LYK389-FO [INFINEON]

LC ARGUS LED Low current 3 mm T1 LED, Non Diffused; LC ARGUS LED低电流3毫米T1 LED,不扩散
LYK389-FO
型号: LYK389-FO
厂家: Infineon    Infineon
描述:

LC ARGUS LED Low current 3 mm T1 LED, Non Diffused
LC ARGUS LED低电流3毫米T1 LED,不扩散

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LC ARGUS® LED  
LS K389, LY K389, LG K389  
Low current 3 mm (T1) LED, Non Diffused  
Besondere Merkmale  
eingefärbtes, klares Gehäuse  
Kunststoffgehäuse mit spezieller Formgebung  
hohe Lichtstärke bei kleinen Strömen (typ. 2 mA)  
bei Einsatz eines äußeren Reflectors zur Hintergrundbe-  
leuchtung von Leuchtfeldern und LCD-Anzeigen geeignet.  
zur Direkteinkopplung in Lichtleiterflächen geeignet  
gleichmäßige  
Ausleuchtung  
einer  
Streuscheibe  
(Weißdruck) vor dem äußeren Reflektor  
Lötspieße mit Aufsetzebene  
gegurtet lieferbar  
Störimpulsfest nach DIN 40839  
Hinweis: Bei farbigen Streuscheiben muß die spektrale  
Transmission an die, von der LED emittierte Wellenlänge  
angepaßt werden.  
Features  
colored, clear package  
plasic package with a special design  
high light intensity at low currents (typ. 2 mA)  
in connection with an additional, custom built reflector suitable for backlighting of display panels  
for optical coupling into light pipes  
uniform illumination of a diffuser screen in front of the custom built reflector  
solder leads with stand-off  
available taped on reel  
load dump resistant acc. to DIN 40839  
Note: If the diffuser screen is tinted, the spectral transmission must be adjusted to the  
wavelength emitted by the LED.  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstrom  
Luminous Flux  
IF = 2 mA  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
ΦV (mlm)  
LS K389-FO  
LY K389-FO  
LG K389-FO  
super-red  
yellow  
red clear  
1 (5.0 typ.)  
1 (3.2 typ.)  
1 (3.2 typ.)  
Q62703-Q1771  
Q62703-Q1772  
Q62703-Q1773  
yellow clear  
green clear  
green  
Streuung des Lichtstromes in einer Verpackungseinheit ΦV max/ΦV min 2.0.  
Luminous flux ratio in one packaging unit ΦV max/ΦV min 2.0.  
Semiconductor Group  
1
11.96  
LS K389, LY K389, LG K389  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
T
op  
– 55 … + 100  
˚C  
Operating temperature range  
Lagertemperatur  
Storage temperature range  
T
– 55 … + 100  
+ 100  
˚C  
stg  
Sperrschichttemperatur  
Junction temperature  
T
j
˚C  
Durchlaßstrom  
Forward current  
IF  
7.5  
mA  
mA  
Stoßstrom  
IFM  
150  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
TA 25 ˚C  
P
tot  
20  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air  
Rth JA  
500  
K/W  
Semiconductor Group  
2
LS K389, LY K389, LG K389  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes (typ.) λpeak  
635  
586  
590  
45  
565  
nm  
nm  
nm  
Wavelength at peak emission  
(typ.)  
IF = 7.5 mA  
Dominantwellenlänge  
Dominant wavelength  
IF = 7.5 mA  
(typ.) λdom  
(typ.)  
628  
45  
570  
25  
Spektrale Bandbreite bei 50 % Φrel max(typ.) ∆λ  
Spectral bandwidth at 50 % Φrel max (typ.)  
IF = 7.5 mA  
Durchlaßspannung  
Forward voltage  
IF = 2 mA  
(typ.) VF  
(max.) VF  
1.8  
2.6  
2.0  
2.7  
1.9  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität  
(typ.) C0  
3
3
15  
pF  
Capacitance  
VR = 0 V, ƒ = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100 mA, tP = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
200  
150  
200  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
LS K389, LY K389, LG K389  
Relative spektrale Emission Φrel = ƒ (λ), TA = 25 ˚C, IF = 7.5 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik Φrel = f (ϕ)  
Radiation characteristic  
Semiconductor Group  
4
LS K389, LY K389, LG K389  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relativer Lichtstrom ΦV/ΦV (2 mA) = f (IF)  
Relative luminous flux  
TA = 25 ˚C  
Zulässige Impulsbelastbarkeit IF = f (tP)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
Semiconductor Group  
5
LS K389, LY K389, LG K389  
Wellenlänge der Strahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 7.5 mA  
Dominantwellenlänge λdom = f (TA)  
Dominant wavelength  
IF = 7.5 mA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 2 mA  
Relativer Lichtstrom ΦV/ΦV(25 °C) = ƒ (TA)  
Relative luminous flux  
IF = 2 mA  
Semiconductor Group  
6
LS K389, LY K389, LG K389  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
Kathodenkennzeichnung:  
Cathode mark:  
Kürzerer Lötspieß  
Short solder lead  
Semiconductor Group  
7

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