JANS2N6851 [INFINEON]
HEXFET TRANSISTORS THRU-HOLE (TO-205AF); HEXFET晶体管直通孔（ TO- 205AF ）
| 型号： | JANS2N6851 |
| 厂家： | 
Infineon |
| 描述： | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 文件： | 总7页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90551D
IRFF9230
JANTX2N6851
REPETITIVEAVALANCHEANDdv/dtRATED
HEXFET TRANSISTORS
JANTXV2N6851
JANS2N6851
THRU-HOLE (TO-205AF)
REF:MIL-PRF-19500/564
200V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF9230 -200V 0.80Ω
ID
-4.0A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
TO-39
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C
Continuous Drain Current
-4.0
-2.4
-16
D
GS
C
A
I
= -10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.20
±20
V
GS
Gate-to-SourceVoltage
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
75
mJ
AS
I
—
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
—
mJ
AR
dv/dt
-5.0
-55 to 150
V/ns
T
J
T
STG
StorageTemperature Range
oC
g
LeadTemperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
For footnotes refer to the last page
www.irf.com
1
04/20/01
IRFF9230
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
Reference to 25°C, I = -1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
-0.22
V/°C
DSS
J
D
R
Static Drain-to-Source On-State
Resistance
GateThresholdVoltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
2.2
—
—
—
—
—
—
—
0.80
1.68
-4.0
—
V
= -10V, I = -2.4A ➀
GS D
DS(on)
Ω
V
=-10V, I =-4.0A ➀
GS
DS
D
V
V
V
= V , I = -250µA
GS
GS(th)
D
Ω
g
fs
S ( )
V
> -15V, I = -2.4A ➀
DS
DS
I
-25
-250
V = -160V,V =0V
DS GS
DSS
—
µA
V
= -160V
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
34.8
7.0
17
V
V
= -20V
GSS
GS
I
nA
nC
= 20V
GSS
GS
Q
14.7
0.8
5.0
—
V
=-10V, ID = -4.0A
GS
g
Q
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DS
= -100V
gs
gd
t
50
V
= -100V, I = -4.0A,
DD D
=-10V,R =7.5Ω
GS G
d(on)
t
—
—
100
100
80
V
r
ns
t
d(off)
t
—
f
L
L
D
Total Inductance
—
—
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S +
nH
C
C
oss
C
rss
Input Capacitance
Output Capacitance
—
—
—
700
200
40
V
= 0V,V
= -25V
f = 1.0MHz
iss
GS DS
—
—
pF
Reverse Transfer Capacitance
Source-DrainDiodeRatingsandCharacteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode ForwardVoltage
—
—
—
—
—
—
—
—
—
—
-4.0
-20
-6.0
400
4.0
S
A
I
SM
V
V
T = 25°C, I =-4.0A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = -4.0A, di/dt ≤ -100A/µs
j
rr
RR
F
V
≤ -50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
—
—
5.0
thJC
°C/W
R
thJA
Junction-to-Ambient
175
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFF9230
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
www.irf.com
3
IRFF9230
13 a& b
Fig6. TypicalGateChargeVs.
Fig5. TypicalCapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig8. MaximumSafeOperatingArea
Fig7. TypicalSource-DrainDiode
ForwardVoltage
4
www.irf.com
IRFF9230
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig10a. SwitchingTimeTestCircuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig9. MaximumDrainCurrentVs.
CaseTemperature
Fig10b. SwitchingTimeWaveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
IRFF9230
L
V
DS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
VGS
0.01
t
Ω
p
15V
Fig12a. UnclampedInductiveTestCircuit
I
AS
Fig12c. MaximumAvalancheEnergy
Vs.DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
1
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
Fig13a. BasicGateChargeWaveform
6
www.irf.com
IRFF9230
Foot Notes:
➀➀ I ≤ -4.0A, di/dt ≤ -120A/µs,
SD
➀➀Repetitive Rating; Pulse width limited by
V
DD
≤ -200V, T ≤ 150°C
maximum junction temperature.
J
Suggested RG = 7.5 Ω
➀➀➀V
= -50V, starting T = 25°C,
DD
J
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = -4.0A,V
=-10V
GS
L
Case Outline and Dimensions —TO-205AF
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
www.irf.com
7
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