JANTXVF2N7423 [INFINEON]
Transistor;
| 型号： | JANTXVF2N7423 |
| 厂家： | 
Infineon |
| 描述： | Transistor 局域网 脉冲 晶体管 |
| 文件： | 总22页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 10 February 2014.
INCH-POUND
MIL-PRF-19500/662F
10 December 2013
SUPERSEDING
MIL-PRF-19500/662E
11 March 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED
P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U,
JANTXVR AND F AND JANSR AND F
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type
as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
See 6.5 for JANHC and JANKC die versions.
1.2 Physical dimensions. See figure 1, (TO-254AA), and figure 2, (surface mount, TO-276AB).
1.3 Maximum ratings. Unless otherwise specified, TA = +25oC.
Type
(1)
PT (2)
TC =
PT
VDS
VDG
VGS ID1 (4) (5) ID2 (4) (5)
IS
IDM
(6)
TJ
and
TSTG
R θ
(3)
JC
TA =
TC =
TC =
+25oC
+25oC
+100oC
+25oC
A dc
W
W
V dc
V dc V dc
A dc
-14.0
-9.0
A dc A (pk)
oC
°C/W
2N7422
2N7423
150
150
4.0
4.0
0.83 -100
0.83 -200
-100
-200
-22.0
-14.0
-22.0
-14.0
-88
-56
-55 to
+150
±20
±20
(1) Unless otherwise noted, electrical characteristics, ratings, and conditions for "U" suffix devices (surface mount)
are identical to the corresponding non-"U" suffix devices.
(2) Derate linearly by 1.2 W/°C for TC > +25°C.
(3) See figure 3, thermal impedance curves.
(4) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal
construction.
-
TJM TC
( on ) at
TJM
=
ID
x
RθJC
RDS
(5) See figure 4, maximum drain current graphs.
(6) IDM = 4 X ID1 as calculated in note (4).
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/662F
1.4 Primary electrical characteristics at TC = +25°C.
Type
(1)
Min V(BR)DSS
VGS = 0
ID = -1.0 mA
dc
VGS(TH)1
VDS ≥ VGS
ID = -1.0 mA
dc
Max IDSS1
Max rDS(on) (2)
EAS
IAS
VGS = 0
VDS = 80
percent of
rated VDS
VGS = -12V
ID = ID2
at
ID1
TJ = 25oC
TJ = 150oC
V dc
V dc
mJ
A
µA dc
Ω
Ω
Min
-2.0
Max
-4.0
2N7422
2N7423
-100
-200
500
500
-22
-14
-25
-25
0.080
0.315
0.200
0.708
-2.0
-4.0
(1) Unless otherwise noted, electrical characteristics, ratings, and conditions for “U” suffix devices (surface mount)
are identical to the corresponding non-"U" suffix devices.
(2) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
* (Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil/ or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/662F
Dimensions
Ltr
Inches
Millimeters
Min
.535
.249
.035
.510
Max
Min
Max
13.84
6.60
BL
CH
.545
.260
.045
.570
13.59
6.32
LD
0.89
1.14
LL
12.95
14.48
LO
.150 BSC
.150 BSC
3.81 BSC
3.81 BSC
3.53
LS
MHD
MHO
TL
.139
.149
.685
.800
.050
.545
3.78
17.40
20.32
1.27
.665
.790
.040
.535
16.89
20.07
1.02
TT
TW
13.59
13.84
Term 1
Term 2
Term 3
Drain
Source
Gate
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
4. All terminals are isolated from case.
FIGURE 1. Physical dimensions for TO-254AA.
3
MIL-PRF-19500/662F
Dimensions
Inches
Symbol
Millimeters
Min
.620
.445
Max
.630
.455
.142
.020
.420
Min
15.75
11.30
Max
16.00
11.56
3.61
0.51
10.67
BL
BW
CH
LH
.010
.410
0.25
10.41
LL1
LL2
LS1
LS2
LW1
LW2
Q1
.152
.162
3.86
4.11
.210 BSC
.105 BSC
.370
5.33 BSC
2.67 BSC
.380
.145
9.40
3.43
0.76
0.89
9.65
3.68
.135
.030
.035
Q2
Term 1
Term 2
Term 3
Drain
Gate
Source
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The lid shall be electrically isolated from the drain, gate, and source.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Dimensions and configuration of surface mount package outline, TO-276AB.
4
MIL-PRF-19500/662F
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows:
IAS ........ Rated avalanche current, nonrepetitive
nC ........ nano Coulomb.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1 and 2 herein. Methods used for electrical isolation of the terminals shall employ
materials that contain a minimum of 90 percent Al2O3 (ceramic). Examples of such construction techniques are
metallized ceramic eyelets, or ceramic walled packages.
3.4.1 Lead material and finish. Lead material shall be kovar or Alloy 52; a copper core or plated core is permitted.
Surface mount terminals shall be copper tungsten. Lead finish shall be solderable as defined in MIL-PRF-19500,
MIL-STD-750, and herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition
document (see 6.2).
3.4.2 Internal construction: Multiple chip construction shall not be permitted to meet the requirements of this
specification.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of
the country of origin may be omitted from the body of the transistor but shall be retained on the initial container.
3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. However, the following handling practices are recommended (see 3.6).
a. Devices should be handled on benches with conductive handling devices.
b. Ground test equipment, tools, and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f. Maintain relative humidity above 50 percent if practical.
g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to
any lead.
h. Gate must be terminated to source, R ≤ or 100 kΩ, whenever bias voltage is applied drain to source.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
5
MIL-PRF-19500/662F
3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design
changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall
provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the
device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II.
SEE characterization data shall be made available upon request of the qualifying or acquiring activity.
6
MIL-PRF-19500/662F
* 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
of MIL-PRF-19500)
JANS
JANTXV
(1) (2)
(3)
(3)
Gate stress test (see 4.3.1)
Gate stress test (see 4.3.1)
Method 3470 of MIL-STD-750, EAS test
(see 4.3.2)
Method 3470 of MIL-STD-750, EAS test
(see 4.3.2)
(3) 3c
9
Method 3161 of MIL-STD-750, thermal
impedance (see 4.3.3)
Method 3161 of MIL-STD-750, thermal
impedance (see 4.3.3)
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
herein
Not applicable
10
Method 1042 of MIL-STD-750, test
condition B
Method 1042 of MIL-STD-750, test
condition B
11
IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1
Subgroup 2 of table I herein.
,
IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1
Subgroup 2 of table I herein.
,
∆IGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IDSS1 = ±10 µA dc or ±100 percent of initial
value, whichever is greater.
12
13
Method 1042 of MIL-STD-750, test
condition A
Method 1042 of MIL-STD-750, test
condition A
Subgroups 2 and 3 of table I herein.
Subgroups 2 of table I herein.
∆IGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
∆IDSS1 = ±10 µA dc or ±100 percent of initial ∆IDSS1 = ±10 µA dc or ±100 percent of
value, whichever is greater.
initial value, whichever is greater.
∆rDS(ON)1 = ±20 percent of initial value.
∆VGS(TH)1 = ±20 percent of initial value.
∆rDS(ON)1 = ±20 percent of initial value.
∆VGS(TH)1 = ±20 percent of initial value.
17
For TO-254AA packages: Method 1081 of For TO-254AA packages: Method 1081 of
MIL-STD-750 (see 4.3.4), Endpoints:
Subgroup 2 of table I herein.
MIL-STD-750 (see 4.3.4), Endpoints:
Subgroup 2 of table I herein.
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be
repeated in screening requirements.
7
MIL-PRF-19500/662F
4.3.1 Gate stress test. Apply VGS = -30 V minimum for t = 250 µs minimum.
4.3.2 Single pulse avalanche energy (EAS).
a. Peak current, IAS = ID1
b. Inductance, L = (2*EAS/(ID1)2)*((VBR-VDD)/VBR) mH minimum.
c. Gate to source resistor, RGS: 25 ≤ RGS ≤ 200 Ω.
d. Supply voltage, VDD = -25 V dc, except VDD = -50 V dc for 2N7423.
e. Initial case temperature, TC = +25° C, -5° C, +10 °C.
f. Gate voltage, VGS = -12 V dc.
g. Number of pulses to be applied: 1 pulse minimum.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
* 4.3.4 Dielectric withstanding voltage.
a. Magnitude of test voltage…………………….………..900 V dc.
b. Duration of application of test voltage………………..15 seconds (min).
c. Points of application of test voltage…………………...All leads to case (bunch connection).
d. Method of connection…………………………………...Mechanical.
e. Kilovolt-ampere rating of high voltage source………..1,200 V/1.0 mA (min).
f. Maximum leakage current……………………………...1.0 mA.
g. Voltage ramp up time..................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500 and as follows. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
8
MIL-PRF-19500/662F
* 4.4.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
1051
2075
2077
1042
Condition
B3
B3
B3
B4
Test condition G, 100 cycles.
See 3.4.2.
SEM qualification may be performed anytime prior to lot formation.
*
Intermittent operation life, condition D. No heat sink or forced-air cooling on
the device shall be permitted during the on cycle; ton = 30 seconds minimum.
B5
B5
1042
1042
Accelerated steady-state gate bias, condition B, VGS = rated;
TA = +175°C, t = 24 hours minimum, or TA = +150°C, t = 48 hours minimum.
Accelerated steady-state reverse bias, condition A, VDS = rated;
TA = +175°C, t = 120 hours minimum; or TA = +150°C, t = 240 hours
minimum.
B5
2037
Bond strength, test condition D.
* 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500.
Subgroup
B2
Method
1051
Condition
Test condition G, 25 cycles.
*
B3
1042
Intermittent operation life, condition D. No heat sink or forced-air cooling on
the device shall be permitted during the on cycle; ton = 30 seconds minimum.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
Subgroup
C2
Method
2036
Condition
Test condition A; weight = 10 pounds; t = 15 seconds
(applicable to TO-254AA only).
C5
C6
3161
1042
See 4.3.3, R θJC = 0.83 °C/W.
*
Intermittent operation life, condition D. No heat sink or forced-air cooling on
the device shall be permitted during the on cycle; ton = 30 seconds minimum.
4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of
MIL-PRF-19500 and table II herein.
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
9
MIL-PRF-19500/662F
TABLE I. Group A inspection
MIL-STD-750
Condition
Limits
Inspection 1/
Subgroup 1
Symbol
Unit
Method
2071
Min
Max
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
3161
3407
See 4.3.3
Z θ
°C/W
JC
Breakdown voltage
drain to source
Bias condition C, VGS = 0 V,
ID = -1 mA dc,
V (BR)DSS
2N7422, 2N7422U
2N7423, 2N7423U
-100
-200
V dc
V dc
Gate to source
voltage (threshold)
3403
3411
3411
3413
3421
VGS(TH)1
IGSSF1
IGSSR1
IDSS1
-2.0
-4.0
-100
100
-25
V dc
nA dc
nA dc
µA dc
VDS ≥ VGS
,
ID = -1 mA dc
Gate current
Gate current
Drain current
Bias condition C, VGS = -20 V dc,
VDS = 0 V
Bias condition C, VGS = 20 V dc,
VDS = 0 V
Bias condition C, VGS = 0 V dc,
VDS = 80 percent of rated VDS
,
Static drain to source
on-state resistance
2N7422, 2N7422U
VGS = -12 V dc, condition A,
pulsed (see 4.5.1), ID = ID2
rDS(ON)1
0.080
0.315
Ω
Ω
2N7423, 2N7423U
Static drain to source
on-state resistance
2N7422, 2N7422U
3421
4011
VGS = -12 V dc, condition A,
pulsed (see 4.5.1), ID = ID1
rDS(ON)2
0.085
0.330
Ω
Ω
2N7423, 2N7423U
Forward voltage
VGS = 0 V dc, condition A, pulsed
(see 4.5.1), ID = ID1
VSD
2N7422, 2N7422U
2N7423, 2N7423U
-3.0
-3.6
V dc
V dc
See footnotes at end of table.
10
MIL-PRF-19500/662F
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Min
Inspection 1/
Subgroup 3
Symbol
Unit
Method
Condition
Max
High temperature
operation:
TC = TJ = +125°C
Gate current
Gate current
Drain current
3411
3411
3413
3421
Bias condition C, VGS = -20 V dc,
VDS = 0 V
IGSSF2
IGSSR2
IDSS2
-200
200
nA dc
nA dc
mA dc
Bias condition C, VGS = 20 V dc,
VDS = 0 V
Bias condition C, VGS = 0 V dc,
VDS = 80 percent of rated VDS
-0.25
Static drain to source
on-state resistance
2N7422, 2N7422U
VGS = -12 V dc, condition A,
pulsed (see 4.5.1), ID = ID2
rDS(ON)3
0.170
0.669
Ω
Ω
2N7423, 2N7423U
Gate to source voltage
(threshold)
3403
VGS(TH)2
-1.0
V dc
VDS ≥ VGS, ID = -1 mA dc
TC = TJ = -55°C
Low temperature
operation:
Gate to source voltage
(threshold)
3403
3475
VGS(TH)3
-5.0
V dc
VDS ≥ VGS, ID = -1 mA dc
Subgroup 4
Forward
transconductance
2N7422, 2N7422U
ID = ID2, VDD > -15 V dc,
see 4.5.1
gfs
11.0
4.0
S
S
2N7423, 2N7423U
Switching time tests
3472
ID = ID1, VGS = -12 V dc,
RG = 2.35 Ω, VDD = 50 percent of
rated VDS
Turn-on delay time
2N7422, 2N7422U
tD(on)
40
60
ns
ns
2N7423, 2N7423U
Rise time
tr
2N7422, 2N7422U
2N7423, 2N7423U
170
240
ns
ns
See footnotes at end of table.
11
MIL-PRF-19500/662F
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Condition
Min
Max
Subgroup 4- Continued
Turn-off delay time
2N7422, 2N7422U
tD(off)
190
225
ns
ns
2N7423, 2N7423U
Fall time
tf
2N7422, 2N7422U
2N7423, 2N7423U
190
220
ns
ns
Subgroup 5
Safe operating area
test (high voltage)
3474
See figures 5 and 6
tp = 10 ms min. VDS = 80 percent
of max. rated VDS
Electrical measurements
Subgroup 6
See table I, subgroup 2
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
2N7422, 2N7422U
QG(ON)
QGS
QGD
trr
200
200
nC
nC
2N7423, 2N7423U
Gate to source charge
2N7422, 2N7422U
35
45
nC
nC
2N7423, 2N7423U
Gate to drain charge
2N7422, 2N7422U
48
85
nC
nC
2N7423, 2N7423U
Reverse recovery time
3473
di/dt = -100 A/µs, VDD ≤ -50 V
ID = ID1
2N7422, 2N7422U
2N7423, 2N7423U
300
775
ns
ns
1/ For sampling plan, see MIL-PRF-19500.
2/ This test required for the following end-point measurements only:
Group B, subgroups 2 and 3 (JANTXV).
Group B, subgroups 3 and 4 (JANS).
Group C, subgroup 2 and 6.
Group E, subgroup 1.
12
MIL-PRF-19500/662F
TABLE II. Group D inspection.
Pre-irradiation
MIL-STD-750
Conditions
Post-irradiation limits
R F 5/
Inspection
1/ 2/ 3/ 4/
Symbol
limits
Unit
R and F
Method
Min
Max
Min
Max
Min
Max
Subgroup 1
Not applicable
Subgroup 2
TC = + 25°C
Steady-state
total dose
irradiation
1019
1019
VGS = -12 V;
VDS = 0 V
(VGS bias) 6/
Steady-state
total dose
irradiation
VGS = 0 V;
VDS = 80 percent
of rated VDS
(pre-irradiation)
(VDS bias) 6/
End-point
electricals:
Breakdown
voltage,
drain to
3407
3403
VGS = 0 V;
ID = -1 mA;
bias condition C
V(BR)DSS
source
2N7422
-100
-200
-100
-200
-100
V dc
2N7423
-200
V dc
Gate to source
voltage
VDS ≥ VGS
;
VGS(th)1
ID = -1 mA
(threshold)
2N7422
2N7423
-2.0
-2.0
-4.0
-4.0
-2.0
-2.0
-4.0
-4.0
-2.0
-2.0
-5.0
V dc
V dc
-5.0
Gate current
Gate current
Drain current
3411
3411
3413
Bias condition C;
VGS = -20 V;
IGSSF1
IGSSR1
IDSS
-100
100
-25
-100
100
-25
-100
nA dc
nA dc
µA dc
V
DS = 0 V
Bias condition C;
VGS = +20 V;
100
-25
V
DS = 0 V
Bias condition C;
VGS = 0 V;
V
DS = 80 percent
of rated VDS
(pre-irradiation)
See footnotes at end of table.
13
MIL-PRF-19500/662F
TABLE II. Group D inspection - Continued.
Pre-irradiation
MIL-STD-750
Conditions
Inspection
1/ 2/ 3/ 4/
Symbol
limits
Post-irradiation limits
F 5/
Unit
R and F
Min Max
R
Method
Min
Max
Min
Max
Subgroup 2
- Continued
TC = + 25°C
Static drain to
source on-
3405
Condition A;
VGS = -12 V;
VDS(on)
state voltage
ID = ID2
;
pulsed
(see 4.5.1)
2N7422
2N7423
-1.12
-1.12
-1.12
V dc
-2.835
-2.835
-2.835
V dc
Forward
voltage
4011
Bias condition C;
VGS = 0 V;
VSD
source drain
diode
ID = ID1
2N7422
2N7423
-3.0
-3.6
-3.0
-3.6
-3.0
-3.6
V dc
V dc
1/ For sampling plan see MIL-PRF-19500.
2/ Group D qualification may be performed prior to lot formation. Wafers qualified to these group D QCI
requirements may be used for any other specification utilizing the same die design.
3/ At the manufacturer’s option, group D samples need not be subjected to the screening tests, and may be
assembled in its qualified package or in any qualified package that the manufacturer has data to correlate the
performance to the designated package.
4/ Unless otherwise noted, electrical characteristics, ratings, and conditions for “U” suffix devices (surface
mount) are identical to the corresponding non-”U” suffix devices.
5/ The “F” designation represents devices which pass end-points at both R and F designated Total-Ionizing-
Dose (TID).
6/ Separate samples shall be pulled for each bias.
14
MIL-PRF-19500/662F
TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.
MIL-STD-750
Inspection
Sample plan
Method
Conditions
Subgroup 1
Temperature cycle
45 devices
c = 0
1051
1071
Condition G, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2 1/
See table I, subgroup 2
45 devices
c = 0
Steady-state gate bias
Electrical measurements
Steady-state reverse bias
Electrical measurements
Subgroup 4
1042
1042
Condition B, 1,000 hours
See table I, subgroup 2
Condition A, 1,000 hours
See table I, subgroup 2
Sample size
N/A
Thermal impedance curves
Subgroup 10
See MIL-PRF-19500.
22 devices
c = 0
Commutating diode for safe
operating area test procedure for
measuring dv/dt during reverse
recovery of power MOSFET
transistors or insulated gate bipolar
transistors
3476
Test conditions shall be derived by the
manufacturer
Subgroup 11
SEE 2/ 3/
3 devices
1080
See MIL-STD-750 method 1080 and 6.2.
1/ A separate sample for each test shall be pulled.
2/ Group E qualification of SEE effect testing may be performed prior to lot formation. Qualification may be
extended to other specification sheets utilizing the same structurally identical die design.
3/ Device qualification to a higher level LET is sufficient to qualify all lower level LETs.
15
MIL-PRF-19500/662F
2N7422, 2N7422U, 2N7423, and 2N7423U
FIGURE 3. Thermal impedance curve.
16
MIL-PRF-19500/662F
2N7422, 2N7422U
2N7423, 2N7423U
FIGURE 4. Maximum drain current versus case temperature graphs.
17
MIL-PRF-19500/662F
FIGURE 5. Safe operating area graph (2N7422, 2N7422U).
18
MIL-PRF-19500/662F
FIGURE 6. Safe operating area graph (2N7423, 2N7423U).
19
MIL-PRF-19500/662F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
e. For acquisition of RHA designated devices, table II, subgroup 1 testing of group D herein is optional.
If subgroup 1 is desired, it should be specified in the contract.
f. If specific SEE characterization conditions are desired (see section 6.6 and table IV), manufacturer’s cage
code should be specified in the contract or order.
g. If SEE testing data is desired, it should be specified in the contract or order.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil.
20
MIL-PRF-19500/662F
6.4 Cross-reference list. The following table shows the generic P/N and its associated military P/N (without JAN
and RHA prefix).
Commercial types (1)
Preferred types
“U”
TO-254AA
2N7422
2N7423
IRHM9_150
IRHM9_250
IRHN9_150
IRHN9_250
(1) IRH9_: 100 K Rad (Si)
IRH93: 300 K Rad (Si)
6.5 JANC die versions. The JANHC and JANKC die versions of these devices are covered under specification
sheet MIL-PRF-19500/657.
6.6 Application data.
6.6.1 Manufacturer specific irradiation data. Each manufacturer qualified to this slash sheet has characterized its
devices to the requirements of MIL-STD-750 method 1080 and as specified herein. Since each manufacturer’s
characterization conditions can be different and can vary by the version of method 1080 qualified to, the
MIL-STD-750 method 1080 revision version date and conditions used by each manufacturer for characterization have
been listed here (see table IV) for information only. SEE conditions and figures listed in section 6 are current as of
the date of this specification sheet, please contact the manufacturer for the most recent conditions.
TABLE IV. Manufacturers characterization conditions.
MIL-STD-750
Conditions
Sample
plan
Manufactures
cage
Inspection
Method
1080
No
SEE 1/
See MIL-STD-750E method 1080
IGSSF1, IGSSR1, and IDSS1 in accordance with table I, subgroup 2
manufacturers
are currently Electrical
qualified to the measurements
SEE
3 devices
requirements
Electrical
IGSSF1, IGSSR1, and IDSS1 in accordance with table I, subgroup 2
measurements
Upon qualification, all manufacturers will provide the verification test conditions to be added to this table.
1/ IGSSF1, IGSSR1, and IDSS1 was examined before and following SEE irradiation to determine acceptability for each
bias condition. Other test conditions in accordance with table I, subgroup 2, may be performed at the
manufacturer’s option.
21
MIL-PRF-19500/662F
6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2013-115)
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil/.
22
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