JAN1N7039CCU1 [INFINEON]
Rectifier Diode, Schottky, 35A, 150V V(RRM),;
| 型号： | JAN1N7039CCU1 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 35A, 150V V(RRM), 二极管 |
| 文件： | 总20页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 5 March 2008.
INCH-POUND
MIL-PRF-19500/737A
5 December 2007
SUPERSEDING
MIL-PRF-19500/737
13 November 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,
TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier
diodes for use in high frequency switching applications. Four levels of product assurance are provided for each
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (U1), and figure 3 (TO-257AA).
1.3 Maximum ratings. Unless otherwise specified, maximum ratings (T = +25°C).
C
Column 6
Column 1
Types
Column 2
Column 3
Column 4
Column 5
V
I
I
R
ΘJC
T
STG
RWM
O (1)(2)
FSM (2)
T
C
=
t = 8.3 ms,
p
(2) (3)
and
T
J
+100°C
T
C
= +25°C
V dc
150
A dc
35
A (pk)
180
°C/W
1.9
°C
1N7039CCT1
-65 to
+150
1N7039CCU1
1N7047CCT3
150
150
35
16
200
120
1.67
1.85
(1) See temperature-current derating curves in figures 4, 5, and 6.
(2) Each leg
(3) See figures 7, 8, and 9.
1.4 Primary electrical characteristics at T = +25°C, unless otherwise indicated.
A
R
= 0.95 °C/W maximum for entire package for 1N7039CCT1; R
= 40°C/W maximum, for each leg;
= 0.95 °C/W maximum for entire
ΘJC
ΘJA
ΘJC
RΘJC = 0.83 °C/W maximum for entire package for 1N7039CCU1; R
package for 1N7047CCT3.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/737A
Dimensions
Millimeters
Ltr
Inches
Max
.535
.249
.035
.510
Min
Min
13.59
6.32
Max
13.84
6.60
BL
CH
LD
.545
.260
.045
.570
0.89
12.95
1.14
14.48
LL
LO
LS
.150 BSC
.150 BSC
3.81 BSC
3.81 BSC
MHD
MHO
TL
TT
TW
.139
.149
.685
.800
.050
.545
3.53
3.78
17.40
20.32
1.27
.665
.790
.040
.535
16.89
20.07
1.02
TO-254
13.59
13.84
1
3
1N7039CCT1
2
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Dimensions and configuration for 1N7039CCT1 (TO-254AA).
2
MIL-PRF-19500/737A
U1
Symbol
Dimensions
Inches
Min Max
Millimeters
Min
15.75
11.30
3.28
0.25
10.41
3.86
5.08
2.54
9.40
3.43
0.89
1.27
Max
16.00
11.56
3.61
0.51
10.67
4.11
5.59
2.79
9.65
3.68
BL
BW
CH
.620
.445
.129
.010
.410
.152
.200
.100
.370
.630
.455
.142
.020
.420
.162
.220
.110
.380
.145
1N7039CCU1
LH
LL1
LL2
LS1
LS2
LW1
LW2
Q1
.135
.035
.050
Q2
Term 1
Term 2
Term 3
Cathode
Anode
Anode
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
* FIGURE 2. Dimensions and configuration, 1N7039CCU1.
3
MIL-PRF-19500/737A
Dimensions
Millimeters
Ltr
Inches
Max
.410
.190
.025
.500
Min
Min
10.41
4.83
Max
10.92
5.08
BL
CH
LD
.430
.200
.040
.750
0.64
12.70
1.02
19.05
LL
TO-257
LO
LS
.120 BSC
.100 BSC
3.05 BSC
2.54 BSC
MHD
MHO
TL
TT
TW
.140
.150
.537
.665
.045
.420
3.56
3.81
13.64
16.89
1.14
.527
.645
.035
.410
13.39
16.38
0.89
10.41
10.67
1
3
2
1N7047CCT3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 3. Dimensions and configuration for 1N7047CCT3.
4
MIL-PRF-19500/737A
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, and 3 herein. Methods used for electrical isolation of the terminal feedthroughs
for the TO-254 or TO-257 packages shall employ materials that contain a minimum of 90 percent Al O (ceramic).
2 3
3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figures 1 and 2 herein.
3.4.2 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-STD-750,
MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document
(see 6.2). When lead formation is performed on TO-254 or TO-257 leads, as a minimum, the vendor shall perform
100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in
accordance with table I, subgroup 2 herein.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.
5
MIL-PRF-19500/737A
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II herein).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
(see table E-IV of
MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
Method 4066 of MIL-STD-750, condition A, Method 4066 of MIL-STD-750, condition A,
one pulse, I = 0, V
O
= 0, see 1.3
one pulse, I = 0, V
= 0, see 1.3
RWM
(1)(2) 3b
RWM
O
herein, column 4.
herein, column 4.
(1) 3c
3d
9, 10
Thermal impedance (see 4.3.2)
Peak reverse energy test (see 4.3.3)
Not applicable
Thermal impedance (see 4.3.2)
Peak reverse energy test (see 4.3.3)
Not applicable
V
and I
V
and I
11
12
F1
See 4.3.1
Subgroup 2 and 3, of table I herein, V
R1
F1
See 4.3.1
Subgroup 2, of table I herein excluding
R1
F1
;
thermal impedance; V and I
;
and I
excluding thermal impedance
F1
R1
R1,
ΔV ≤50 mV (pk);
ΔV ≤50 mV (pk);
13
F1
F1
Δ I
= ±100 percent from the initial value or
Δ I
= ±100 percent from the initial value
R1
100μA dc, whichever is greater.
R1
or 100μA dc, whichever is greater.
(1) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13.
(2) Surge shall precede thermal impedance.
6
MIL-PRF-19500/737A
4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test
condition A. T = +125°C; V = 120 V dc.
J
R
4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t and V .
M H H MD
) = 70 μs max. See table III, group E, subgroup 4 herein.
C
Measurement delay time (t
MD
4.3.3 Peak reverse energy test. The peak reverse energy test is to be performed using the circuit as shown on
figure 10 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as
follows: I
= 170 mA, V
= 150 V minimum, L = 150 mH.
RM
RSM
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in
accordance with the applicable steps of table II herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (V ) and
F1
reverse leakage test (I ) herein. Delta measurements shall be in accordance with table II herein.
R1
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B4
Method
1037
Condition
ΔT = +85°C, I = 2 A minimum for 2,000 cycles.
C
F
B5
B6
1038
4081
Condition A, V = 120 V dc, T = +125°C,
R J
+0°, -10°C, t = 240 hours minimum; (heat sinking allowed).
Limit for thermal resistance for 1N7039CCT1 is 1.90°C/W for each leg.
Limit for thermal resistance for 1N7039CCU1 is 1.67°C/W for each leg.
Limit for thermal resistance for 1N7047CCT3 is 1.85°C/W for each leg.
4.4.2.2 Group B inspection, table E-VIb (JANTXV, JANTX, JAN and) of MIL-PRF-19500.
Subgroup
B3
Method
1037
Condition
ΔT = +85°C minimum, I = 2 A minimum for 2,000 cycles.
F
C
B5
3101
or 4081
Limit for thermal resistance for 1N7039CCT1 is 1.90°C/W for each leg.
Limit for thermal resistance for 1N7039CCU1 is 1.67°C/W for each leg.
Limit for thermal resistance for 1N7047CCT3 is 1.85°C/W for each leg.
7
MIL-PRF-19500/737A
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2, forward voltage test (V ) and reverse leakage test (I ) herein. Delta measurements shall be
F1
R1
in accordance with table II herein.
Subgroup
C2
Method
2036
Condition
Condition A, weight = 10 lbs, t = 15 seconds.
= 2 A minimum for 6,000 cycles.
C6
1037
ΔT = +85°C, minimum, I
C F
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein except Z
subgroup 2.
need not be performed after group E
ΘJX
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
8
MIL-PRF-19500/737A
TABLE I. Group A inspection.
MIL-STD-750
Conditions
Inspection
1/ 2/
Limits
Min Max
Unit
Symbol
Method
2071
Subgroup 1
Visual and mechanical
examination
Subgroup 2
3101
4011
See 4.3.2
Pulsed test (see 4.5.1)
Z
°C/W
Thermal impedance
ΘJX
V
Forward voltage
1N7039CCT1
1N7039CCU1
1N7047CCT3
F1
I
I
I
= 15A (pk)
= 15A (pk)
= 8A (pk)
1.13
1.13
0.91
V dc
V dc
V dc
F
F
F
4011
4016
Pulsed test (see 4.5.1)
V
Forward voltage
1N7039CCT1
1N7039CCU1
1N7047CCT3
F2
I
I
I
= 35 A(pk)
= 35 A(pk)
= 16 A(pk)
1.60
1.60
1.13
V dc
V dc
V dc
F
F
F
DC method
I
Reverse current
1N7039CCT1
1N7039CCU1
1N7047CCT3
R1
V
R
V
R
V
R
= 150 V
= 150 V
= 150 V
0.5
0.5
0.5
mA dc
mA dc
mA dc
Subgroup 3
High temperature
operation:
T
C
= +125 °C
Pulsed test (see 4.5.1)
V
Forward voltage
1N7039CCT1
1N7039CCU1
1N7047CCT3
F3
I
I
I
= 15 A(pk)
= 15 A(pk)
= 8 A(pk)
0.86
0.86
0.73
V dc
V dc
V dc
F
F
F
Pulsed test (see 4.5.1)
V
Forward voltage
1N7039CCT1
1N7039CCU1
1N7047CCT3
F4
I
I
I
= 35 A(pk)
= 35 A(pk)
= 16 A(pk)
1.20
1.20
0.94
V dc
V dc
V dc
F
F
F
4016
DC method;
I
Reverse current
1N7039CCT1
1N7039CCU1
1N7047CCT3
R2
V
R
V
R
V
R
= 150 V
= 150 V
= 150 V
15
15
15
mA dc
mA dc
mA dc
See footnotes at end of table.
9
MIL-PRF-19500/737A
TABLE I. Group A inspection – Continued.
MIL-STD-750
Limits
Min Max
Inspection
1/ 2/
Unit
Symbol
Method
Conditions
Subgroup 3 - continued
Low temperature
operation:
T
C
= -55°C
Forward voltage
4011
4011
Pulsed test (see 4.5.1)
V
V
F5
F6
1N7039CCT1
1N7039CCU1
1N7047CCT3
I
I
I
= 15 A dc
= 15A (pk)
= 8 A dc
F
F
F
1.35
1.35
1.02
V dc
V dc
V dc
Forward voltage
Pulsed test (see 4.5.1)
I
= 16 A dc
1.18
350
V dc
pF
1N7047CCT3
F
Subgroup 4
Junction capacitance
4001
V
V
= 5 V dc, f = 1 MHz,
C
J
R
= 50 mV (p-p)
SIG
Subgroup 5
Not applicable
Subgroup 6
Surge
4066
See column 4 of 1.3. ten surges
each internal diode. 60 seconds
between surges. (see 4.5.1)
Electrical measurements
Subgroup 7
See table I, subgroup 2 herein.
Dielectric withstanding
voltage
1016
4023
V
= 500 V dc; all leads shorted;
DWV
10
μA dc
R
measure from leads to case
Scope display evaluation
Electrical measurements
Stable only
See table I, subgroup 2 herein.
1/ For sampling plan, see MIL-PRF-19500.
2/ Electrical characteristics apply to all package styles and polarities.
10
MIL-PRF-19500/737A
TABLE II. Groups B and C delta requirements. 1/ 2/ 3/ 4/ 5/ 6/
Step
1.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
4011
Forward voltage
1N7039CCT1
ΔV
±50 mV dc from initial
reading.
F1
I
= 15 A (pk)
F
pulsed (see 4.5.1)
I = 15 A (pk)
F
1N7039CCU1
1N7047CCT3
Reverse current
pulsed (see 4.5.1)
I
= 8 A (pk)
F
pulsed (see 4.5.1)
2.
3.
4016
3101
V
R
= 150 V dc
ΔI
≤ ±100 percent from the
initial value or ±100μA
dc, whichever is greater.
R1
Thermal impedance
See 4.3.2
Z
ΘJX
1/ Each internal diode.
2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table II herein, steps 1, 2, and 3.
b. Subgroup 5, see table II herein, steps 1 and 2.
3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, steps 1, 2, and 3.
b. Subgroup 3, see table II herein, steps 1, 2, and 3.
c. Subgroup 6, see table II herein, steps 1 and 2.
4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows:
a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels.
b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels.
5/ Devices which exceed the table I limits for this test shall not be accepted.
6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows:
a. Subgroup 1, see table II herein, steps 1, 2, and 3.
b. Subgroup 2, see table II herein, steps 1 and 2.
11
MIL-PRF-19500/737A
TABLE III. Group E inspection (all quality levels) – for qualification and requalification only.
MIL-STD-750
Qualification
Inspection
Method
Conditions
Subgroup 1
n = 12, c = 0
Temperature cycling
(air to air)
1051
1071
Test condition G, 500 cycles, -55°C to +150°C.
Hermetic seal
Electrical
See table I, subgroup 2.
measurements
Subgroup 2
Life test
n = 12, c = 0
1048
t = 1,000 hours, T = +125°C, V = 80 percent rated voltage
J
R
(see 1.3, column 2 herein).
Electrical
See table I subgroup 2.
measurements
Subgroup 4
Thermal impedance
curves
See MIL-PRF-19500.
Subgroup 6
ESD
n = 3, c = 0
n = 5, c = 0
1020
4066
Subgroup 7 1/
Surge
1N7039CCT1
Condition A, T = +25°C I
= 180 A, ten surges of 8.3 ms
FSM
A
superimposed on I . V = 0; I = 10 A pk half sine wave,
O
R
O
continuous.
1N7039CCU1
1N7047CCT3
Condition A, T = +25°C, I
= 200 A, ten surges of 8.3 ms
A
FSM
superimposed on I . V = 0; I = 10 A pk half sine wave,
O
R
O
continuous.
Condition A, T = +25°C I
= 120 A, ten surges of 8.3 ms
A
FSM
superimposed on I . V = 0; I = 10 A pk half sine wave,
O
R
O
continuous.
Electrical
measurements
See table I subgroup 2 (V and I only).
F
R
1/ Each individual diode.
12
MIL-PRF-19500/737A
TEMPERATURE-CURRENT DERATING CURVE
1N7039CCT1
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
SWITCH MODE OPERATION 80% DC
T
(°C) (CASE)
C
R
= 0.95°C/W
ΘJC
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate current for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating
J
specified. (See 1.3 herein.)
3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤, 125°C, and 110°C to show current rating where most users want to limit
J
T in their application.
J
FIGURE 4. Temperature-current derating curve (entire package) 1N7039CCT1.
13
MIL-PRF-19500/737A
TEMPERATURE-CURRENT DERATING CURVE
1N7039CCU1
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
Switch Mode Operation 80.00% D/C
SWITCH MODE OPERATION 80% DC
T
(°C) (CASE)
C
R
= 0.83°C/W
ΘJC
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate current for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating
J
specified. (See 1.3 herein.)
3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤, 125°C, and 110°C to show current rating where most users want to limit
J
T in their application.
J
FIGURE 5. Temperature-current derating curve (for each leg) for 1N7039CCU1.
14
MIL-PRF-19500/737A
TEMPERATURE-CURRENT DERATING CURVE
1N7047CCT3
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
Switch Mode Operation 80.00% D/C
SWITCH MODE OPERATION 80% D/C
T
(°C) (CASE)
C
R
= 0.95°C/W
ΘJC
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate current for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating
J
specified. (See 1.3 herein.)
3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤, 125°C, and 110°C to show current rating where most users want to limit
J
T in their application.
J
FIGURE 6. Temperature-current derating curve, 1N7047CCT3.
15
MIL-PRF-19500/737A
10.00
1.00
0.10
Notes:
1. Duty factor D = t 1/t2
2. Peak T = Pdm x Z
+ T
C
J
ΘJC
D=0.5
D=0.4
D=0.3
D=0.2
D=0.1
Single Pulse
(Thermal Resistance)
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, RECTANGULAR PULSE DURATION (Sec)
FIGURE 7. Thermal impedance (for each leg) 1N7039CCT1.
10.00
1.00
0.10
Notes:
1. Duty factor D = t 1/t2
2. Peak T = Pdm x Z
+ T
C
J
ΘJC
D=0.5
D=0.4
D=0.3
D=0.2
D=0.1
Single Pulse
(Thermal Resistance)
0.00001
0.0001
0.001
0.01
0.1
1
t1, RECTANGULAR PULSEDURATION (Sec)
FIGURE 8. Thermal impedance (for each leg), 1N7039CCU1.
16
MIL-PRF-19500/737A
10.00
1.00
0.10
Notes:
1. Duty factor D = t 1/t2
2. Peak T = Pdm x Z
+ T
C
J
ΘJC
D=0.5
D=0.4
D=0.3
D=0.2
D=0.1
Single Pulse
(Thermal Resistance)
0.0001
0.001
0.01
0.1
1
10
t1, RECTANGULAR PULSE DURATION (Sec)
FIGURE 9. Thermal impedance, 1N7047CCT3 (for each leg).
17
MIL-PRF-19500/737A
Input pulse R = 50 ohms, 1 watt
in
V
Z
= 10 Volts, R = 0.1 ohms, 1 watt
= 50 ohms
G
G
S
L = 150mH
P.W. ≈ 30 μs
Duty cycle ≤ 1 percent, T = IRF350/2N6768 or equivalent
Procedure:
1. With S open, adjust pulse width to test current of 1 amp across R .
S
2. Close S, verify test current with current sense.
3. Read peak output voltage (see 4.3.3).
FIGURE 10. Peak reverse energy test circuit.
18
MIL-PRF-19500/737A
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by
contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish and formation (see 3.4.2).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML-19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil .
6.4 Cross reference substitution list. A PIN for PIN replacement table follows, and these devices are directly
interchangeable.
Non-preferred PIN
Preferred PIN
12CGQ150
12CLQ150
16CYQ150, 16CYQ150C
JANS, JANTXV, JANTX1N7039CCT1
JANS, JANTXV, JANTX1N7039CCU1
JANS, JANTXV, JANTX1N7047CCT3
19
MIL-PRF-19500/737A
* 6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2007-115)
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://assist.daps.dla.mil .
20
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