首页 |元器件品牌

ISC800P06LM [INFINEON]

OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.;
ISC800P06LM
型号： ISC800P06LM
厂家： Infineon    Infineon
描述：

OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
文件： 总11页 (文件大小：1218K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
ISC800P06LM  
MOSFET  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
SuperSO8  
5
8
6
7
7
Features  
6
5
8
•ꢀP-Channel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀLogicꢀLevel  
•ꢀEnhancementꢀmode  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
4
3
1
2
2
3
1
4
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Pin 5-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
*1  
Gate  
Pin 4  
Parameter  
Value  
Unit  
Source  
Pin 1-3  
VDS  
-60  
V
*1: Internal body diode  
RDS(on),max  
ID  
80  
mΩ  
A
-19.6  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
800P06LM  
RelatedꢀLinks  
ISC800P06LM  
PG-TDSON-8  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
-19.6  
-15.2  
-19.3  
-13.6  
VGS=-10ꢀV,ꢀTC=25ꢀ°C  
VGS=-10ꢀV,ꢀTC=100ꢀ°C  
VGS=-4.5ꢀV,ꢀTC=25ꢀ°C  
VGS=-4.5ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
Pulsed drain current2)  
Avalanche energy, single pulse3)  
Gate source voltage  
ID,pulse  
EAS  
-
-
-
-
-
-78.4  
221  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=-16ꢀA,ꢀRGS=25ꢀΩ  
VGS  
Ptot  
-20  
-
-
Power dissipation  
83  
W
TC=25ꢀ°C  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJA  
-
-
-
2.4  
°C/W -  
°C/W -  
Device on PCB,  
-
50  
6 cm² cooling area4)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
-60  
-1  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA  
VDS=VGS,ꢀID=-724ꢀµA  
-1.5  
-2  
-
-
-0.1  
-10  
-1  
-100  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
-10  
-100  
VGS=-20ꢀV,ꢀVDS=0ꢀV  
-
-
67  
79  
80  
100  
VGS=-10ꢀV,ꢀID=-16ꢀA  
VGS=-4.5ꢀV,ꢀID=-12.8ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
-
5
-
-
Ω
-
Transconductance  
22  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-16ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
1086 1400 pF  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
154  
36  
210  
65  
pF  
pF  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-16ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
3.9  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-16ꢀA,  
RG,ext=1.6ꢀΩ  
1.8  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-16ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
35.8  
13.5  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-16ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
-3.8  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Gate charge total1)  
Output charge1)  
Qgs  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-4.5ꢀV  
VDD=-30ꢀV,ꢀID=-16ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
-1.6  
-9.5  
-14.3 nC  
- nC  
Qsw  
Qg  
-11.7  
-16.0 -20.0 nC  
-3.6  
Vplateau  
Qg  
-
V
-11.2 -14.8 nC  
-11.4 -15.2 nC  
Qoss  
1) Defined by design. Not subject to production test  
2) See diagram ,Gate charge waverforms, for gate charge parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-19.6  
-78.4  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
A
TC=25ꢀ°C  
Diode forward voltage  
-0.87 -1.2  
V
VGS=0ꢀV,ꢀIF=-16ꢀA,ꢀTj=25ꢀ°C  
VR=-30ꢀV,ꢀIF=-16ꢀA,ꢀdiF/dt=-100ꢀA/µs  
VR=-30ꢀV,ꢀIF=-16ꢀA,ꢀdiF/dt=-100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
48.5  
-93  
97  
ns  
nC  
Qrr  
-186  
1) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
100  
20  
80  
60  
40  
20  
0
16  
12  
8
4
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀ|VGS|≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
10 µs  
100 µs  
1 ms  
0.5  
101  
100  
0.2  
10 ms  
0.1  
DC  
0.05  
100  
10-1  
0.02  
0.01  
single pulse  
10-1  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
-VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
50  
200  
175  
-10 V  
40  
30  
20  
10  
0
-5 V  
-4.5 V  
-2.8 V  
150  
-3 V  
-3.5 V  
-4 V  
125  
100  
75  
50  
25  
0
-4 V  
-4.5 V  
-5 V  
-10 V  
-3.5 V  
-3 V  
-2.8 V  
0
1
2
3
4
5
0
5
10  
15  
20  
25  
30  
35  
40  
-VDSꢀ[V]  
-IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
50  
200  
175  
150  
40  
30  
20  
10  
0
25 °C  
175 °C  
125  
100  
75  
50  
25  
0
175 °C  
25 °C  
0
2
4
6
8
10  
12  
14  
4
6
8
10  
12  
14  
16  
-VGSꢀ[V]  
-VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=-16ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
2.0  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
-7240 µA  
1.6  
1.2  
0.8  
0.4  
0.0  
-724 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=-16ꢀA,ꢀVGS=-10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
102  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
103  
102  
101  
101  
Ciss  
100  
Coss  
Crss  
10-1  
0
10  
20  
30  
40  
50  
60  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
-VDSꢀ[V]  
-VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
-12 V  
-30 V  
-48 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
100  
101  
102  
103  
0
5
10  
15  
20  
25  
30  
35  
tAVꢀ[µs]  
-Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=-16ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
69  
67  
65  
63  
61  
59  
57  
55  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00003332  
REVISION  
08  
MILLIMETERS  
DIMENSION  
MIN.  
0.90  
0.15  
0.34  
4.80  
3.90  
0.00  
5.70  
5.90  
3.88  
MAX.  
1.20  
0.35  
0.54  
5.35  
4.40  
0.22  
6.10  
6.42  
4.31  
SCALE 10:1  
A
A1  
b
3mm  
0
1
2
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
L
0.45  
0.45  
0.71  
0.69  
ISSUE DATE  
05.11.2019  
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2022-10-13  
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV  
ISC800P06LM  
RevisionꢀHistory  
ISC800P06LM  
Revision:ꢀ2022-10-13,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2022-10-13  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2022-10-13  

相关型号：

ISCA1

 6.0mm x 3.5 mm 2 Pads Ceramic Package
MMD

ISCA1-11.000MHZ

 Series - Fundamental Quartz Crystal, 11MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD

ISCA1-11.999MHZ

 Series - Fundamental Quartz Crystal, 11.999MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD

ISCA1-11.999MHZ-T

 Series - Fundamental Quartz Crystal, 11.999MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD

ISCA1-15.999MHZ

 Series - Fundamental Quartz Crystal, 15.999MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD

ISCA1-15.999MHZ-T

 Series - Fundamental Quartz Crystal, 15.999MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD

ISCA3

 6.0mm x 3.5 mm 2 Pads Ceramic Package
MMD

ISCB1

 6.0mm x 3.5 mm 2 Pads Ceramic Package
MMD

ISCB3

 6.0mm x 3.5 mm 2 Pads Ceramic Package
MMD

ISCC1896

 isc Triacs
ISC

ISCC1896_V01

 isc Triacs
ISC

ISCD1-12.000MHZ-T

 Series - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, CERAMIC PACKAGE-2
MMD
©2020 ICPDF网 联系我们和版权申明