ISC022N10NM6_技术文档

ISC022N10NM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

PG-TSON-8-3

8

7

5

6

Features

7

5

8

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

Pin 1

2

4

3

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀHighꢀavalancheꢀenergyꢀrating

4

2

1

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

Drain

Pin 5-8

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

*1

Gate

Pin 4

Source

Pin 1-3

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

*1: Internal body diode

Parameter

Value

100

2.24

230

135

73

Unit

V_DS

V

R_DS(on),max

I_D

mΩ

A

Q_oss

nC

Q_G(0V...10V)

Q_rrꢀ(100A/µs)

70

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISC022N10NM6

PG-TSON-8

022N1N6

-

Final Data Sheet

1

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet

2

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_A=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

-

230

163

147

25

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

Continuous drain current¹⁾

I_D

A

V_GS=8ꢀV,ꢀT_C=100ꢀ°C

V_GS=10ꢀV,T_A=25°C,ꢀR_thJA=50°C/W²⁾

Pulsed drain current³⁾

I_D,pulse

I_AS

-

920

50

A

T_A=25ꢀ°C

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

-

T_C=25ꢀ°C

E_AS

V_GS

-

1535 mJ

I_D=21ꢀA,ꢀR_GS=25ꢀΩ

-20

20

V

-

254

3.0

T_C=25ꢀ°C

Power dissipation

P_tot

W

°C

T_A=25ꢀ°C,ꢀR_thJA=50ꢀ°C/W²⁾

Operating and storage temperature

T_j,ꢀT_stg

-55

-

175

-

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case,

bottom

R_thJC

R_thJA

-

0.29

0.59

°C/W -

Thermal resistance, junction - case,

top

-

20

50

Thermal resistance, junction - ambient,

6 cm² cooling area

¹⁾Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See Diagram 3 for more detailed information

⁴⁾See Diagram 13 for more detailed information

Final Data Sheet

3

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Typ.

-

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

100

2.3

Max.

-

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

V

V_GS=0ꢀV,ꢀI_D=1ꢀmA

2.8

3.3

V_DS=V_GS,ꢀI_D=147ꢀµA

-

0.1

10

1.0

100

V_DS=80ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=25ꢀ°C

V_DS=80ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=125ꢀ°C¹⁾

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

I_DSS

µA

nA

I_GSS

-

10

100

V_GS=20ꢀV,ꢀV_DS=0ꢀV

-

1.8

2.2

2.24

2.7

V_GS=10ꢀV,ꢀI_D=50ꢀA

V_GS=8ꢀV,ꢀI_D=25ꢀA

R_DS(on)

mΩ

Gate resistance

R_G

g_fs

0.7

1.4

97

2.1

-

Ω

-

Transconductance

48.5

S

|V_DS|≥2|I_D|R_DS(on)max,ꢀI_D=50ꢀA

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance¹⁾

Reverse transfer capacitance¹⁾

C_iss

C_oss

C_rss

-

5400 6880 pF

1200 1500 pF

V_GS=0ꢀV,ꢀV_DS=50ꢀV,ꢀf=1ꢀMHz

19

13

28

-

pF

ns

V_DD=50ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=25ꢀA,

R_G,ext=1.6ꢀΩ

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

V_DD=50ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=25ꢀA,

R_G,ext=1.6ꢀΩ

6

-

ns

V_DD=50ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=25ꢀA,

R_G,ext=1.6ꢀΩ

Turn-off delay time

Fall time

30

7

V_DD=50ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=25ꢀA,

R_G,ext=1.6ꢀΩ

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics²⁾ꢀ

Values

Typ.

24

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

32

19

18

-

Gate to source charge¹⁾

Gate charge at threshold¹⁾

Gate to drain charge¹⁾

Switching charge

Q_gs

-

nC

V

V_DD=50ꢀV,ꢀI_D=25ꢀA,ꢀV_GS=0ꢀtoꢀ10ꢀV

V_DS=0.1ꢀV,ꢀV_GS=0ꢀtoꢀ10ꢀV

Q_g(th)

Q_gd

15.1

11.9

21

Q_sw

Gate charge total¹⁾

Q_g

73

91

-

Gate plateau voltage

Gate charge total, sync. FET

Output charge¹⁾

V_plateau

Q_g(sync)

Q_oss

4.4

67

-

nC

135

169

V_DS=50ꢀV,ꢀV_GS=0ꢀV

¹⁾Defined by design. Not subject to production test.

²⁾See ″Gate charge waveforms″ for parameter definition

Final Data Sheet

4

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode

Values

Typ.

-

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

212

920

1.0

Diode continuous forward current

Diode pulse current

I_S

-

A

T_C=25ꢀ°C

I_S,pulse

V_SD

t_rr

-

A

T_C=25ꢀ°C

Diode forward voltage

0.80

52

V

V_GS=0ꢀV,ꢀI_F=50ꢀA,ꢀT_j=25ꢀ°C

V_R=50ꢀV,ꢀI_F=25ꢀA,ꢀdi_F/dt=100ꢀA/µs

V_R=50ꢀV,ꢀI_F=25ꢀA,ꢀdi_F/dt=1000ꢀA/µs

Reverse recovery time¹⁾

Reverse recovery charge¹⁾

Reverse recovery time¹⁾

Reverse recovery charge¹⁾

78

ns

nC

ns

nC

Q_rr

t_rr

70

105

42

28

Q_rr

325

488

¹⁾Defined by design. Not subject to production test.

Final Data Sheet

5

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀDrainꢀcurrent

280

240

200

160

120

80

200

160

120

80

40

0

25

50

75

100

125

150

175

200

0

25

50

75

100

125

150

175

200

T_Cꢀ[°C]

P_tot=f(T_C)

I_D=f(T_C);ꢀV_GS≥10ꢀV

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10⁴

10¹

single pulse

0.01

0.02

0.05

0.1

0.2

10³

10²

10¹

10⁰

10^-1

10^-2

1 µs

10 µs

0.5

10⁰

10^-1

10^-2

100 µs

1 ms

10 ms

DC

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJC=f(t_p);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

6

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance

1000

6

10 V

7 V

6 V

5

4

3

2

1

0

800

8 V

600

400

200

0

7 V

6 V

10 V

5 V

4.5 V

0

1

2

3

4

5

0

100

200

300

400

500

V_DSꢀ[V]

I_Dꢀ[A]

I_D=f(V_DS),ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(I_D),ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance

500

6

5

400

300

200

175 °C

4

3

2

1

0

25 °C

100

175 °C

25 °C

0

1

2

3

4

5

6

7

5

6

7

8

9

10

V_GSꢀ[V]

I_D=f(V_GS),ꢀ|V_DS|>2|I_D|R_DS(on)max;ꢀparameter:ꢀT_j

R_DS(on)=f(V_GS),ꢀI_D=50ꢀA;ꢀparameter:ꢀT_j

Final Data Sheet

7

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance

Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage

2.4

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

2.0

1.6

1.2

0.8

0.4

0.0

1470 µA

147 µA

-80

-40

0

40

80

120

160

200

-80

-40

0

40

80

120

160

200

T_jꢀ[°C]

R_DS(on)=f(T_j),ꢀI_D=50ꢀA,ꢀV_GS=10ꢀV

V_GS(th=f(T_j),ꢀV_GS=V_DS;ꢀparameter:ꢀI_D

Diagramꢀ11:ꢀTyp.ꢀcapacitances

Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

10⁴

10³

25 °C

25 °C, max

175 °C

Ciss

175 °C, max

10³

10²

10¹

10⁰

Coss

10²

10¹

10⁰

Crss

0

20

40

60

80

100

0.00

0.25

0.50

0.75

1.00

1.25

1.50

V_DSꢀ[V]

V_SDꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=1ꢀMHz

I_F=f(V_SD);ꢀparameter:ꢀT_j

Final Data Sheet

8

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

Diagramꢀ13:ꢀAvalancheꢀcharacteristics

Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge

10²

10

20 V

50 V

80 V

8

6

4

2

0

25 °C

10¹

100 °C

150 °C

10⁰

10¹

10²

10³

0

10

20

30

40

50

60

70

80

t_AVꢀ[µs]

Q_gateꢀ[nC]

I_AS=f(t_AV);ꢀR_GS=25ꢀΩ;ꢀparameter:ꢀT_j,start

V_GS=f(Q_gate),ꢀI_D=25ꢀAꢀpulsed,ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_DD

Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagram Gate charge waveforms

112

110

108

106

104

102

100

98

96

94

-80

-40

0

40

80

120

160

200

T_jꢀ[°C]

V_BR(DSS)=f(T_j);ꢀI_D=10ꢀmA

Final Data Sheet

9

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

5ꢀꢀꢀꢀꢀPackageꢀOutlines

DOCUMENT NO.

Z8B00187559

MILLIMETERS

DIMENSION

REVISION

MIN.

MAX.

1.10

0.54

0.05

01

A

b

-

0.34

-

SCALE 10:1

b1

c

0.20

0

1

2mm

D

4.90

4.25

5.90

4.00

3.14

0.20

5.10

4.45

6.10

4.20

3.34

0.40

D1

E

EUROPEAN PROJECTION

E1

E2

E3

e

1.27

(0.37)

K2

L

0.60

0.43

0.80

0.63

ISSUE DATE

14.12.2017

L1

L2

(0.25)

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSON-8,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

10

Rev.ꢀ2.1,ꢀꢀ2023-02-14

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ100ꢀV

ISC022N10NM6

RevisionꢀHistory

ISC022N10NM6

Revision:ꢀ2023-02-14,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.0

2.1

2021-07-05

2023-02-14

Release of final version

Update SOA Diagram

Trademarks

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TechnologiesꢀOfficeꢀ(www.infineon.com).

Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

11

Rev.ꢀ2.1,ꢀꢀ2023-02-14


型号：	ISC022N10NM6
厂家：	Infineon
描述：	正常电平 ISC022N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
文件：	总11页 (文件大小：1120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISC022N10NM6 [INFINEON]

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