JANTXV2N7228U [INFINEON]

POWER MOSFET SURFACE MOUNT(SMD-1); 功率MOSFET表面贴装（ SMD - 1 ）


型号：	JANTXV2N7228U
厂家：	Infineon
描述：	POWER MOSFET SURFACE MOUNT(SMD-1) 功率MOSFET表面贴装（ SMD - 1 ）晶体晶体管功率场效应晶体管开关脉冲
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PD - 90418C

IRFN450

JANTX2N7228U

JANTXV2N7228U

POWER MOSFET

SURFACE MOUNT(SMD-1)

REF:MIL-PRF-19500/592

500V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFN450

0.415 Ω

12A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

8.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

1.2

±20

750

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

Package Mounting Surface Temperature

Weight

^oC

STG

300(for 5 seconds)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

1/25/01

IRFN450

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

500

—

= 0V, I = 1.0mA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.68

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

6.5

—

0.415

0.515

4.0

= 10V, I = 8.0A

DS(on)

GS D

➀

Ω

= 10V, I = 12A

= V , I = 250µA

GS(th)

Ω

—

S ( )

> 15V, I

= 8.0A ➀

250

= 400V ,V =0V

DSS

DS GS

µA

—

= 400V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

100

-100

120

= 20V

= -20V

GSS

=10V, I = 12A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

=250V

= 250V, I = 12A,

190

170

130

—

=10V, R = 2.35Ω

d(off)

Measured from the center of drain

pad to center of source pad.

+ L

Total Inductance

Input Capacitance

—

2700

600

240

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

1.7

T = 25°C, I = 12A, V

= 0V ➀

Reverse Recovery Time

1600 nS

14 µC

T = 25°C, I = 12A, di/dt ≤ 100A/µs

Reverse Recovery Charge

≤ 30V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

0.83

—

thJC

°C/W

Junction-to-PC board

3.0

Soldered to a copper-clad PC board

thJ-PCB

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFN450

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFN450

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFN450

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFN450

15V

DRIVER

D S

D.U .T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFN450

Footnotes:

➀➀ I

≤ 12A, di/dt ≤ 130A/µs,

➀➀ Repetitive Rating; Pulse width limited by

≤ 500V, T ≤ 150°C

maximum junction temperature.

➀➀➀V

= 25V, starting T = 25°C, L= 10.4mH

Peak I = 12A, V

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 10V

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

1- DRAIN

2- GATE

3- SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

www.irf.com

JANTXV2N7228U [INFINEON]

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