MBR745 [INFINEON]
SCHOTTKY RECTIFIER 7.5 Amp; 肖特基整流器7.5安培
| 型号： | MBR745 |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER 7.5 Amp |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-21048 rev. A 06/06
MBRB7..PbF
SCHOTTKY RECTIFIER
7.5 Amp
IF(AV) = 7.5Amp
VR = 35 - 45V
Major Ratings and Characteristics
Description/ Features
The MBRB7.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
Characteristics
Values
Units
I
Rectangular
waveform
7.5
A
F(AV)
V
I
35 - 45
690
V
A
RRM
150° C T operation
J
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@ tp=5μssine
FSM
High frequency operation
V
@7.5Apk,T =125°C
J
0.57
V
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
range
- 65 to150
°C
Lead-Free ("PbF" suffix)
Case Styles
Base
Cathode
2
3
1
N/C
Anode
D2PAK
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1
MBRBB7..PbF Series
Bulletin PD-21048 rev. A 06/06
Voltage Ratings
Parameters
MBRB735PbF
MBRB745PbF
VR
Max. DC Reverse Voltage (V)
35
45
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
MBR.. Units Conditions
IF(AV) Max.AverageForwardCurrent
7.5
690
150
A
@TC =131°C(RatedVR)
Following any rated load
condition and with rated
VRRMapplied
IFSM Non-RepetitivePeakSurgeCurrent
A
5μs Sineor3μsRect.pulse
Surgeappliedatratedloadconditionhalfwavesingle
phase60Hz
EAS Non-RepetitiveAvalancheEnergy
7
2
mJ TJ = 25°C, IAS =2Amps,L=3.5mH
IAR
RepetitiveAvalancheCurrent
A
Currentdecayinglinearlytozeroin1μsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
MBR.. Units Conditions
VFM Max. Forward Voltage Drop(1)
0.84
0.57
0.72
0.1
V
V
V
@
15A
@ 7.5A
15A
TJ = 25 °C
TJ = 125 °C
@
IRM Max. Instantaneus Reverse Current
(1)
mA TJ = 25 °C
mA TJ = 125 °C
Rated DC voltage
15
CT
LS
Max. Junction Capacitance
Typical Series Inductance
400
8.0
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured from top of terminal to mounting plane
V/ μs
dv/dt Max. Voltage Rate of Change
(Rated VR)
10000
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
MBR.. Units Conditions
TJ
Max.JunctionTemperatureRange
-65to150
-65to175
3.0
°C
Tstg Max.StorageTemperatureRange
°C
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
RthCS TypicalThermalResistance,Case
toHeatsink
0.50
°C/W Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
2(0.07) g(oz.)
Kg-cm
(Ibf-in)
Min.
6(5)
Max.
12(10)
MarkingDevice
MBRB7..
CasestyleD2Pak
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2
MBRB7..PbF Series
Bulletin PD-21048 rev. A 06/06
100
10
100
10
1
T
= 150˚C
125˚C
J
1
100˚C
0.1
75˚C
50˚C
0.01
0.001
0.0001
25˚C
0
5
10 15 20 25 30 35 40 45
ReverseVoltage-VR(V)
T
T
T
= 150˚C
= 125˚C
J
J
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
1000
=
25˚C
T
= 25˚C
J
100
0
10
20
30
40
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
ReverseVoltage-VR(V)
ForwardVoltageDrop-VFM (V)
Fig.1-Max. Forward Voltage Drop Characteristics
(PerLeg)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage (PerLeg)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
P
DM
0.1
t
1
t
2
Single Pulse
0.01
Notes:
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001
0.0001
0.001
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics(PerLeg)
0.01
0.1
1
10
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3
MBRBB7..PbF Series
Bulletin PD-21048 rev. A 06/06
150
140
7
6
5
4
3
2
1
0
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
RMS Limit
DC
130
120
Square Wave (D = 0.50)
Rated Vr Applied
see note (2)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
AverageForwardCurrent-IF(AV) (A)
AverageForwardCurrent-IF(AV) (A)
Fig.5-Max. Allowable CaseTemperature
Vs. Average Forward Current
Fig.6-Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig.7-Max. Non-Repetitive Surge Current (PerLeg)
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1= ratedVR
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4
MBRB7..PbF Series
Bulletin PD-21048 rev. A 06/06
Outline Table
ConformtoJEDECoutlineD2Pak(SMD-220)
Dimensions in millimeters and (inches)
Part Marking Information
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
THIS IS A MBRB745
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
MBRB745
LOGO
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
P = LEAD-FREE
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5
MBRBB7..PbF Series
Bulletin PD-21048 rev. A 06/06
Tape & Reel Information
Dimensionsinmillimetersand(inches)
Ordering Information Table
Device Code
MBR
B
7
45 TRL PbF
2
4
5
1
3
6
1
2
-
-
Essential Part Number
= Surface Mount
B
None = TO-220
3
4
5
-
-
-
Current Rating (7.5A)
Voltage code: Code = V
35 = 35V
45 = 45V
RRM
y none = Tube (50 pieces)
y TRL = Tape & Reel (Left Oriented - for D2Pak only)
y TRR = Tape & Reel (Right Oriented - for D2Pak only)
y none = Standard Production
6
-
y PbF = Lead-Free
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6
MBRB7..PbF Series
Bulletin PD-21048 rev. A 06/06
MBR745
********************************************
*
*
*
*
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999) *
(International Rectifier Corporation) *
*
contains Proprietary Information
*
********************************************
* SPICE Model Diode is composed by a
* simple diode plus paralled VCG2T
********************************************
.SUBCKT MBR745 ANO CAT
D1 ANO 1 DMOD (0.03191)
*
*
*Define diode model
.MODELDMODD(IS=9.72464638473799E-05A,N=1.30648926537753,BV=52V,
+IBV=0.195508065728349A,RS=0.000727548,CJO=1.94829876431799E-08,
+ VJ=2.27282978121533,XTI=2, EG=0.854458710837653)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=27.6281424524011)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-5.219758E-03/27.62814)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-
1))+1)*7.000165E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS MBR745
Thermal Model Subcircuit
.SUBCKT MBR745 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.05E+00
4.44E+00
1.16E+01
6.12E+01
RTHERM1
RTHERM2
RTHERM1
RTHERM1
5
4
3
2
4
3
2
1
1.33E+00
1.19E+00
3.81E-01
9.54E-02
.ENDS MBR745
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 06/06
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7
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