JANSR2N7269 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔（ TO- 254AA ）
| 型号： | JANSR2N7269 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 文件： | 总13页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90674C
IRHM7250
JANSR2N7269
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
200V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM7250
IRHM3250
IRHM4250
IRHM8250
100K Rads (Si) 0.10Ω
300K Rads (Si) 0.10Ω
600K Rads (Si) 0.10Ω
1000K Rads (Si) 0.10Ω
26A JANSR2N7269
26A JANSF2N7269
26A JANSG2N7269
26A JANSH2N7269
TO-254AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
26
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
16
104
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
Linear Derating Factor
1.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
±20
GS
E
500
mJ
A
AS
I
26
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
15
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/11/00
IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
=0 V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.27
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
8.0
—
—
—
—
—
—
—
0.10
0.11
4.0
—
V
V
= 12V, I = 16A
D
DS(on)
GS
GS
Ω
= 12V, I = 26A
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 16A
DS
V
DS
I
25
250
= 160V,V =0V
DSS
DS GS
µA
—
V
= 160V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
30
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 26A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 100V
DS
60
t
t
t
t
33
V
DD
= 100V, I = 26A,
D
140
140
140
—
R
G
= 2.35Ω
ns
d(off)
f
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
L
Total Inductance
S +
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
4700
850
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
210
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
S
A
SM
V
T = 25°C, I = 26A, V
= 0V ➃
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 26A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
V
≤ 25V ➃
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.83
—
48
thJC
thCS
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHM7250, JANSR2N7269
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➄➅
1
Parameter
Min
Drain-to-Source Breakdown Voltage 200
100KRads(Si)
600 to 1000K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
—
200
1.25
—
—
4.5
100
-100
50
V
= 0V, I = 1.0mA
GS D
= V , I = 1.0mA
GS
DS D
DSS
V
V
Gate Threshold Voltage
➃
2.0
—
—
—
—
4.0
V
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
100
-100
25
V
GS
= 20V
GSS
nA
I
—
V
GS
= -20 V
GSS
I
—
µA
V
=160V, V =0V
DS GS
DSS
R
DS(on)
➃
0.094
—
0.149
Ω
V
= 12V, I =16A
D
GS
GS
R
DS(on)
➃
—
—
0.10
1.4
—
—
0.155
1.4
Ω
V
= 12V, I =16A
D
V
SD
➃
V
V
= 0V, I = 26A
GS S
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
39
Cu
Br
190
100
180
100
170
100
125
50
—
—
36.8
305
200
150
100
50
Cu
Br
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
Post-Irradiation
IRHM7250, JANSR2N7269
Fig 1. Typical Response of Gate Threshhold
Fig 2. Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Fig 3. Typical Response of Transconductance
Breakdown Vs. Total Dose Exposure
Vs. Total Dose Exposure
4
www.irf.com
Post-Irradiation
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
www.irf.com
5
RadiationCharacteristics
IRHM7250, JANSR2N7269
GS
DS
Note: Bias Conditions during radiation:V = 12 Vdc, V = 0 Vdc
Fig 10. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
Post-Irradiation 300K Rads (Si)
6
www.irf.com
Radiation Characteristics
IRHM7250, JANSR2N7269
GS
DS
Note: Bias Conditions during radiation:V = 0 Vdc, V = 160 Vdc
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Fig 17. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads(Si)
www.irf.com
7
IRHM7250, JANSR2N7269
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance
Vs.Temperature
8
www.irf.com
Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 23. Typical Gate Charge Vs.
Fig 22. Typical CapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 25. Maximum Safe Operating
Fig 24. Typical Source-Drain Diode
Area
ForwardVoltage
www.irf.com
9
IRHM7250, JANSR2N7269
Pre-Irradiation
RD
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 26. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
www.irf.com
Pre-Irradiation
IRHM7250, JANSR2N7269
15V
DRIVER
L
V
D S
D.U.T
R
G
+
-
V
D D
I
A
AS
12V
2
0.01
Ω
t
p
Fig 28a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 28c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 28b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
www.irf.com
11
IRHM7250, JANSR2N7269
Foot Notes:
Pre-Irradiation
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➁ V
= 25V, starting T = 25°C, L= 1.5mH
J
GS
DS
DD
Peak I = 26A, V
irradiation per MIL-STD-750, method 1019, condition A.
= 12V
L
GS
➅ Total Dose Irradiation with V Bias.
➂ I
SD
≤ 26A, di/dt ≤ 190A/µs,
DS
applied and V = 0 during
GS
160 volt V
V
≤ 200V, T ≤ 150°C
DS
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
LEGEND
1- DRAIN
2- SOURCE
3X
3.81
(
.150
)
3.81
( .150 )
IRHM7250D
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
IRHM7250U
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
12
www.irf.com
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
相关型号：
JANSR2N7269D
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
INFINEON
JANSR2N7270
Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL
INFINEON
JANSR2N7270D
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
JANSR2N7278
Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明