JANSR2N7426 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔（ TO- 254AA ）
| 型号： | JANSR2N7426 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93858
IRHM9260
JANSR2N7426
200V,P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
REF: MIL-PRF-19500/660
RAD-Hard™ HEXFET® TECHNOLOGY
Part Number Radiation Level
RDS(on)
ID QPL Part Number
IRHM9260
100K Rads (Si)
300K Rads (Si)
0.160Ω -27A JANSR2N7426
0.160Ω -27A JANSF2N7426
IRHM93260
TO-254AA
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-27
D
GS
C
A
I
D
= -12V, T = 100°C Continuous Drain Current
-17
-108
250
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/°C
V
D
C
2.0
V
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-27
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
-9.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
For footnotes refer to the last page
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1
11/27/00
IRHM9260, JANSR2N7426
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.28
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.160
Ω
V = -12V, I = -17A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
13
—
—
—
—
—
-4.0
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> -15V, I
= -17A ➀
DS
I
-25
-250
V
= -160V ,V =0V
GS
DSS
DS
µA
—
V
= -160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
300
60
V
V
= -20V
= 20V
GSS
GSS
g
GS
nA
nC
GS
Q
V
=-12V, I = -27A
GS D
Q
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= -100V
gs
DS
70
gd
t
t
t
t
37
V
DD
= -100V, I = -27A
d(on)
D
83
R
= 2.35Ω
r
G
ns
140
172
—
d(off)
f
L
+ L
Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
—
—
—
6220
903
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
C
Reverse Transfer Capacitance
150
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-27
-108
-3.3
600
10
S
SM
A
V
V
T = 25°C, I = -27A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = -27A, di/dt ≥ 100A/µs
j
rr
RR
F
V
≤ -50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
48
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM9260, JANSR2N7426
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
Parameter
100K Rads(Si)1
300K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
-200
-2.0
—
—
-200
-2.0
—
—
-5.0
-100
100
V
= 0V, I = -1.0mA
DSS
GS D
V
V
GateThresholdVoltage
➀
-4.0
-100
100
- 25
0.154
V
= V , I = -1.0mA
GS(th)
GS
DS
D
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero GateVoltage Drain Current
V
= -20V
= 20 V
GSS
GSS
DSS
GS
nA
—
—
V
GS
—
—
—
—
-25
0.154
µA
Ω
V
V
= -160V, V
=0V
DS
GS
GS
R
R
V
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode ForwardVoltage
➀
= -12V, I =-17A
D
DS(on)
DS(on)
SD
➀
—
—
0.160
-3.3
—
—
0.160
-3.3
Ω
V
= -12V, I = -17A
D
GS
➀
V
V
= 0V, I = -27A
GS S
1. Part number IRHM9260
2. Part number IRHM93260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm)
43.0
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
-200
-200
-200
-200
—
36.8
305
39.0
-200
-200
-125
-75
—
-250
-200
-150
-100
-50
Cu
Br
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9260, JANSR2N7426
Pre-Irradiation
1000
100
10
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
100
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
°
°
J
10
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
-27A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHM9260, JANSR2N7426
10000
V
20
16
12
8
= 0V,
f = 1MHz
gd , ds
I
D
= -27A
GS
C
= C + C
C
SHORTED
V
V
V
= 160V
= 100V
= 40V
iss
gs
DS
DS
DS
C
= C
gd
rss
C
= C + C
8000
6000
4000
2000
0
oss
ds
gd
C
iss
4
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
50
100
150
200
250
300
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
°
T = 25 C
1ms
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
1
1.0
2.0
3.0
4.0
5.0
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHM9260, JANSR2N7426
Pre-Irradiation
RD
30
25
20
15
10
5
VDS
VGS
D.U.T.
RG
-
+
VDD
-12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
C
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM9260, JANSR2N7426
1200
1000
800
600
400
200
0
L
I
V
DS
D
TOP
-12A
-17A
BOTTOM -27A
D.U.T
R
.
G
V
DD
A
I
AS
DRIVER
V
-12V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-
-12 V
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM9260, JANSR2N7426
Footnotes:
Pre-Irradiation
➀➀➀Total Dose Irradiation with V
Bias.
= 0 during
➀➀ Repetitive Rating; Pulse width limited by
GS
-12 volt V
applied and V
DS
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
➀➀➀V
=-50V, starting T = 25°C, L= 3.3mH,
J
DD
Peak I =- 27A, V
= -12V
➀➀Total Dose Irradiation with V
Bias.
L
GS
DS
-160 volt V
applied and V
= 0 during
➀➀I ≤ - 27A, di/dt ≤ -280A/µs,
DS
GS
SD
irradiation per MlL-STD-750, method 1019, condition A
V
≤ - 200V, T ≤ 150°C
J
DD
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
31.40 [1.235]
30.35 [1.195]
1
2
3
1
2
3
B
17.40 [.685]
16.89 [.665]
4.06 [.160]
3.56 [.140]
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
3X
0.36 [.014]
B A
3.81 [.150]
3.81 [.150]
2X
PIN ASSIGNMENTS
0.36 [.014]
B
A
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
NOT ES :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA BEFORE LEADFORMING.
4. CONFORMS TO JEDEC OUT LINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
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