JANTXV2N6766 [INFINEON]
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A); 功率MOSFET N沟道（ BVDSS = 200V ， RDS（ON） = 0.085ohm ，ID = 30A ）
| 型号： | JANTXV2N6766 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A) |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.338D
JANTX2N6766
JANTXV2N6766
[REF:MIL-PRF-19500/543]
HEXFET® POWER MOSFET
[GENERIC:IRF250]
N-CHANNEL
Product Summary
200 Volt, 0.085Ω HEXFET
Part Number
JANTX2N6766
JANTXV2N6766
BVDSS
RDS(on)
ID
HEXFETtechnology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
200V
30A
0.085Ω
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
Absolute Maximum Ratings
Parameter
JANTX2N6766, JANTXV2N6766 Units
I
D
@ V
= 10V, T = 25°C Continuous Drain Current
30
GS
C
A
I
@ V
= 10V, T = 100°C Continuous Drain Current
19
120
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single PulseAvalanche Energy ➁
Avalanche Current➀
DM
@ T = 25°C
P
150
W
W/K ➄
V
D
C
1.2
V
GS
±20
E
AS
500
mJ
I
30
A
AR
E
RepetitiveAvalanche Energy➀
Peak Diode Recovery dv/dt ➂
Operating Junction
15
mJ
AR
dv/dt
5.0
V/ns
T
-55 to 150
J
oC
g
T
STG
StorageTemperature Range
Lead Temperature
(0.063 in. (1.6mm) from
300
case for 10.5 seconds)
11.5 (typical)
Weight
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JANTX2N6766, JANTXV2N6766 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.29
DSS
J
D
Voltage
➃
= 10V, I = 19A
D
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
2.0
9.0
—
—
—
—
—
—
—
0.085
0.090
4.0
—
25
V
V
DS(on)
GS
GS
Ω
V
S ( )
= 10V, I = 30A
D
V
g
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
GS
D
Ω
> 15V, I
= 19A ➃
DS
I
V
= 0.8 x Max Rating,V = 0V
GS
DSS
DS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
J
GS
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
55
8
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
115
22
60
35
190
170
130
—
V
= 20V
GSS
GS
nA
nC
I
V
= -20V
GS
GSS
Q
Q
Q
V
= 10V, I = 30A
g
gs
gd
GS D
V
= Max. Rating x 0.5
DS
see figures 6 and 13
t
V
= 100V, I = 30A,
d(on)
DD D
t
R
G
= 3.5Ω, VGS= 10V
r
ns
t
d(off)
t
L
see figure 10
f
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
D
S
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
13
—
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
3500
700
110
—
—
—
V
= 0V, V
f = 1.0 MHz
see figure 5
= 25V
DS
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
30
120
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.9
950
9.0
V
ns
µC
T = 25°C, I = 30A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 30A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
0.83
thJC
thJA
Junction-to-Ambient
—
—
48
K/W
Typical socket mount
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JANTX2N6766, JANTXV2N6766 Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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JANTX2N6766, JANTXV2N6766 Device
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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JANTX2N6766, JANTXV2N6766 Device
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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JANTX2N6766, JANTXV2N6766 Device
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁ @ V
= 50V, Starting T = 25°C,
J
DD
= [0.5
2
E
L
(I ) [BV
/(BV
-V )]
DSS DD
AS
*
*
*
DSS
L
Peak I = 30A, V
= 10V, 25 ≤ R ≤ 200Ω
L
GS
G
➂ I
SD
≤ 30A, di/dt ≤ 190A/µs,
V
≤ BV
, T ≤ 150°C
DSS J
DD
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-204AA(Modified TO-3)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/96
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