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JANTXV2N6790U [INFINEON]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
JANTXV2N6790U
元器件型号： JANTXV2N6790U
生产厂家： INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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PDF文件： 总29页 (文件大小：401K)
下载文档：  下载PDF数据表文档文件
型号参数：JANTXV2N6790U参数
 查看货源

JANTXV2N6792

 POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)

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17 IRF

JANTXV2N6792

 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 RENESAS

JANTXV2N6792U

 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package

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9 ETC

JANTXV2N6792U

 Power Field-Effect Transistor, 1.8A I(D), 400V, 2.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

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0 INFINEON

JANTXV2N6794

 POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)

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22 IRF

JANTXV2N6794

 Power Field-Effect Transistor, 1.5A I(D), 500V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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0 INFINEON

JANTXV2N6794U

 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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16 IRF

JANTXV2N6794U

 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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20 IRF

JANTXV2N6796

 POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)

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50 IRF

JANTXV2N6796

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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6 ETC

JANTXV2N6796

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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20 ETC

JANTXV2N6796

 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

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41 MICROSEMI

JANTXV2N6796E3

 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

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10 MICROSEMI

JANTXV2N6796U

 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

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24 IRF

JANTXV2N6796U

 100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package

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21 ETC
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