ISP26DP06NMS [INFINEON]
OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.;型号: | ISP26DP06NMS |
厂家: | Infineon |
描述: | OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level. |
文件: | 总11页 (文件大小:638K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ISP26DP06NMS
MOSFET
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
PG-SOT223-3
Features
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀNormalꢀLevel
•ꢀEnhancementꢀmode
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 2
Gate
Pin 1
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Source
Pin 3
VDS
-60
V
RDS(on),max
ID
260
mΩ
A
-1.9
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISP26DP06NMS
PG-SOT223-3
26DP06NS
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=-10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=70ꢀ°C/W
Continuous drain current1)
Continuous drain current1)
ID
ID
-
-
-
-1.9
A
VGS=-10ꢀV,ꢀTA=100ꢀ°C,
RTHJA=70ꢀ°C/W
-
-1.2
A
Pulsed drain current2)
Avalanche energy, single pulse3)
ID,pulse
EAS
-
-
-
-
-7.6
257
20
A
TA=25ꢀ°C
-
mJ
V
ID=-1.9ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
5.0
1.8
TS=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=70ꢀ°C/W1)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - soldering
point
RthJS
RthJA
-
-
-
25
°C/W -
°C/W -
Device on PCB,
-
70
6 cm² cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA
VDS=VGS,ꢀID=-270ꢀµA
-2.1
-3
-4
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
-
-
-
-10
189
5
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
260
mΩ VGS=-10ꢀV,ꢀID=-1.9ꢀA
-
-
Ω
-
Transconductance
gfs
3.1
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-1.9ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
420
62
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
18
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
5
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,
RG,ext=1.6ꢀΩ
7
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
15
5
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
-1.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-1.2
-3.8
Qsw
-4.5
Gate charge total
Qg
-10.8
-4.6
Gate plateau voltage
Output charge
Vplateau
Qoss
-5
nC
1) See diagram ,Gate charge waveforms, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-1.5
-6
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TA=25ꢀ°C
IS,pulse
VSD
trr
A
TA=25ꢀ°C
Diode forward voltage
-0.81 -1.2
V
VGS=0ꢀV,ꢀIF=-1.5ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
30
-
-
ns
nC
Qrr
-58
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
2.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TA[°C]
TA[°C]
Ptot=f(TA)
ID=f(TA);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
101
102
1 µs
100 µs
1 ms
10 ms
0.5
100
10-1
10-2
10-3
10-4
0.2
101
0.1
100 ms
0.05
DC
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
16
400
-5 V
-4.5 V
-10 V
-8 V
14
-7 V
12
300
200
100
0
10
-6 V
-6 V
-7 V
-8 V
-10 V
8
6
4
-5 V
2
-4.5 V
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
8
600
7
6
5
4
3
2
500
400
150 °C
300
200
25 °C
150 °C
100
0
1
25 °C
0
0
1
2
3
4
5
6
7
5
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-1.9ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.6
1.6
1.2
0.8
0.4
0.0
3.2
2.8
2.4
2.0
-2700 µA
-270 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-1.9ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
101
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
100
10-1
10-2
102
Coss
Crss
101
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
101
10
-12 V
-30 V
-48 V
8
6
4
2
0
100
25 °C
100 °C
10-1
125 °C
101
102
103
104
0
2
4
6
8
10
12
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-1.9ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
68
66
64
62
60
58
56
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00180553
0
SCALE
MILLIMETERS
MAX
INCHES
DIM
MIN
1.52
-
MIN
0.060
-
MAX
2.5
A
A1
A2
b
1.80
0.10
1.70
0.80
3.10
0.32
6.70
7.30
3.70
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0
2.5
1,50
0.059
0.024
0.116
0.009
0.248
0.264
0.130
5mm
0.60
2.95
0.24
6.30
6.70
3.30
b2
c
EUROPEAN PROJECTION
D
E
E1
e
2.3 BASIC
4.6 BASIC
0.091 BASIC
0.181 BASIC
e1
L
ISSUE DATE
24-02-2016
0.75
1.10
0.030
0.043
N
3
3
REVISION
O
ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP26DP06NMS
RevisionꢀHistory
ISP26DP06NMS
Revision:ꢀ2019-03-25,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-03-25
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-03-25
相关型号:
ISP321-1-88XSM-SM
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-4
ISOCOM
ISP321-1-88XSMSM
Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-4
ISOCOM
ISP321-1-SM
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4
ISOCOM
ISP321-1BL-SM
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, SURFACE MOUNT, DIP-4
ISOCOM
ISP321-1BLSM
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-4
ISOCOM
©2020 ICPDF网 联系我们和版权申明