MMBD914 [INFINEON]
Silicon Switching Diode; 硅开关二极管
| 型号： | MMBD914 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode |
| 文件： | 总4页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBD914/MMBD914...
Silicon Switching Diode
• For high-speed switching applications
SMBD914/MMBD914
3
1
2
Type
Package
SOT23
Configuration
single
Marking
s5D
SMBD914/MMBD914
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
100
100
Unit
V
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
V
V
R
RM
250
mA
A
I
F
I
FSM
4.5
0.5
370
t = 1 s
mW
°C
Total power dissipation
P
tot
T ≤ 54°C
S
150
Junction temperature
Storage temperature
T
T
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
SMBD914/MMBD914
Symbol
Value
≤ 260
Unit
K/W
1)
R
thJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Mar-10-2004
1
SMBD914/MMBD914...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
100
-
-
V
Breakdown voltage
V
(BR)
I
= 100 µA
(BR)
Reverse current
V = 20 V
I
µA
R
-
-
-
-
-
-
-
-
0.025
0.1
30
R
V = 75 V
R
V = 20 V, T = 150 °C
R
A
V = 75 V, T = 150 °C
50
R
A
mV
Forward voltage
I = 1 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
F
I = 10 mA
F
I = 50 mA
F
I = 100 mA
F
I = 150 mA
F
AC Characteristics
Diode capacitance
-
-
-
2
4
pF
ns
C
T
V = 0 V, f = 1 MHz
R
Reverse recovery time
t
-
rr
I = 10 mA, I = 10 mA, measured at I = 1mA ,
F
R
R
R = 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: t = 100ns, D = 0.05, t = 0.6ns,
p
r
R = 50Ω
i
Oscillograph
ΙF
Oscillograph: R = 50Ω, t = 0.35ns, C ≤ 1pF
r
EHN00019
Mar-10-2004
2
SMBD914/MMBD914...
Reverse current I = ƒ (T )
Forward Voltage V = ƒ (T )
F A
R
A
V = Parameter
I = Parameter
R
F
10 5
nA
SMBD 914
EHB00114
1.0
V
Ι
F = 100 mA
10 mA
VF
10 4
10 3
10 2
10 1
1 mA
0.5
0.1 mA
70 V
25 V
0
°C
0
25
50
75
100
150
0
50
100
150
˚C
T
A
TA
Forward current I = ƒ (V )
Forward current I = ƒ (T )
F
F
F
S
T = 25°C
SMBD914/MMBD914
A
SMBD 7000
EHB00137
300
mA
150
mA
Ι F
200
150
100
50
100
50
0
typ
max
0
°C
0
15 30 45 60 75 90 105 120
150
0
0.5
1.0
V
1.5
T
S
VF
Mar-10-2004
3
SMBD914/MMBD914...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
I
/ I
= ƒ (t )
Fmax FDC p
10 3
K/W
10 2
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
0.5
10 1
10 1
0.2
0.2
0.1
0.5
0.05
0.02
0.01
10 0
0.005
D = 0
10 -1
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
t
p
p
Mar-10-2004
4
相关型号：
MMBD914-HE3-18
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
VISHAY
MMBD914-T1-LF
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
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