ISZ330N12LM6 [INFINEON]
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
| 型号： | ISZ330N12LM6 |
| 厂家： | 
Infineon |
| 描述： | This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. |
| 文件： | 总11页 (文件大小：1358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISZ330N12LM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
S3O8
8
5
Features
6
7
6
7
5
8
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀHighꢀavalancheꢀenergyꢀrating
1
4
2
3
3
2
4
1
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
*1
Gate
Pin 4
Source
Pin 1-3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1: Internal body diode
Parameter
Value
120
33
Unit
VDS
V
RDS(on),max
ID
mΩ
A
24
Qoss
13
nC
nC
nC
QG (0V...4.5V)
Qrrꢀ(1000A/µs)
3.6
45
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISZ330N12LM6
PG-TSDSON-8
33012L6
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
24
17
14.5
5.7
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10V,TA=25°C,RthJA=60°C/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
96
9
A
TA=25ꢀ°C
TC=25ꢀ°C
ID=3ꢀA,ꢀRGS=25ꢀΩ
-
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
A
EAS
VGS
-
54
20
mJ
V
-20
-
-
-
-
43
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=60ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
3.5
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
60
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
1.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=11ꢀµA
1.7
2.2
-
-
0.1
10
1.0
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
µA
nA
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
-
27.8
36.3
52.8
33.0
44.6
-
VGS=10ꢀV,ꢀID=9ꢀA
mΩ VGS=4.5ꢀV,ꢀID=4.5ꢀA
VGS=3.3ꢀV,ꢀID=1.4ꢀA
Drain-source on-state resistance
RDS(on)
Gate resistance1)
Transconductance
RG
gfs
0.5
9.5
1.0
18
1.5
-
Ω
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=9ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
500
120
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
650
160
9.3
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=4.5ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
3
-
-
-
-
ns
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=4.5ꢀA,
RG,ext=1.6ꢀΩ
1.4
7
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=4.5ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=4.5ꢀA,
RG,ext=1.6ꢀΩ
7.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
1.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
1.8
1.1
1.9
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Output charge1)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=4.5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=60ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
0.8
1.2
Qsw
Qg
1.8
3.6
4.5
-
Vplateau
Qg
2.8
6.8
9
nC
nC
Qoss
13
17.2
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
24
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
96
A
TC=25ꢀ°C
Diode forward voltage
0.87
21
1.0
42
V
VGS=0ꢀV,ꢀIF=9ꢀA,ꢀTj=25ꢀ°C
VR=60ꢀV,ꢀIF=4.5ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=4.5ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=4.5ꢀA,ꢀdiF/dt=1000ꢀA/µs
VR=60ꢀV,ꢀIF=4.5ꢀA,ꢀdiF/dt=1000ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
ns
nC
Qrr
trr
28
56
11
22
Qrr
45
90
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
50
25
40
30
20
10
0
20
15
10
5
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
102
single pulse
0.01
0.02
1 µs
0.05
0.1
10 µs
0.2
0.5
101
101
10 ms
100 µs
100
10-1
10-2
100
10-1
10-2
1 ms
DC
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
80
100
10 V
2.8 V
70
60
50
40
30
20
10
0
5 V
80
3 V
3.3 V
4 V
4.5 V
4.5 V
60
40
20
0
5 V
4 V
10 V
3.3 V
3 V
2.8 V
0
1
2
3
4
5
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
40
100
90
80
70
25 °C
30
20
10
0
175 °C
60
175 °C
50
40
100 °C
30
25 °C
20
-55 °C
10
0
0
1
2
3
4
5
2
4
6
8
10
12
14
16
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=9ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
110 µA
1.2
0.8
0.4
0.0
11 µA
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=9ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
102
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
102
101
100
101
Coss
100
Crss
10-1
0
20
40
60
80
100
120
0.0
0.4
0.8
1.2
1.6
2.0
2.4
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
101
10
24 V
60 V
96 V
8
6
4
2
0
25 °C
100
100 °C
150 °C
10-1
10-1
100
101
102
103
0
1
2
3
4
5
6
7
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=4.5ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
132
130
128
126
124
122
120
118
116
114
112
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TSDSON-8-U03
REVISION: 03
DATE: 20.10.2020
MILLIMETERS
DIMENSIONS
MIN.
MAX.
1.10
0.44
A
b
0.90
0.24
c
(0.20)
D
3.20
2.19
1.54
3.20
2.01
0.10
3.40
2.39
1.74
3.40
2.21
0.30
D1
D2
E
E1
E2
e
0.65
0.06
L
0.30
0.40
0.50
0.50
0.60
0.70
L1
L2
aaa
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ330N12LM6
RevisionꢀHistory
ISZ330N12LM6
Revision:ꢀ2022-12-13,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-12-13
Trademarks
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-12-13
相关型号：
ISZ56DP15LM
OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
ISZ810P06LM
OptiMOS™ P-channel MOSFETs 60 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
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