JANS2N7236U [INFINEON]

POWER MOSFET SURFACE MOUNT (SMD-1); 功率MOSFET表面贴装（ SMD - 1 ）


型号：	JANS2N7236U
厂家：	Infineon
描述：	POWER MOSFET SURFACE MOUNT (SMD-1) 功率MOSFET表面贴装（ SMD - 1 ）晶体晶体管功率场效应晶体管开关脉冲
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PD - 91553F

IRFN9140

JANTX2N7236U

JANTXV2N7236U

JANS2N7236U

REF:MIL-PRF-19500/595

100V, P-CHANNEL

POWER MOSFET

SURFACE MOUNT(SMD-1)

Product Summary

HEXFET^®MOSFETTECHNOLOGY

Part Number RDS(on)

IRFN9140 0.20Ω -18A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance. HEXFET tran-

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-18

-11

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-72

@ T = 25°C

125

W/°C

Linear Derating Factor

1.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

-18

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

-5.0

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Package Mounting Surface Temperature

Weight

300 (for 5 S)

2.6(typical)

For footnotes refer to the last page

www.irf.com

09/22/03

IRFN9140

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.087

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.20

0.22

-4.0

—

= -10V, I = -11A➀

DS(on)

Ω

= -10V, I = -18A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

6.2

—

S ( )

= V , I = -250µA

GS(th)

Ω

> -15V, I

= -11A➀

-25

= -80V, V = 0V

DS GS

DSS

µA

—

-250

= -80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

-100

100

= -20V

GSS

= 20V

= -10V, ID -18A

GS =

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

= -50V

35.2

= -50V, I = -18A

= 9.1Ω, V

= -10V

Turn-Off Delay Time

Fall Time

d(off)

Total Inductance

—

S +

Measured from the center of

drain pad to center of source

pad

Input Capacitance

—

1400

600

200

= 0V, V

= -25V

iss

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

—

oss

rss

Source-DrainDiodeRatingsandCharacteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

-18

-72

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-5.0

280

3.6

T = 25°C, I = -18A, V

= 0V ➀

µc

T = 25°C, I = -18A, di/dt ≤-100A/µs

≤ -30V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction to Case

Junction to PC Board

—

4.0

1.0

—

thJC

thJ-PCB

°C/W

Soldered to a copper-clad PC board

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

www.irf.com

IRFN9140

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFN9140

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFN9140

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

90%

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFN9140

D S

D .U .T

D D

A S

D R IV ER

V_G_0V

-2

0.0 1

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-10V

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFN9140

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

➀ I

≤ -18A, di/dt ≤ −100A/µs,

≤ -100V, T ≤ 150°C

maximum junction temperature.

➀ V

=-25V, starting T = 25°C, L = 3.1mH

Peak I = -18A, V

➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= -10V

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

1- DRAIN

2- GATE

3- SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 09/03

www.irf.com

JANS2N7236U [INFINEON]

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