JANTXV2N7336 [INFINEON]
POWER MOSFET THRU-HOLE (MO-036AB); 功率MOSFET直通孔（ MO- 036AB ）
| 型号： | JANTXV2N7336 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET THRU-HOLE (MO-036AB) |
| 文件： | 总12页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90436F
IRFG6110
JANTX2N7336
JANTXV2N7336
REF:MIL-PRF-19500/598
100V, Combination 2N-2P-CHANNEL
HEXFET® MOSFETTECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRFG6110
IRFG6110
RDS(on)
0.7Ω
ID
CHANNEL
1.0A
-0.75A
N
P
1.4Ω
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
=± 10V, T = 25°C Continuous Drain Current
C
=± 10V, T = 100°C Continuous Drain Current
N-Channel
1.0
P-Channel
-0.75
-0.5
Units
I
@ V
@ V
D
GS
A
I
0.6
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
4.0
-3.0
DM
@ T = 25°C
P
1.4
1.4
W
W/°C
V
D
C
0.011
±20
0.011
±20
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
GS
E
75 ➀
—
75➀➀
—
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
—
—
mJ
V/ns
AR
dv/dt
5.5 ➀
-5.5 ➀
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/16/02
IRFG6110
Electrical Characteristics For Each N-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
—
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.13
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.7
0.8
V
V
= 10V, I = 0.6A
➀
D
DS(on)
GS
GS
Ω
= 10V, I = 1.0A
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
0.86
—
4.0
—
V
Ω
V
DS
= V , I = 250µA
GS(th)
fs
GS
D
g
S ( )
V
> 15V, I
= 0.6A ➀
DS
V
DS
I
25
= 80V, V = 0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T =125°C
V
V
GS
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
15
7.5
7.5
20
V
GS
= 20V
GSS
GSS
nA
nC
V
= -20V
GS
Q
Q
Q
=10V, I = 1.0A,
g
gs
gd
d(on)
r
D
V
DS
= 50V
t
t
t
t
V
DD
= 50V, I = 1.0A,
D
25
V
=10V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
FallTime
Total Inductance
40
d(off)
40
—
f
L
S
+ L
nH
D
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
C
Input Capacitance
—
—
—
180
82
—
—
—
V
GS
= 0V, V
= 25V
f = 1.0MHz
iss
DS
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
15
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.0
4.0
1.5
200
S
A
SM
SD
V
T = 25°C, I = 1.0A, V
= 0V ➀
j
S
GS
Reverse Recovery Time
nS
T = 25°C, I = 1.0A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
0.83 nC
V
≤ 50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFG6110
Electrical Characteristics For Each P-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
DSS
GS D
∆BV
/∆T Temperature Coefficient of Breakdown
-0.098
V/°C Reference to 25°C, I = -1.0mA
D
DSS
J
Voltage
➀
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
0.67
—
—
—
—
—
—
—
1.4
1.73
-4.0
—
V
= -10V, I = -0.5A
DS(on)
GS D
Ω
V
GS
= -10V, I =- 0.75A
D
V
V
V
DS
= V , I = -250µA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -0.5A ➀
DS
V
DS
I
-25
-250
= -80V, V = 0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
nA
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
15
V
= - 20V
GSS
GSS
GS
V
GS
= 20V
Q
Q
Q
V
= -10V, I = -0.75A,
g
gs
gd
d(on)
r
GS D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
7.0
8.0
30
nC
ns
V
= -50V
DS
t
t
t
t
V
DD
= -50V, I = -0.75A,
D
60
40
V
= -10V, R = 7.5Ω
GS G
d(off)
f
40
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
L
S
+ L
Total Inductance
—
D
nH
pF
.
C
Input Capacitance
—
—
—
200
85
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
30
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-0.75
-3.0
-5.5
200
9.0
S
SM
A
V
V
T = 25°C, I = -0.75A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = -0.75A, di/dt ≤ -100A/µs
j
rr
RR
F
V
≤ -50V
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
For footnotes refer to the last page
www.irf.com
3
IRFG6110
N-Channel
Q1,Q3
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
www.irf.com
IRFG6110
N-Channel
Q1,Q3
13a&b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
www.irf.com
5
IRFG6110
N-Channel
Q1,Q3
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
t
t
f
d(on)
r
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
www.irf.com
IRFG6110
N-Channel
Q1,Q3
15V
DRIVER
L
V
D S
D.U .T
R
.
G
+
-
V
D D
I
A
AS
10V
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
10V
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
10V
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRFG6110
P-Channel
Q2,Q4
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Fig 17. Normalized On-Resistance
Fig 16. Typical Transfer Characteristics
Vs.Temperature
8
www.irf.com
IRFG6110
P-Channel
Q2,Q4
26
Fig 19. Typical Gate Charge Vs.
Fig 18. Typical Capacitance
Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 20. Typical Source-Drain Diode
Fig 21. Maximum Safe Operating
ForwardVoltage
Area
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9
IRFG6110
P-Channel
Q2,Q4
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig22. Maximum Drain Current Vs.
CaseTemperature
Fig 23b. Switching Time Waveforms
Fig24. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
10
www.irf.com
IRFG6110
P-Channel
Q2,Q4
L
V
DS
D.U.T
R
.
G
V
DD
I
A
AS
DRIVER
--2100VV
0.01
t
Ω
p
15V
Fig 25a. Unclamped Inductive Test Circuit
I
AS
Fig 25c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig25b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-10V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 26b. Gate Charge Test Circuit
Fig 26a. Basic Gate Charge Waveform
www.irf.com
11
IRFG6110
Footnotes:
➀➀ Repetitive Rating; Pulse width limited by
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀V = - 25V, starting T = 25°C, L= 266mH,
maximum junction temperature.
➀➀➀V
= 25V, starting T = 25°C, L= 150mH,
J
DD
Peak I = - 0.75A, V
J
DD
Peak I = 1.0A, V
= -10V
= 10V
L
GS
L
GS
➀ I
≤ - 0.75A, di/dt ≤ - 75A/µs,
≤ -100V, T ≤ 150°C
➀➀ I
SD
≤ 1.0A, di/dt ≤ 75A/µs,
SD
V
V
≤ 100V, T ≤ 150°C
DD
J
DD
J
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice.0402
12
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