LSC870-J [INFINEON]
Mini SIDELED; 迷你SIDELED型号: | LSC870-J |
厂家: | Infineon |
描述: | Mini SIDELED |
文件: | 总8页 (文件大小:475K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Mini SIDELED®
LS C870, LO C870, LY C870
LG C870, LP C870
Besondere Merkmale
● Gehäusefarbe: weiß
● als optischer Indikator einsetzbar
● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
● für alle SMT-Bestück- und Löttechniken geeignet
● gegurtet (12-mm-Filmgurt)
● Störimpulsfest nach DIN 40839
Features
● color of package: white
● for use as optical indicator
● for backlighting, optical coupling into light pipes and lenses
● suitable for all SMT assembly and soldering methods
● available taped on reel (12 mm tape)
● load dump resistant acc. to DIN 40839
Semiconductor Group
1
11.96
LS C870, LO C870, LY C870
LG C870, LP C870
Typ
Emissions- Farbe der
Lichtstärke Lichtstrom
Bestellnummer
Ordering Code
farbe
Lichtaustritts-
fläche
Type
Color of
Color of the
Luminous
Luminous
Flux
Emission
Light Emitting Intensity
Area
I = 10 mA
F
I = 10 mA
F
IV (mcd)
ΦV (mlm)
LS C870-HL
LS C870-J
LS C870-K
LS C870-L
LS C870-JM
super-red
orange
colorless clear
2.5 ... 20.0
-
Q62703-Q3350
Q62703-Q3351
Q62703-Q3352
Q62703-Q3842
Q62703-Q3353
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0
-
LO C870-HL
LO C870-J
LO C870-K
LO C870-L
LO C870-JM
colorless clear
colorless clear
colorless clear
colorless clear
2.5 ... 20.0
-
Q62703-Q3354
Q62703-Q3355
Q62703-Q3356
Q62703-Q3843
Q62703-Q3357
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0
-
LY C870-HL
LY C870-J
LY C870-K
LY C870-L
LY C870-JM
yellow
2.5 ... 20.0
-
Q62703-Q3358
Q62703-Q3359
Q62703-Q3360
Q62703-Q3845
Q62703-Q3361
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0
-
LG C870-HL
LG C870-J
LG C870-K
LG C870-L
LG C870-JM
green
2.5 ... 20.0
-
Q62703-Q3362
Q62703-Q3363
Q62703-Q3364
Q62703-Q3655
Q62703-Q3365
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0
-
LP C870-FJ
LP C870-G
LP C870-H
LP C870-GK
pure green
1.0 ... 8.0
1.6 ... 3.2 8 (typ.)
2.5 ... 5.0 12 (typ.)
-
Q62703-Q3366
Q62703-Q3367
Q62703-Q3368
Q62703-Q3369
1.6 ... 12.5
-
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
LS C870, LO C870, LY C870
LG C870, LP C870
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
Top
Tstg
Tj
– 55 ... + 100
– 55 ... + 100
+ 100
˚C
˚C
˚C
mA
A
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
IF
30
Stoßstrom
IFM
0.5
Surge current
t ≤ 10 µs, D = 0.005
Sperrspanung
VR
5
V
Reverse voltage
Verlustleistung
Power dissipation
Ptot
100
530
mW
K/W
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*) (Padgröße ≥ 16 mm )
mounted on PC board*) (pad size ≥ 16 mm )
Rth JA
2
2
)
*
PC-board: FR4
Semiconductor Group
3
LS C870, LO C870, LY C870
LG C870, LP C870
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LO LY LG LP
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF =10 mA
(typ.) λpeak
(typ.)
635 610 586 565 557 nm
628 605 590 570 560 nm
Dominantwellenlänge
Dominant wavelength
IF =10 mA
(typ.) λdom
(typ.)
Spektrale Bandbreite bei 50 % Irel max
Spectral bandwidth at 50 % Irel max
IF = 10 mA
(typ.) ∆λ
(typ.)
45
40
45
25
22
nm
Abstrahlwinkel bei 50 % Iv (Vollwinkel)
Viewing angle at 50 % Iv
2ϕ
120 120 120 120 120 Grad
deg.
Durchlaßspannung
Forward voltage
IF = 10 mA
(typ.) VF
(max.) VF
2.0 2.0 2.0 2.0 2.0
2.6 2.6 2.6 2.6 2.6
V
V
Sperrstrom
Reverse current
VR = 5 V
(typ.) IR
(max.) IR
0.01 0.01 0.01 0.01 0.01 µA
10
10
10
10
10
µA
Kapazität
(typ.) C0
12
8
10
15
15
pF
Capacitance
VR = 0 V, f = 1 MHz
Schaltzeiten:
Switching times:
IV from 10 % to 90 %
IV from 90 % to 10 %
IF = 100 mA, tp = 10 µs, RL = 50 Ω
(typ.) tr
(typ.) tf
300 300 300 450 450 ns
150 150 150 200 200 ns
Semiconductor Group
4
LS C870, LO C870, LY C870
LG C870, LP C870
Relative spektrale Emission I = f (λ), TA = 25 ˚C, I = 10 mA
rel
F
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik I = f (ϕ)
rel
Radiation characteristic
Semiconductor Group
5
LS C870, LO C870, LY C870
LG C870, LP C870
Durchlaßstrom I = f (VF)
Relative Lichtstärke IV/IV(10 mA) = f (IF)
F
Forward current
Relative luminous intensity
TA = 25 ˚C
TA = 25 ˚C
Zulässige ImpulsbelastbarkeitI = f (tp)
Permissible pulse handling capability
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
F
Duty cycle D = parameter, TA = 25 ˚C
I = f (TA)
F
Semiconductor Group
6
LS C870, LO C870, LY C870
LG C870, LP C870
Wellenlänge der Strahlung λpeak = f (TA)
Dominantwellenlänge λdom = f (TA)
Wavelength at peak emission
Dominant wavelength
I = 10 mA
F
I = 10 mA
F
Durchlaßspannung VF = f (TA)
Relative Lichtstärke IV / IV(25 ˚C ) = f (TA)
Forward voltage
Relative luminous intensity
I = 10 mA
F
I = 10 mA
F
Semiconductor Group
7
LS C870, LO C870, LY C870
LG C870, LP C870
Maßzeichnung
Package Outlines
(Maße in mm, wenn nicht anders angegeben)
(Dimensions in mm, unless otherwise specified)
Semiconductor Group
8
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