MCT275 [INFINEON]
Industry Standard Single Channel 6 Pin DIP Optocoupler; 行业标准单通道6引脚DIP光耦合器
| 型号： | MCT275 |
| 厂家： | 
Infineon |
| 描述： | Industry Standard Single Channel 6 Pin DIP Optocoupler |
| 文件： | 总6页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Dimensions in Inches (mm)
Part No.
4N25
CTR % Min.
20
Part No.
MCT2
MCT2E
CTR % Min.
20
20
pin one ID
Anode
2
1
3
4N26
20
6
5
4
Base
1
2
3
.248 (6.30)
.256 (6.50)
4N27
4N28
4N35
4N36
4N37
4N38
H11A1
H11A2
H11A3
H11A4
H11A5
10
10
100
100
100
10
50
20
20
10
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
50
45–90
75–150
125–250
225–400
70–90
15–60
100
Cathode
NC
Collector
Emitter
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
30
.010 (.25)
typ.
.300–.347
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
FEATURES
.100 (2.54) typ.
(7.62–8.81)
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS
• 5300 V
DESCRIPTION
®
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
Isolation Test Voltage
RMS
• Underwriters Laboratory File #E52744
VE
D
•
VDE #0884 Approval Available with Option 1
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V
Isolation Test Voltage. This isolation performance
RMS
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
®
(TRIOS) on the phototransistor substrate. These isolation pro-
Notes:
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
Designing with data sheet is covered in Application Note 45.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53
March 27, 2000-00
Maximum Ratings T =25°C
A
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t≤10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage .............................................................................................. ≥7.0 mm
Clearance ............................................................................................. ≥7.0 mm
Isolation Thickness between Emitter and Detector............................... ≥0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
12
V =500 V, T =25°C...............................................................................10
Ω
Ω
IO
A
11
V =500 V, T =100°C............................................................................ 10
IO
A
Storage Temperature................................................................ –55°C to +150°C
Operating Temperature ............................................................ –55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics T =25°C
A
Emitter
Symbol
Min.
—
Typ.
1.3
0.1
25
Max.
1.5
Unit
V
Condition
Forward Voltage*
Reverse Current*
Capacitance
Detector
I =50 mA
V
F
F
—
100
—
µA
pF
V =3.0 V
I
R
R
—
V =0
C
R
O
Breakdown Voltage*
Collector-Emitter
Emitter-Collector
Collector-Base
BV
BV
BV
—
30
7.0
70
—
—
—
—
—
—
—
V
I =1.0 mA
CEO
ECO
CBO
C
I =100 µA
E
I =100 µA
C
I
(dark)*
(dark)*
4N25/26/27
4N28
5.0
10
50
100
nA
V
=10 V, (base open)
CEO
CE
I
—
—
—
2.0
6.0
20
nA
pF
V
V
=10 V, (emitter open)
=0
CBO
CB
Capacitance, Collector-Emitter
Package
—
C
CE
CE
DC Current Transfer Ratio*
4N25/26
4N27/28
4N25
CTR
20
50
30
—
—
—
—
—
—
0.5
—
—
—
%
V
V
=10 V, I =10 mA
CE F
10
Isolation Voltage*
2500
1500
500
—
Peak, 60 Hz
V
IO
4N26/27
4N28
—
—
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
—
V
I
=2.0 mA, I =50 mA
CE F
V
R
CE(sat)
100
—
—
GΩ
pF
µs
V =500 V
IO
IO
0.5
2.0
f=1.0 MHz
C
IO
Rise and Fall Times
t , t
—
I =10 mA
r
f
F
V
=10 V, R =100 Ω
CE
L
* Indicates JEDEC registered values
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
March 27, 2000-00
2–54
4N35/36/37/38—Characteristics T =25°C
A
Emitter
Symbol
Min. Typ. Max. Unit
Condition
Forward Voltage*
V
1.3
1.5
1.7
V
I =10 mA
F
F
F
0.9
I =10 mA, T =–55°C
A
Reverse Current*
Capacitance
Detector
I
0.1
25
10
µA
V =6.0 V
R
R
C
—
pF
V =0, f=1.0 MHz
R
O
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BV
30
80
7.0
70
80
—
—
—
—
—
—
—
—
—
—
—
50
50
500
—
—
V
I =1.0 mA
CEO
C
4N38
—
Breakdown Voltage, Emitter-Collector*
Breakdown Voltage, Collector-Base*
BV
BV
—
V
I =100 µA
ECO
CBO
E
4N35/36/37
4N38
—
V
I =100 µA, I =1.0 µA
C
B
—
—
nA
Leakage Current, Collector-Emitter*
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
I
I
5.0
—
V
=10 V, I =0
F
CEO
CE
CE
CE
CE
CE
V
V
V
V
=60 V, I =0
F
4N35/36/37
4N38
—
µA
pF
%
=30 V, I =0, T =100°C
CEO
F
A
6.0
6.0
=60 V, I =0, T =100°C
F A
Capacitance, Collector-Emitter
Package
C
=0
CE
DC Current Transfer Ratio*
4N35/36/37
4N38
CTR
100
20
40
—
—
—
—
—
—
—
—
—
V
V
V
=10 V, I =10 mA,
F
CE
CE
CE
—
=1.0 V, I =20 mA
F
DC Current Transfer Ratio*
4N35/36/37
4N38
CTR
50
30
—
%
=10 V, IF=10 mA,
T =–55 to 100°C
A
—
—
Ω
11
Resistance, Input to Output*
Coupling Capacitance
R
10
—
—
V =500 V
IO
IO
C
0.5
10
pF
µs
f=1.0 MHz
IO
Switching Time*
tON, tOFF
I =2.0 mA, R =100 Ω, V =10 V
C
L
CC
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics T =25°C
A
Emitter
Symbol
Min. Typ. Max. Unit
Condition
Forward Voltage
H11A1–H11A4
V
—
—
—
—
1.1
1.1
—
1.5
1.7
10
—
V
IF=10 mA
F
H11A5
Reverse Current
I
µA
VR=3.0 V
R
Capacitance
C
50
pF
VR=0, f=1.0 MHz
0
Detector
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
BV
BV
BV
30
7.0
70
—
—
—
—
—
50
—
V
IC=1.0 mA, I =0 mA
CEO
ECO
CBO
F
—
V
I =100 µA, I =0 mA
E
F
—
V
IC=10 µA, I =0 mA
F
I
5.0
6.0
nA
pF
VCE=10 V, I =0 mA
CEO
F
C
—
VCE=0
CE
DC Current Transfer Ratio
H11A1
H11A2/3
H11A4
H11A5
CTR
50
20
10
30
—
—
—
—
—
—
—
—
0.4
—
—
%
VCE=10 V, IF=10 mA
—
—
—
Saturation Voltage, Collector-Emitter
Capacitance, Input to Output
Switching Time
V
—
V
I
=0.5 mA, IF=10 mA
CE
CE
sat
C
0.5
3.0
pF
µs
—
IO
tON, tOFF
IC=2.0 mA, R =100 Ω, V =10 V
L CE
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
March 27, 2000-00
2–55
MCT2/MCT2E—Characteristics T =25°C
A
Emitter
Symbol Min. Typ. Max. Unit
Condition
Forward Voltage
Reverse Current
Capacitance
Detector
V
I
—
—
—
1.1
—
1.5
10
—
V
IF=20 mA
F
µA
pF
V =3.0 V
R
R
C
25
V =0, f=1.0 MHz
O
R
Breakdown Voltage
Collector-Emitter BV
Emitter-Collector BV
30
7.0
70
—
—
—
—
5.0
—
10
—
—
—
50
20
—
V
IC=1.0 mA, IF=0 mA
CEO
ECO
CBO
I =100 µA, IF=0 mA
E
Collector-Base
Collector-Emitter
Collector-Base
—
BV
IC=10 µA, IF=0 mA
Leakage Current
I
I
nA
—
V
=10 V, IF=0
CBO
CBO
CE
—
Capacitance, Collector-Emitter
Package
C
—
pF
VCE=0
CE
DC Current Transfer Ratio
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
CTR
20
—
—
—
60
—
—
—
—
%
VCE=10 V, IF=10 mA
0.5
100
3.0
pF
GΩ
µs
—
C
R
IO
—
IO
tON, tOFF
IC=2.0 mA, R =100 Ω, V =10 V
L
CE
MCT270 through MCT277—Characteristics T =25°C
A
Emitter
Symbol Min. Typ. Max. Unit
Condition
IF=20 mA
VR=3.0 V
Forward Voltage
Reverse Current
Capacitance
Detector
V
I
1.5
10
—
V
—
—
—
—
—
25
F
µA
pF
R
C
VR=0, f=1.0 MHz
O
Breakdown Voltage
Collector-Emitter BV
Emitter-Collector BV
30
7.0
70
—
V
I =10 µA, IF=0 mA
—
—
—
—
—
—
—
50
CEO
ECO
CBO
C
I =10 µA, IF=0 mA
E
Collector-Base
BV
IC=10 µA, IF=0 mA
VCE=10 V, IF=0 mA
—
Leakage Current, Collector-Emitter
Package
I
nA
CEO
DC Current Transfer Ratio
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
MCT271–276
MCT277
CTR
50
45
75
125
225
70
15
100
12.5
40
—
—
—
—
—
—
—
—
—
—
—
—
0.5
—
%
VCE=10 V, IF=10 mA
90
150
250
400
210
60
—
Current Transfer Ratio, Collector–Emitter
CTR
—
%
—
V
VCE=0.4 V, IF=16 mA
CE
—
Collector–Emitter Saturation Voltage
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
0.4
—
V
ICE=2.0 mA, IF=16 mA
—
CE
sat
C
R
—
pF
Ω
IO
12
—
10
—
—
—
—
—
—
—
VIO=500 VDC
IO
MCT270/272
MCT271
—
10
tON, tOFF
µs
I =2.0 mA,
C
R =100 Ω,
L
—
7.0
20
V
CE=5.0 V
MCT273
—
MCT274
—
25
MCT275/277
MCT276
—
15
—
3.5
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
March 27, 2000-00
2–56
Figure 1. Forward Voltage vs. Forward Current
Figure 4. Normalized Non-saturated and Saturated
CTR, T =70°C vs. LED Current
A
1.4
1.3
1.5
Normalized to:
Vce=10 V, I =10 mA, T =25°C
F
A
T
= –55°C
= 25°C
A
CTRce(sat) Vce=0.4 V
1.2
1.1
1.0
0.9
0.8
0.7
1.0
0.5
0.0
T
A
T =70°C
A
T
= 85°C
A
NCTR(SAT)
NCTR
.1
1
10
100
.1
1
10
100
I
- LED Current - mA
I
- Forward Current - mA
F
F
Figure 2. Normalized Non-saturated and Saturated
Figure 5. Normalized Non-saturated and Saturated
CTR, T =25°C vs. LED Current
CTR, T =85°C vs. LED Current
A
A
1.5
1.5
Normalized to:
Normalized to:
Vce=10 V, I =10 mA, T =25°C
CTRce(sat) Vce=0.4 V
F
A
Vce=10 V, I =10 mA, T =25°C
F
A
CTRce(sat) Vce = 0.4 V
1.0
0.5
0.0
1.0
0.5
0.0
T =25°C
A
T =85°C
A
NCTR(SAT)
NCTR
NCTR(SAT)
NCTR
.1
1
10
100
0
1
10
100
I
- LED Current - mA
F
I
- LED Current - mA
F
Figure 3. Normalized Non-saturated and Saturated
Figure 6. Collector-emitter Current vs. Temperature
and LED Current
CTR, T =50°C vs. LED Current
A
35
30
1.5
Normalized to:
Vce=10 V, I =10 mA, T =25°C
F
A
CTRce(sat) Vce=0.4 V
25
50°C
1.0
0.5
0.0
20
T =50°C
A
70°C
15
25°C
85°C
10
5
NCTR(SAT)
NCTR
0
0
10
20
30
40
50
60
.1
1
10
100
I
- LED Current - mA
I
- LED Current - mA
F
F
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
March 27, 2000-00
2–57
Figure 7. Collector-emitter Leakage Current vs.Temp.
Figure 10. Normalized Non-saturated HFE vs. Base
Current and Temperature
5
10
1.2
4
70°C
10
50°C
3
10
1.0
25°C
2
10
–20°C
1
0
V
= 10 V
ce
0.8
10
10
10
10
Typical
Normalized to:
Ib=20 µA, Vce=10 V, T =25°C
A
0.6
0.4
–1
–2
–20
0
20
40
60
80
100
1
10
100
1000
Ib - Base Current - µA
T
- Ambient Temperature - °C
A
Figure 11. Normalized HFE vs. Base Current and Temp.
Figure 8. Normalized CTRcb vs. LED Current and Temp.
1.5
1.5
Normalized to:
Vce=10 V, Ib=20 µA
A
Normalized to:
Vcb=9.3 V, I =10 mA, T =25°C
F
A
50°C
T =25°C
70°C
1.0
1.0
0.5
0.0
25°C
–20°C
0.5
0.0
25°C
50°C
70°C
Vce=0.4 V
1
10
100
1000
.1
1
10
100
Ib - Base Current - µA
I
F
- LED Current - mA
Figure 12. Propagation Delay vs. Collector Load Resistor
Figure 9. Normalized Photocurrent vs. I and Temp.
F
10
1000
100
10
2.5
I =10 mA, T =25°C
CC
Normalized to:
F
V
A
=5.0 V, Vth=1.5 V
I =10 mA, T =25°C
F
A
t
PHL
2.0
1
0.1
1.5
1.0
Nib, T =–20°C
A
t
PLH
Nib, T =25°C
A
Nib, T = 50°C
A
Nib, T =70°C
A
0.01
1
.1
1
10
100
.1
1
10
100
I
F
- LED Current - mA
RL - Collector Load Resistor - kΩ
Figure 14. Switching Schematic
Figure 13. Switching Timing
IF
V
= 5.0 V
CC
F=10 KHz,
DF=50%
R
L
tD
tR
V
VO
O
tPLH
I =10 mA
F
=1.5 V
VTH
tF
tS
tPHL
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
March 27, 2000-00
2–58
相关型号：
MCT275-SM
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6
ISOCOM
©2020 ICPDF网 联系我们和版权申明