JANTX2N7221UPBF [INFINEON]

Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN;


型号：	JANTX2N7221UPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN 开关脉冲晶体管
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中文：	中文翻译
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PD-91550D

IRFN340

JANTX2N7221U

JANTXV2N7221U

POWER MOSFET

SURFACE MOUNT(SMD-1)

REF:MIL-PRF-19500/596

400V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFN340

0.55 Ω

10A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

= 10V, T = 100°C Continuous Drain Current

6.0

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

125

W/°C

1.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

650

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

12.5

4.0

V/ns

dv/dt

-55 to 150

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

STG

300(for 5 seconds)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

03/10/11

IRFN340

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.46

—

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

4.9

—

0.55

0.70

4.0

—

250

= 10V, I = 6.0A

GS D

DS(on)

Ω

= 10V, I = 10A

= V , I = 250µA

GS(th)

=15V, I

= 6.0A Ã

= 320V ,V =0V

DSS

DS GS

µA

—

= 320V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

4.0

100

-100

40.5

—

= 20V

= -20V

GSS

=10V, I = 10A

d(on)

GS D

= 200V

= 200V, I = 10A,

=10V, R = 2.35Ω

d(off)

Measured from the center of drain

pad to center of source pad.

+ L

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

1400

3500

2300

—

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.5

600

5.6

µC

T = 25°C, I = 10A, V

= 0V Ã

T = 25°C, I = 10A, di/dt ≤ 100A/µs

≤ 30V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

4.0

1.0

—

thJC

thJ-PCB

°C/W

Soldered to a copper-clad PC board

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

www.irf.com

IRFN340

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFN340

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED BY R (on)

100 s

1ms

10ms

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

100

1000

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFN340

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFN340

15V

DRIVER

D.U.T

20V

0.01Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

102V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFN340

Footnotes:

≤ 10A, di/dt ≤ 120A/µs,

Repetitive Rating; Pulse width limited by

maximum junction temperature.

≤ 400V, T ≤ 150°C

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 50V, starting T = 25°C, L= 13mH

Peak I = 10A, V

= 10V

Case Outline and Dimensions — SMD-1

PADASSIGNMENTS

1- DRAIN

2- GATE

3- SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/2011

www.irf.com

JANTX2N7221UPBF [INFINEON]

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