LA5416-AWCW [INFINEON]

Visible LED, Transparent;
LA5416-AWCW
型号: LA5416-AWCW
厂家: Infineon    Infineon
描述:

Visible LED, Transparent

文件: 总9页 (文件大小:91K)
中文:  中文翻译
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Hyper 5 mm (T1 ¾) LED, Non Diffused  
Hyper-Bright LED  
LS 5426, LO 5426, LY 5426, LA 5416  
Besondere Merkmale  
Features  
Gehäusetyp: klares 5 mm (T1 ¾) Gehäuse;  
eingefärbt (super-rot, orange, gelb),  
farblos (amber)  
Besonderheit des Bauteils: enge  
Abstrahlcharakteristik  
Wellenlänge: 632 nm (super-rot),  
615 nm (amber), 605 nm (orange),  
587 nm (gelb)  
package: clear 5 mm (T1 ¾) package; colored  
(super-red, orange, yellow), colorless (amber)  
feature of the device: narrow viewing angle  
wavelength: 632 nm (super-red),  
615 nm (amber), 605 nm (orange),  
587 nm (yellow)  
viewing angle: 16°  
technology: InGaAlP  
Abstrahlwinkel: 16°  
Technologie: InGaAlP  
optical efficiency: 11 lm/W (yellow, orange,  
amber), 7 lm/W (super-red)  
optischer Wirkungsgrad: 11 lm/W (gelb,  
orange, amber), 7 lm/W (super-rot)  
Gruppierungsparameter: Lichtstärke  
Lötmethode: Wellenlöten (TTW)  
Verpackung: Schüttgut, gegurtet lieferbar  
grouping parameter: luminous intensity  
soldering methods: TTW soldering  
packing: bulk, available taped on reel  
Anwendungen  
Applications  
• optischer Indikator  
• optical indicators  
• Ampelanwendung  
• traffic lights  
• Verkehrsinformationssysteme  
• Innenbeleuchtung im Automobilbereich  
(z.B. Instrumentenbeleuchtung, u.ä.)  
• Ersatz von Kleinst-Glühlampen  
• Markierungsbeleuchtung (z.B. Stufen,  
Fluchtwege, u.ä.)  
• Signal- und Symbolleuchten  
• Hinterleuchtung (Tasten, Displays,  
Werbebeleuchtung, Allgemeinbeleuchtung)  
• traffic information displays  
• interior automotive lighting (e.g. dashboard  
backlighting, etc.)  
• substitution of micro incandescent lamps  
• marker lights (e.g. steps, exit ways, etc.)  
• signal and symbol luminaire  
• backlighting (keys, displays, illuminated  
advertising, general lighting)  
2000-03-01  
1
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Typ  
Emissions-  
farbe  
Color of  
Emission  
Gehäuse-  
farbe  
Color of  
Package  
Lichtstärke  
Lichtstrom  
Bestellnummer  
Ordering Code  
Type  
Luminous  
Intensity  
IF = 20 mA  
IV (mcd)  
Luminous  
Flux  
IF = 20 mA  
ΦV (mlm)  
LS 5426-TV  
LS 5426-VBW  
LS 5426-T  
LS 5426-U  
LS 5426-V  
super-red  
red clear  
280 ... 1120 240 (typ.)  
710 ... 2800 380 (typ.)  
280 ... 450 180 (typ.)  
450 ... 710 240 (typ.)  
710 ... 1120 300 (typ.)  
1120 ... 1800 380 (typ.)  
1800 ... 2800 450 (typ.)  
on request  
on request  
LS 5426-AW  
LS 5426-BW  
LO 5426-VAW orange  
LO 5426-AWCW  
LO 5426-U  
LO 5426-V  
LO 5426-AW  
orange clear  
yellow clear  
colorless clear  
710 ... 1800 380 (typ.)  
1120 ... 4500 580 (typ.)  
450 ... 710 300 (typ.)  
710 ... 1120 380 (typ.)  
1120 ... 1800 450 (typ.)  
1800 ... 2800 580 (typ.)  
2800 ... 4500 700 (typ.)  
on request  
on request  
LO 5426-BW  
LO 5426-CW  
LY 5426-VAW  
LY 5426-AWCW  
LY 5426-U  
yellow  
amber  
710 ... 1800 380 (typ.)  
1120 ... 4500 580 (typ.)  
450 ... 710 300 (typ.)  
710 ... 1120 380 (typ.)  
1120 ... 1800 450 (typ.)  
1800 ... 2800 580 (typ.)  
2800 ... 4500 700 (typ.)  
on request  
on request  
LY 5426-V  
LY 5426-AW  
LY 5426-BW  
LY 5426-CW  
LA 5416-VAW  
LA 5416-AWCW  
LA 5416-U  
710 ... 1800 380 (typ.)  
1120 ... 4500 580 (typ.)  
450 ... 710 300 (typ.)  
710 ... 1120 380 (typ.)  
1120 ... 1800 450 (typ.)  
1800 ... 2800 580 (typ.)  
2800 ... 4500 700 (typ.)  
on request  
on request  
LA 5416-V  
LA 5416-AW  
LA 5416-BW  
LA 5416-CW  
Helligkeitswerte werden mit einer Stromeinprägedauer von 25 ms und einer Genauigkeit von ±11 %  
ermittelt.  
Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ±11 %.  
2000-03-01  
2
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS, LO, LA LY  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 55 … + 100  
°C  
°C  
°C  
mA  
A
Lagertemperatur  
Storage temperature range  
– 55 … + 100  
+ 100  
Sperrschichttemperatur  
Junction temperature  
Durchlaßstrom  
Forward current  
IF  
30  
Stoßstrom  
IFM  
1
0.2  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
3
V
Leistungsaufnahme  
Power dissipation  
TA 25 °C  
Ptot  
80  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht/Umgebung  
Junction/ambient  
Sperrschicht/Lötpad  
Rth JA  
Rth JS  
500  
280  
K/W  
K/W  
Junction/solder point  
Montage auf PC-Board FR 4 (Padgröße 16 mm2)  
mounted on PC board FR 4 (pad size 16 mm 2)  
Minimale Beinchenlänge  
Minimum lead length  
2000-03-01  
3
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LA  
LO LY  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 20 mA  
(typ.) λpeak  
645 622 610 591 nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.) ∆λ  
(typ.) 2ϕ  
632 615 605 587 nm  
Spektrale Bandbreite bei 50 % Irel max  
Spectral bandwidth at 50 % Irel max  
IF = 20 mA  
16  
16  
16  
16  
16  
16  
15  
16  
nm  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 20 mA  
(typ.) VF  
(max.) VF  
2.0 2.0 2.0 2.0  
2.5 2.5 2.5 2.5  
V
V
Sperrstrom  
Reverse current  
VR = 3 V  
(typ.) IR  
(max.) IR  
0.01 0.01 0.01 0.01 µA  
10 10 10 10 µA  
Temperaturkoeffizient von λpeak  
Temperature coefficient of λpeak  
IF = 20 mA  
(typ.) TCλpeak  
(typ.) TCλdom  
(typ.) TCV  
0.14 0.13 0.13 0.13 nm/K  
0.01 0.06 0.07 0.10 nm/K  
– 2.0 – 1.8 – 1.7 – 2.5 mV/K  
Temperaturkoeffizient von λdom  
Temperature coefficient of λdom  
IF = 20 mA  
Temperaturkoeffizient von VF  
Temperature coefficient of VF  
IF = 20 mA  
Optischer Wirkungsgrad  
Optical efficiency  
IF = 20 mA  
(typ.) ηopt  
7
11  
11  
11  
lm/W  
2000-03-01  
4
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Relative spektrale Emission Irel = f (λ), TA = 25 °C, IF = 20 mA  
Relative Spectral Emission  
V(λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL00235  
100  
%
Irel  
80  
60  
40  
20  
0
V
λ
yellow  
orange  
amber  
super-red  
400  
450  
500  
550  
600  
650  
nm  
700  
λ
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation Characteristic  
40˚  
30˚  
20˚  
10˚  
0˚  
OHL00493  
1.0  
50˚  
0.8  
0.6  
0.4  
60˚  
70˚  
0.2  
0
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
2000-03-01  
5
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Durchlaßstrom IF = f (VF)  
Forward Current  
TA = 25 °C  
Relative Lichtstärke IV/IV(20 mA) = f (IF)  
Relative Luminous Intensity  
TA = 25 °C  
OHL00233  
10 1  
OHL00232  
102  
mA  
IV  
5
IV (20 mA)  
IF  
10 0  
5
101  
5
10 -1  
5
super-red  
yellow  
100  
5
orange/amber  
10 -2  
5
10 -3  
10-1  
10 -1  
5
10 0  
5
10 1  
mA 10 2  
1
1.4  
1.8  
2.2  
2.6  
3
V 3.4  
IF  
VF  
Maximal zulässiger Durchlaßstrom IF = f (T)  
Max. Permissible Forward Current  
Relative Lichtstärke IV/IV(25 °C) = f (TA)  
Relative Luminous Intensity  
IF = 20 mA  
OHL00238  
OHL01030  
2.0  
35  
IV  
mA  
IV (25 ˚C)  
IF  
30  
1.6  
TA  
TS  
orange  
yellow  
amber  
25  
20  
15  
10  
5
super-red  
1.2  
0.8  
orange  
yellow  
0.4  
amber  
super-red  
TA temp. ambient  
T
S temp. solder point  
0
-20  
0
0
20 40 60  
80 ˚C 100  
0
20  
40  
60  
˚C 100  
T
T
A
2000-03-01  
6
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible Pulse Handling Capability  
Duty cycle D = parameter, TA = 25 °C  
LS, LA, LO  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible Pulse Handling Capability  
Duty cycle D = parameter, TA = 25 °C  
LY  
OHL00318  
OHL00316  
10 1  
10 0  
tp  
A
tp  
A
tp  
IF  
IF  
5
tp  
IF  
D
= T  
IF  
D
= T  
5
T
T
D
=
D
=
0.005  
0.01  
0.02  
0.05  
0.1  
10 0  
5
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
10 -1  
0.2  
0.5  
10 -1  
5
5
0.5  
10 -2  
10 -2  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2  
tp  
tp  
2000-03-01  
7
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Maßzeichnung  
Package Outlines  
Area not flat  
7.8 (0.307)  
5.9 (0.232)  
5.5 (0.217)  
7.5 (0.295)  
1.8 (0.071)  
1.2 (0.047)  
29.0 (1.142)  
27.0 (1.063)  
0.6 (0.024)  
0.4 (0.016)  
Cathode  
9.0 (0.354)  
8.2 (0.323)  
GEXY6713  
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).  
Kathodenkennung:  
Cathode mark:  
kürzerer Lötspieß  
short solder lead  
Gewicht / Approx. weight: 0.35 g  
2000-03-01  
8
OPTO SEMICONDUCTORS  
LS 5426, LO 5426, LY 5426, LA 5416  
Lötbedingungen  
Soldering Conditions  
Wellenlöten (TTW) (nach CECC 00802)  
TTW Soldering  
(acc. to CECC 00802)  
OHLY0598  
300  
C
10 s  
Normalkurve  
standard curve  
250  
200  
150  
100  
50  
T
235 C ... 260 C  
Grenzkurven  
limit curves  
2. Welle  
2. wave  
1. Welle  
1. wave  
ca 200 K/s  
2 K/s  
5 K/s  
100 C ... 130 C  
Zwangskühlung  
2 K/s  
forced cooling  
0
0
50  
100  
150  
200  
s
250  
t
Empfohlenes Lötpaddesign Wellenlöten (TTW)  
Recommended Solder Pad  
TTW Soldering  
4
OHLP0985  
2000-03-01  
9
OPTO SEMICONDUCTORS  

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