JANSR2N7473U2 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2); 抗辐射功率MOSFET直通孔（ SMD - 2 ）
| 型号： | JANSR2N7473U2 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2) |
| 文件： | 总8页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91839J
IRHNA57260SE
JANSR2N7473U2
200V, N CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (SMD-2)
REF:MIL-PRF-19500/684
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
Features:
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
53.5
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
34
214
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
380
mJ
A
AS
I
53.5
25
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
9.2
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
For footnotes refer to the last page
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1
04/25/06
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.26
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.038
Ω
V
= 12V, I = 34A
GS D
Ã
DS(on)
2.5
35
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
DS
> 15V, I
= 34A Ã
DS
I
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
155
45
75
35
125
80
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 53.5A
g
gs
gd
d(on)
r
GS
D
V
DS
= 100V
t
t
t
t
V
DD
= 100V, I = 53.5A,
=12V, R = 2.35Ω
GS G
D
V
ns
d(off)
f
L
+ L
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6044
913
65
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
53.5
214
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
450
7.0
V
nS
µC
T = 25°C, I = 53.5A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 53.5A, di/dt ≤ 100A/µs
j
F
V
≤ 50V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
1.6
0.5
—
thJC
thJ-PCB
°C/W
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA57260SE, JANSR2N7473U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
200
2.0
—
—
—
—
4.5
100
-100
10
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
Gate Threshold Voltage
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
= 20V
GSS
nA
µA
V
= -20V
GSS
GS
I
V
=160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
DS(on)
—
0.039
Ω
V
GS
= 12V, I = 34A
D
R
DS(on)
—
—
0.038
1.2
Ω
V
= 12V, I = 34A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 45A
D
GS
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
200
200
200
200
200
200
200
200
150
200
185
50
200
120
25
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
3.0
50.3A
=
53.5A
I
D
°
T = 25 C
J
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
= 50V
V
DS
20µs PULSE WIDTH
V
=12V
GS
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHNA57260SE, JANSR2N7473U2
20
16
12
8
10000
I
D
= 53.5A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
= 160V
= 100V
= 40V
DS
C
= C + C
iss
gs
gd ,
V
DS
C
= C
rss
gd
V
DS
C
= C + C
8000
6000
4000
2000
0
oss
ds
gd
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
1
°
T = 150 C
J
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
°
T = 25 C
10ms
J
V
= 0 V
GS
1.2
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.4
1.0
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
RD
60
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA57260SE, JANSR2N7473U2
800
600
400
200
0
I
D
TOP
24A
34A
15V
BOTTOM 53.5A
DRIVER
+
L
V
DS
D.U.T
.
.
R
G
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNA57260SE, JANSR2N7473U2
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á
V
= 50V, starting T = 25°C, L= 0.27mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 53.5A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
Â
I
SD
DD
≤ 53.5A, di/dt ≤ 190A/µs,
≤ 200V, T ≤ 150°C
J
DS
applied and V = 0 during
GS
160 volt V
V
DS
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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