ITS716G [INFINEON]
Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 140mз; 智能高侧电源开关工业用四通道： 4× 140mз
| 型号： | ITS716G |
| 厂家： | 
Infineon |
| 描述： | Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 140mз |
| 文件： | 总14页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET ITS 716G
Smart High-Side Power Switch
For Industrial Applications
Four Channels: 4 x 140mΩ
Status Feedback
Product Summary
Package
PG-DSO-20
Operating Voltage
Vbb
5.5 ...40V
Operating Temperature
Ta
-30 …+85°C
Active channels one
four parallel
On-state Resistance
Nominal load current
Current limitation
RON
IL(NOM)
IL(SCr)
140mΩ
35mΩ
2.6A
5.3A
6.5A
6.5A
General Description
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
•
Applications
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial
applications
•
•
•
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Block Diagram
•
•
•
•
•
Short circuit protection
Overload protection
Vbb
Current limitation
Thermal shutdown
IN1
ST1/2
IN2
Logic
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Channel 1
Channel 2
Load 1
•
•
•
Load 2
IN3
ST3/4
IN4
Logic
Channel 3
Channel 4
Load 3
Diagnostic Function
•
•
•
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
GND
Load 4
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PROFET ITS 716G
Functional diagram
current limit
overvoltage
gate
control
+
VBB
protection
charge
pump
internal
clamp for
logic
inductive load
OUT1
LOAD
IN1
temperature
sensor
reverse
battery
ESD
protection
Open load
detection
.
channel 1
ST1/2
IN2
control and protection circuit
of
channel 2
GND1/2
IN3
OUT2
OUT3
OUT4
control and protection circuit
of
channel 3
ST3/4
IN4
control and protection circuit
of
channel 4
GND3/4
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PROFET ITS 716G
Pin Definitions and Functions
Pin configuration
Pin
Symbol Function
(top view)
1,10,
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
11,12,
V
1 •
2
20 V
19 V
bb
bb
bb
15,16,
GND1/2
IN1
19,20
3
3
18 OUT1
17 OUT2
IN1
Input 1,2,3,4 activates channel 1,2,3,4 in case
of logic high signal
ST1/2
IN2
4
5
IN2
5
16 V
15 V
bb
bb
7
IN3
IN4
GND3/4
IN3
6
9
7
14 OUT3
13 OUT4
18
17
14
13
4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Output 1,2,3,4 protected high-side power output
of channel 1,2,3,4. Design the wiring for the
max. short circuit current
ST3/4
IN4
8
9
12 V
bb
V
10
11 V
bb
bb
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
open drain, low on failure
8
2
Ground of chip 1 (channel 1,2)
Ground of chip 2 (channel 3,4)
6
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Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Vbb
Vbb
43
36
V
V
Tj,start =-40 ...+150°C
Load current (Short-circuit current, see page 6)
IL
self-limited
60
A
V
3)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump
RI2) = 2 Ω, td = 400 ms; IN= low or high,
each channel loaded with RL = 13.5 Ω,
Junction temperature
Tj
Ta
Tstg
+150
-30 ...+85
-40 ...+105
°C
W
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
Ta = 25°C: Ptot
Ta = 85°C:
3.6
1.9
(all channels active)
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C4), see diagrams on page 10
21
25
30
1.0
4.0
8.0
mH
kV
I = 2.3 A, EAS = 76 mJ, 0Ω
IL = 3.3 A, EAS = 182 mJ, 0Ω
IL = 4.7 A, EAS = 460 mJ, 0Ω
one channel: ZL
two parallel channels:
four parallel channels:
ElLectrostatic discharge capability (ESD)
(Human Body Model)
IN:
VESD
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
VIN
IIN
-10 ... +16
±0.3
V
mA
Pulsed current through input pin5)
Current through status pin (DC)
IIN
±5.0
±5.0
IST
1)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
3)
4)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 14
bb
5)
only for testing
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PROFET ITS 716G
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
junction - soldering point6)7)
each channel: Rthjs
Rthja
K/W
--
--
--
--
--
--
44
35
17
--
--
--
junction – ambient6)
@ 6 cm2 cooling area
one channel active:
all channels active:
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (V to OUT); I = 2 A
L
bb
each channel,
--
--
mΩ
Tj = 25°C: RON
110
210
140
280
Tj = 150°C:
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
--
55
70
--
28
35
see diagram, page 11
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
four parallel channels active:
2.3
3.3
4.7
2.6
3.7
5.3
--
--
--
A
6)
Device on PCB , T = 85°C, T ≤ 150°C
a
j
Output current while GND disconnected or pulled up8);
IL(GNDhigh)
--
--
2
mA
V
bb
= 32 V, V = 0,
IN
see diagram page 9
Turn-on time9)
Turn-off time
RL = 12 Ω
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
--
--
100
100
250
270
µs
Slew rate on9)
Slew rate off9)
10 to 30% VOUT, RL = 12 Ω: dV/dton
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff
0.2
0.2
--
--
1.0 V/µs
1.1 V/µs
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 14
Soldering point: upper side of solder edge of device pin 15. See page 14
not subject to production test, specified by design
6)
bb
7)
8)
9)
See timing diagram on page 12.
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PROFET ITS 716G
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Operating Parameters
Operating voltage
Vbb(on)
5.5
--
--
--
40
V
V
Undervoltage switch off10)
Tj =-40...25°C: Vbb(u so)
Tj =125°C:
4.5
--
-- 4.511)
Overvoltage protection12)
Vbb(AZ)
41
47
52
V
I
bb = 40 mA
Standby current13)
Tj =-40°C...25°C: Ibb(off)
Tj =150°C:
--
--
--
--
9
16
24
µA
VIN = 0; see diagram page 11
--
Tj =125°C:
-- 1611)
Off-State output current (included in Ibb(off)
)
IL(off)
1
5
µA
VIN = 0; each channel
Operating current 14), VIN = 5V,
IGND
--
--
0.5
1.9
0.9
3.3
mA
I
GND = IGND1 + IGND2
,
one channel on:
all channels on:
Protection Functions15)
Current limit, V
= 0V, (see timing diagrams, page 12)
out
Tj =-40°C: IL(lim)
--
--
5
--
9
14
--
A
A
Tj =25°C:
Tj =+150°C:
--
--
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
--
--
6.5
6.5
--
--
two,three or four parallel channels
(see timing diagrams, page 12)
Initial short circuit shutdown time
T
j,start =25°C: toff(SC)
--
2
--
ms
V
V
= 0V
(see timing diagrams on page 12)
out
Output clamp (inductive load switch off)16)
VON(CL)
41
47
52
at V
ON(CL)
= V - V , I = 40 mA
bb OUT L
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
150
--
--
10
--
--
°C
K
10)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
11)
12)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also V
in table of protection functions and
ON(CL)
circuit diagram on page 9.
13)
14)
15)
Measured with load; for the whole device; all channels off
Add I , if I > 0
ST
ST
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
16)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
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Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
32
Reverse Battery
Reverse battery voltage 17)
-Vbb
--
--
--
600
V
Drain-source diode voltage (V > V
)
-VON
-- mV
out
bb
IL =-2.0A, Tj =+150°C
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)
1.7
2.5
2.8
4.0
4.0
V
1
Input and Status Feedback18)
Input resistance
RI
6.0
kΩ
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
VIN(T+)
VIN(T-)
∆ VIN(T)
td(STon)
--
1.0
--
--
--
0.2
10
2.5
--
--
V
V
V
Status change after positive input slope19)
with open load
--
20
µs
Status change after positive input slope19)
with overload
td(STon)
td(SToff)
td(SToff)
30
--
--
--
--
--
500
20
µs
µs
µs
Status change after negative input slope
with open load
Status change after negative input slope19)
with overtemperature
--
Off state input current
On state input current
Status output (open drain)
Zener limit voltage
VIN = 0.4 V: IIN(off)
VIN = 5 V: IIN(on)
5
10
--
35
20
60
µA
µA
IST = +1.6 mA: VST(high)
IST = +1.6 mA: VST(low)
5.4
--
--
--
--
0.6
V
ST low voltage
17)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18)
19)
If ground resistors R
are used, add the voltage drop across these resistors.
GND
not subject to production test, specified by design
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Truth Table
IN1
IN3
IN2
IN4
OUT1
OUT3
OUT2
OUT4
ST1/2
ST3/4
Channel 1 and 2
Chip 1
Chip 2
Channel 3 and 4
(equivalent to channel 1 and 2)
Normal operation
L
L
L
H
L
L
L
L
H
L
H
H
H
H
H
H
L
H
H
Z
H
X
X
H
X
X
20)
Channel 1 (3)
Open load
L
H
H
H
15)
Channel 2 (4)
both channel
X
X
L
X
H
L
H
X
X
L
H
L
X
X
L
L
L
L
L
X
X
Z
H
L
L
L
X
X
L
L
L
H
H
L
L
H
L
H
L
Overtemperature
H
X
X
X
L
Channel 1 (3)
Channel 2 (4)
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
I
bb
V
V
V
ON1
ON3
Leadframe
Leadframe
bb
V
V
ON2
ON4
I
I
I
I
IN1
IN2
IN3
IN4
V
V
bb
bb
3
5
7
9
I
I
I
I
IN1
IN3
L1
L3
14
13
18
17
OUT1
OUT2
OUT3
OUT4
PROFET
Chip 1
PROFET
Chip 2
IN2
IN4
L2
L4
I
I
ST3/4
ST1/2
4
8
ST1/2
ST3/4
V
V
V
V
GND1/2
2
GND3/4
6
V
V
ST3/4
IN1
IN3
IN2
IN4
ST1/2
V
V
OUT1
OUT3
V
V
OUT4
I
I
OUT2
GND1/2
GND3/4
R
R
GND1/2
GND3/4
Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20
bb
GND
External R
optional; two resistors R
, R
=150 Ω or a single resistor R =75 Ω for reverse
GND
GND1
GND2
battery protection up to the max. operating voltage.
20)
L, if potential at the Output exceeds the OpenLoad detection voltage
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Input circuit (ESD protection), IN1 to IN4
Overvolt. and reverse batt. protection
+ 5V
+ V
bb
R
I
IN
R
ST
V
Z2
R
I
IN
ESD-ZDI
I
I
Logic
ST
OUT
GND
R
ST
V
Z1
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
GND
R
Load
R
GND
Signal GND
Load GND
Status output, ST1/2 or ST3/4
V
= 6.1 V typ., V = 47 V typ., R
= 150 Ω,
GND
Z1
ST
Z2
+5V
R
= 15 kΩ, R = 3.5 kΩ typ.
I
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
R
ST(ON)
ST
Open-load detection, OUT1...4
ESD-
ZD
OFF-state diagnostic condition:
GND
Open Load, if V
> 3 V typ.; IN low
OUT
ESD-Zener diode: 6.1 V typ., max 0.3 mA; R
< 375 Ω
ST(ON)
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
V
bb
R
EXT
Inductive and overvoltage output clamp,
OFF
OUT1...4
V
OUT
+V
bb
V
Z
Open load
detection
Logic
unit
V
ON
OUT
Signal GND
GND disconnect
Power GND
V
ON
clamped to V = 47 V typ.
ON(CL)
V
bb
IN
OUT
PROFET
ST
GND
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of IN=high is V
≈ V -V .
IN IN(T+)
OUT
Due to V
GND
> 0, no V = low signal available.
ST
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PROFET ITS 716G
GND disconnect with GND pull up
Inductive load switch-off energy
dissipation
E
bb
V
bb
IN
E
AS
E
E
OUT
PROFET
Load
L
V
bb
IN
ST
GND
OUT
PROFET
L
=
ST
V
V
V
V
IN ST
GND
GND
bb
Z
L
{
E
R
R
Any kind of load. If V
> V - V device stays off
IN IN(T+)
GND
L
Due to V
GND
> 0, no V = low signal available.
ST
Energy stored in load inductance:
2
L
V
disconnect with energized inductive
1
bb
E = / ·L·I
L
2
load
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
= Ebb + EL - ER= VON(CL)·i (t) dt,
L
AS
∫
V
high
bb
IN
with an approximate solution for R > 0Ω:
L
OUT
PROFET
I ·L
L
I ·R
L
L
E
AS
=
(V +|V
|) ln (1+
OUT(CL)
)
bb
2·R
|V
OUT(CL)
|
ST
L
GND
Maximum allowable load inductance for
4)
a single switch off (one channel)
V
bb
L = f (I ); T
= 150°C, V = 12 V, R = 0 Ω
bb L
L
j,start
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
Z [mH]
L
1000
100
10
protected against loss of V
.
bb
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
1
1
2
3
4
5
6
I
[A]
L
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PROFET ITS 716G
Typ. on-state resistance
R
= f (V ,T ); I = 2 A, IN = high
L
ON
bb j
[mOhm]
R
ON
Tj = 150°C
240
180
120
60
25°C
-40°C
0
5
7
9
11
30
40
V
bb
[V]
Typ. standby current
I
= f (T ); V = 9...34 V, IN1,2,3,4 = low
bb
bb(off)
j
I
[µA]
bb(off)
45
40
35
30
25
20
15
10
5
0
-50
0
50
100
150
200
T [°C]
j
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Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Figure 2b: Switching a lamp:
Figure 1a: V turn on:
bb
IN1
IN
IN2
V
ST
V
bb
V
OUT1
OUT
V
OUT2
ST1 open drain
ST2 open drain
I
L
t
t
Figure 2a: Switching a resistive load,
Figure 3a: Turn on into short circuit:
turn-on/off time and slew rate definition:
shut down by overtemperature, restart by cooling
IN
IN1
other channel: normal operation
VOUT
I
L1
90%
I
t
dV/dtoff
on
L(lim)
I
L(SCr)
t
dV/dton
off
10%
t
off(SC)
ST
IL
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions
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Figure 3b: Turn on into short circuit:
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
Open load of channel 1; other channels normal
operation
IN1/2
IN1
I
+ I
L1 L2
V
OUT1
2xI
L(lim)
I
L1
I
L(SCr)
ST
t
off(SC)
ST1/2
10µs
500µs
t
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
Figure 4a: Overtemperature:
Reset if T <T
j
jt
IN
ST
ST
30µs
20µs
V
OUT
T
J
t
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PROFET ITS 716G
Package and Ordering Code
Standard: PG-DSO-20-15
Published by
Sales Code
ITS 716G
SP000219534
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
Ordering Code
© Infineon Technologies AG 2006
All Rights Reserved.
All dimensions in millimetres
Attention please!
The information herein is given to describe certain components and
shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement, regarding circuits, descriptions
and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Definition of soldering point with temperature T :
s
upper side of solder edge of device pin 15.
Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system, or
to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Pin 15
Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation P , nominal load current
tot
I
and thermal resistance R
thja
L(NOM)
Infineon Technologies AG
14 of 14
2006-Mar-23
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