LYU260-EO [INFINEON]

Mini LED 1 mm LED, Diffused; 迷你LED 1毫米的带领下,扩散
LYU260-EO
型号: LYU260-EO
厂家: Infineon    Infineon
描述:

Mini LED 1 mm LED, Diffused
迷你LED 1毫米的带领下,扩散

文件: 总7页 (文件大小:380K)
中文:  中文翻译
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Mini LED  
LS U260, LY U260, LG U260  
1 mm LED, Diffused  
Besondere Merkmale  
eingefärbtes, diffuses Gehäuse  
als optischer Indikator einsetzbar  
Miniaturgehäuse  
Störimpulsfest nach DIN 40839  
Features  
colored, diffused package  
for use as optical indicator  
miniature package  
load dump resistant acc. to DIN 40839  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstärke  
Luminous  
Intensity  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
IF = 10 mA  
IV (mcd)  
LS U260-EO  
LY U260-EO  
LG U260-EO  
super-red  
yellow  
red diffused  
0.63  
0.63  
Q62703-Q1492  
Q62703-Q1493  
Q62703-Q1494  
yellow diffused  
green  
colorless diffused 0.63  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
1
11.96  
LS U260, LY U260, LG U260  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
T
– 40 … + 80  
˚C  
˚C  
˚C  
mA  
A
op  
Lagertemperatur  
Storage temperature range  
T
stg  
– 40 … + 80  
+ 80  
Sperrschichttemperatur  
Junction temperature  
T
j
Durchlaßstrom  
Forward current  
IF  
15  
Stoßstrom  
IFM  
0.35  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
TA 25 ˚C  
P
tot  
50  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air  
Rth JA  
1100  
K/W  
Semiconductor Group  
2
LS U260, LY U260, LG U260  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes (typ.) λpeak  
635  
586  
590  
45  
565  
nm  
nm  
nm  
Wavelength at peak emission  
(typ.)  
IF = 20 mA  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.)  
628  
45  
570  
25  
Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ  
Spectral bandwidth at 50 % Irel max  
IF = 20 mA  
(typ.)  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
2ϕ  
60  
60  
60  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 10 mA  
(typ.) VF  
(max.) VF  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität  
(typ.) C0  
12  
10  
15  
pF  
Capacitance  
VR = 0 V, ƒ = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100 mA, tP = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
300  
150  
300  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
LS U260, LY U260, LG U260  
Relative spektrale Emission Irel = ƒ (λ), TA = 25 ˚C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
Semiconductor Group  
4
LS U260, LY U260, LG U260  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relative Lichtstärke IV/IV(10 mA) = f (IF)  
Relative luminous intensity  
TA = 25 ˚C  
Zulässige Impulsbelastbarkeit IF = f (tP)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
Semiconductor Group  
5
LS U260, LY U260, LG U260  
Wellenlänge der Strahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 15 mA  
Dominantwellenlänge λdom = f (TA)  
Dominant wavelength  
IF = 15 mA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 10 mA  
Relative Lichtstärke IV/IV(25 ˚C) = f (TA)  
Relative luminous intensity  
IF = 10 mA  
Semiconductor Group  
6
LS U260, LY U260, LG U260  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
Semiconductor Group  
7

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