ISC240P06LM [INFINEON]
OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.;型号: | ISC240P06LM |
厂家: | Infineon |
描述: | OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. |
文件: | 总11页 (文件大小:1244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ISC240P06LM
MOSFET
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=-4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀLogicꢀLevel
•ꢀEnhancementꢀmode
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 5-8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1
Gate
Pin 4
Parameter
Value
Unit
Source
Pin 1-3
VDS
-60
V
*1: Internal body diode
RDS(on),max
ID
24
mΩ
A
-59
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
240P06LM
RelatedꢀLinks
ISC240P06LM
PG-TDSON-8
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-59
-41
-51
-36
VGS=-10ꢀV,ꢀTC=25ꢀ°C
VGS=-10ꢀV,ꢀTC=100ꢀ°C
VGS=-4.5ꢀV,ꢀTC=25ꢀ°C
VGS=-4.5ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
-236
770
20
A
TA=25ꢀ°C
-
mJ
V
ID=-46ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
188
W
TA=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJA
-
-
-
0.8
°C/W -
°C/W -
Device on PCB,
-
50
6 cm² cooling area4)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
-1
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
-1.5
-2
VDS=VGS,ꢀID=-2340ꢀµA
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
-10
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
-
-
20
24
24
32
VGS=-10ꢀV,ꢀID=-40ꢀA
VGS=-4.5ꢀV,ꢀID=-32ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
-
5
-
-
Ω
-
Transconductance
62
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-40ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
3400 4400 pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
480
110
620
190
pF
pF
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-40ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
5
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-40ꢀA,
RG,ext=1.6ꢀΩ
3
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-40ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
109
49
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-40ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
-12
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Output charge1)
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV
VDD=-30ꢀV,ꢀID=-40ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-5
-
-30
-45
-
Qsw
Qg
-37
-51
-64
-
Vplateau
Qg
-3.5
-102
-36
-136
-48
nC
nC
Qoss
1) Defined by design. Not subject to production test
2) See diagram ,Gate charge waverforms, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-59
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-236
A
TC=25ꢀ°C
Diode forward voltage
-0.86 -1.2
V
VGS=0ꢀV,ꢀIF=-40ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-40ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-40ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
75
150
ns
nC
Qrr
-164
-328
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
60
175
150
125
100
75
50
40
30
20
10
0
50
25
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
101
100
100
100 µs
0.5
0.2
1 ms
10-1
0.1
0.05
0.02
10 ms
DC
10-2
0.01
single pulse
10-1
100
10-3
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
140
60
-10 V
-5 V
120
100
80
60
40
20
0
-4.5 V
50
40
30
20
10
0
-2.8 V
-3 V
-3.5 V
-4 V
-4 V
-4.5 V
-5 V
-10 V
-3.5 V
-3 V
-2.8 V
0
1
2
3
4
5
0
20
40
60
80
100
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
140
70
120
100
80
60
40
20
0
60
50
25 °C
175 °C
40
175 °C
30
20
25 °C
10
0
0
1
2
3
4
5
4
6
8
10
12
14
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-40ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.0
2.0
1.6
1.2
0.8
0.4
0.0
1.6
-23400 µA
1.2
-2340 µA
0.8
0.4
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-40ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
-12 V
-30 V
-48 V
8
6
4
2
0
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
20
40
60
80
100
120
tAVꢀ[µs]
-Qgateꢀ[nC]
IAV=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-40ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
69
67
65
63
61
59
57
55
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
08
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.00
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.22
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
05.11.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-10-10
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
ISC240P06LM
RevisionꢀHistory
ISC240P06LM
Revision:ꢀ2022-10-10,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-10-10
Trademarks
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Publishedꢀby
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Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-10-10
相关型号:
ISC3249AS1
FOR SMALL TYPE COLOR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE
ISAHAYA
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