LG3380-JL [INFINEON]

3 mm T1 3/4 LED, Diffused Wide-Angle LED; 3毫米T1 3/4 LED ,扩散广角LED
LG3380-JL
型号: LG3380-JL
厂家: Infineon    Infineon
描述:

3 mm T1 3/4 LED, Diffused Wide-Angle LED
3毫米T1 3/4 LED ,扩散广角LED

文件: 总7页 (文件大小:156K)
中文:  中文翻译
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3 mm (T1 3/4 ) LED, Diffused  
Wide-Angle LED  
LS 3380, LY 3380, LG 3380  
Besondere Merkmale  
eingefärbtes, diffuses Gehäuse  
als optischer Indikator einsetzbar  
Lötspieße mit Aufsetzebene  
gegurtet lieferbar  
Störimpulsfest nach DIN 40839  
Features  
colored, diffused package  
for use as optical indicator  
solder leads with stand-off  
available taped on reel  
load dump resistant acc. to DIN 40839  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstärke  
Luminous  
Intensity  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
IF = 10 mA  
IV (mcd)  
LS 3380-GK  
LS 3380-H  
LS 3380-J  
LS 3380-K  
LS 3380-HL  
super-red  
yellow  
red diffused  
1.6 … 12.5  
2.5 … 5.0  
4.0 … 8.0  
6.3 … 12.5  
2.5 … 20.0  
Q62703-Q2629  
Q62703-Q1726  
Q62703-Q1349  
Q62703-Q3824  
Q62703-Q2630  
LY 3380-GK  
LY 3380-H  
LY 3380-J  
LY 3380-K  
LY 3380-HL  
yellow diffused  
green diffused  
1.6 … 12.5  
2.5 … 5.0  
4.0 … 8.0  
6.3 … 12.5  
2.5 … 20.0  
Q62703-Q1352  
Q62703-Q1353  
Q62703-Q1354  
Q62703-Q2317  
Q62703-Q1355  
LG 3380-GK  
LG 3380-J  
LG 3380-K  
LG 3380-JL  
green  
1.6 … 12.5  
4.0 … 8.0  
6.3 … 12.5  
4.0 … 20.0  
Q62703-Q1356  
Q62703-Q2318  
Q62703-Q2631  
Q62703-Q3910  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
1
1998-07-13  
LS 3380, LY 3380, LG 3380  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
T
– 55 … + 100  
°C  
°C  
°C  
mA  
A
op  
Lagertemperatur  
Storage temperature range  
T
stg  
– 55 … + 100  
Sperrschichttemperatur  
Junction temperature  
T
j
+ 100  
40  
Durchlaßstrom  
Forward current  
IF  
Stoßstrom  
IFM  
0.5  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
TA 25 °C  
Ptot  
140  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air  
Rth JA  
400  
K/W  
Semiconductor Group  
2
1998-07-13  
LS 3380, LY 3380, LG 3380  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes(typ.) λpeak  
Wavelength at peak emission(typ.)  
IF = 20 mA  
635  
586  
590  
45  
565  
nm  
Dominantwellenlänge(typ.)  
Dominant wavelength(typ.)  
IF = 20 mA  
λdom  
628  
45  
570  
25  
nm  
Spektrale Bandbreite bei 50 % Irel max(typ.) ∆λ  
Spectral bandwidth at 50 % Irel max(typ.)  
IF = 20 mA  
nm  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
2ϕ  
100  
100  
100  
deg.  
Durchlaßspannung(typ.)  
Forward voltage(max.)  
IF = 10 mA  
VF  
VF  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
V
V
Sperrstrom(typ.)  
Reverse current(max.)  
VR = 5 V  
IR  
IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität(typ.)  
Capacitance  
C0  
12  
10  
15  
pF  
VR = 0 V, ƒ = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %(typ.)  
IV from 90 % to 10 %(typ.)  
IF = 100 mA, tP = 10 µs, RL = 50 Ω  
tr  
tf  
300  
150  
300  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
1998-07-13  
LS 3380, LY 3380, LG 3380  
Relative spektrale Emission Irel = f (λ), TA = 25 °C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
Semiconductor Group  
4
1998-07-13  
LS 3380, LY 3380, LG 3380  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 °C  
Relative Lichtstärke IV/IV(10 mA) = f (IF)  
Relative luminous intensity  
TA = 25 °C  
OHL01263  
OHL01632  
10 2  
10 1  
Ι F  
Ι V  
mA  
Ι V(10mA)  
10 0  
5
10 1  
5
10 -1  
5
10 0  
5
green  
yellow  
super-red  
10 -2  
5
10 -1  
10 -3  
-1  
0
1
2
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
3.4  
V
mA  
10  
5
10  
5
10  
10  
VF  
Ι F  
Zulässige Impulsbelastbarkeit IF = f (tP)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 °C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
Semiconductor Group  
5
1998-07-13  
LS 3380, LY 3380, LG 3380  
Wellenlänge der Strahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 20 mA  
Dominantwellenlänge λdom = f (TA)  
Dominant wavelength  
IF = 20 mA  
OHL01673  
OHL01672  
690  
690  
λ dom  
λ peak  
nm  
nm  
650  
650  
630  
610  
590  
570  
550  
super-red  
super-red  
630  
610  
yellow  
590  
yellow  
green  
green  
570  
550  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 10 mA  
Relative Lichtstärke IV/IV(25 °C) = f (TA)  
Relative luminous intensity  
IF = 10 mA  
OHL01674  
OHL01675  
2.4  
2.0  
Ι V  
Ι V(25 ˚C)  
1.6  
VF  
V
2.2  
2.0  
1.2  
0.8  
0.4  
0.0  
green  
super-red, yellow  
yellow  
green  
1.8  
1.6  
1.4  
super-red  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Semiconductor Group  
6
1998-07-13  
LS 3380, LY 3380, LG 3380  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
4.8  
Area not flat  
4.4  
2.7  
2.1  
3.4  
3.1  
1.8  
1.2  
3.7  
3.5  
0.6  
0.4  
29.0  
27.0  
6.1  
5.7  
Chip position  
Collector/  
Cathode  
GEX06710  
Kathodenkennzeichnung: Kürzerer Lötspieß  
Cathode mark:  
Short solder lead  
Semiconductor Group  
7
1998-07-13  

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