # Pin Description
V
in
1
2
3
GND
V
out
4
5
SHUTDOWN
N/C
Notes:
1) All dimensions are in inches
Part Numbering Nomenclature
IR
U
H
33
P
25
3
B
1M
P
Screening
P = Unscreened, 25°C
Linear Regulator Module
U = Ultra Low Dropout Regulator
Electrical Test ( Not for Qual)
K = Space Level Screening
Radiation Hardening
H = RAD Hardened or Tolerant
RAD Level
1M = 1M Rads
Input Voltage
33 = 3.3V
Package Code
B = MO-078AA
Polarity
P = Positive
Maximum Output Current
3 = 3 Amp
Output Voltage
25 = 2.5V
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/05
8
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