MURS120PBF [INFINEON]

Ultrafast Rectifier; 超快整流器
MURS120PBF
型号: MURS120PBF
厂家: Infineon    Infineon
描述:

Ultrafast Rectifier
超快整流器

整流二极管 光电二极管
文件: 总6页 (文件大小:115K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin PD-20877 11/04  
MURS120PbF  
Ultrafast Rectifier  
Features  
• Ultrafast Recovery Time  
IF(AV) = 1.0Amp  
VR = 200V  
• Low Forward Voltage Drop  
• Low Leakage Current  
• 175°C Operating Junction Temperature  
• Lead-Free ("PbF" suffix)  
Description/ Applications  
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with  
optimized performance of forward voltage drop and ultra fast recovery time.  
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as  
free-wheeling diode in low voltage inverters and chopper motor drives.  
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
Absolute Maximum Ratings  
Parameters  
Max  
Units  
VRRM  
IF(AV)  
IFSM  
Peak Repetitive Peak Reverse Voltage  
Average Rectified Forward Current, T L = 158°C  
Non Repetitive Peak Surge Current  
200  
V
1
40  
A
TJ, TSTG Operating Junction and Storage Temperatures  
- 65 to 175  
°C  
Case Styles  
MURS120PbF  
SMB  
www.irf.com  
1
MURS120PbF  
Bulletin PD-20877 11/04  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
VBR, Vr  
VF  
Breakdown Voltage,  
Blocking Voltage  
200  
-
-
V
IR = 100µA  
Forward Voltage  
-
-
-
-
-
0.83 0.875  
0.65 0.71  
V
IF = 1A  
V
IF = 1A, TJ = 150°C  
VR = VR Rated  
TJ = 150°C, VR = VR Rated  
VR = 200V  
IR  
Reverse Leakage Current  
Junction Capacitance  
0.1  
11  
12  
2
50  
-
µA  
µA  
pF  
CT  
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
trr  
Reverse Recovery Time  
-
-
-
-
35  
25  
ns  
IF = 1.0A, diF/dt = 50A/µs, VR = 30V  
IF = 0.5A, IR = 1.0A, IREC = 0.25A  
Thermal - Mechanical Characteristics  
Parameters  
Min  
Typ  
Max  
175  
175  
21  
Units  
TJ  
Max. Junction Temperature Range  
-
- 65  
-
-
-
-
°C  
TStg  
Max. Storage Temperature Range  
RthJL  
Wt  
Thermal Resistance, Junction to Lead  
Weight  
°C/W  
-
-
0.1  
0.07  
-
-
g
(oz)  
wt  
Approximate Weight  
Case Style  
0.10 (0.003)  
SMB  
g (oz.)  
Device Marking  
IRU120  
2
www.irf.com  
MURS120PbF  
Bulletin PD-20877 11/04  
10  
100  
10  
Tj = 175˚C  
150˚C  
125˚C  
100˚C  
1
75˚C  
0.1  
50˚C  
25˚C  
0.01  
0.001  
T
T
T
= 175˚C  
= 150˚C  
0
50  
100  
150  
200  
J
J
J
Reverse Voltage-VR (V)  
1
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
=
25˚C  
100  
Tj = 25˚C  
0.1  
0.4  
10  
0.6  
0.8  
1
1.2  
1.4  
0
40  
80  
120  
160  
200  
Forward Voltage Drop-VFM (V)  
Reverse Voltage-VR (V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
Fig.1-Typical Forward Voltage Drop Characteristics  
100  
D = 0.50  
D = 0.20  
D = 0.10  
10  
D = 0.05  
D = 0.02  
D = 0.01  
P
DM  
t
1
t
1
Single Pulse  
2
(Thermal Resistance)  
Notes:  
1. Duty factor D = t1/ t2  
2. Peak Tj = Pdm x ZthJC+ Tc  
0.1  
0.001  
0.01  
0.1  
1
10  
t1,Rectangular Pulse Duration (Seconds)  
Fig.4-Max. Thermal Impedance Z thJC Characteristics  
www.irf.com  
3
MURS120PbF  
Bulletin PD-20877 11/04  
1
0.8  
0.6  
0.4  
0.2  
0
180  
170  
160  
RMS Limit  
DC  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
DC  
Square wave (D = 0.50)  
Rated Vr applied  
150  
140  
see note (3)  
0.4  
0
0.8  
1.2  
1.6  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6  
Average Forward Current - IF(AV) (A)  
Average Forward Current - IF(AV) (A)  
Fig.5-Max. Allowable LeadTemperature  
Vs. Average Forward Current  
Fig. 6-Forward Power Loss Characteristics  
100  
10  
Tj = 25˚C  
Tj = 25˚C  
10  
Vr = 30V  
If = 1A  
Vr = 30V  
If = 1A  
1
100  
1
100  
1000  
1000  
diF/dt (A/µs)  
di F /dt (A/µs)  
Fig. 8 - Typical Stored Charge vs. di F /dt  
Fig. 7 - Typical Reverse Recovery vs. di F /dt  
(3) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM@(IF(AV)/D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR(1-D); IR @VR1=ratedVR  
4
www.irf.com  
MURS120PbF  
Bulletin PD-20877 11/04  
Outline Table  
CATHODE  
1
ANODE  
Device Marking: IR1C  
2
2.15 (.085)  
1.80 (.071)  
3.80 (.150)  
3.30 (.130)  
2
POLARITY  
PART NUMBER  
1
4.70 (.185)  
4.10 (.161)  
2.5 TYP.  
SOLDERING PAD  
(.098 TYP.)  
2.40 (.094)  
1.90 (.075)  
0.30 (.012)  
1.30 (.051)  
0.76 (.030)  
0.15 (.006)  
2.0 TYP.  
(.079 TYP.)  
5.60 (.220)  
5.00 (.197)  
4.2 (.165)  
4.0 (.157)  
Outline SMB  
Dimensions in millimeters and (inches)  
For recommended footprint and soldering techniques refer to application note #AN-994  
Marking & Identification  
Each device has 2 rows for identification. The first row designates the device as manufactured by International  
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and  
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.  
IRU120  
VOLTAGE  
CURRENT  
PROCESS TYPE  
IR LOGO  
PYWWX  
SITE ID  
WEEK  
2nd digit of the YEAR  
"Y" = 1st digit of the YEAR "standard product"  
"P" = "Lead-Free"  
www.irf.com  
5
MURS120PbF  
Bulletin PD-20877 11/04  
Tape & Reel Information  
Dimensions in millimeters and (inches)  
Ordering Information Table  
Device Code  
MUR  
S
1
20 TR PbF  
2
4
1
3
5
6
1
-
-
-
-
-
Ultrafast MUR Series  
Package Style: SMB  
Current Rating (1 = 1A)  
2
3
4
5
Voltage Rating (20 = 200V)  
y none= Box (1000 pieces)  
y TR = Tape & Reel (3000 pieces)  
y none= Standard Production  
y PbF = Lead-Free  
6
-
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 11/04  
6
www.irf.com  

相关型号:

MURS120T3

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-600 VOLTS
MOTOROLA

MURS120T3

Surface Mount Ultrafast Power Rectifiers
ONSEMI

MURS120T3/D

Surface Mount Ultrafast Power Rectifier
ETC

MURS120T3G

Surface Mount Ultrafast Power Rectifiers
ONSEMI

MURS120T3_06

ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS
ONSEMI

MURS120T3_10

Surface Mount Ultrafast Power Rectifiers
ONSEMI

MURS120_1

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES

MURS120_10

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES

MURS130

ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
GULFSEMI

MURS130

1.0A patch fast recovery diode 300V SMB series
SUNMATE

MURS130T3

2A, 300V, SILICON, RECTIFIER DIODE, COMPACT, PLASTIC, CASE 403A-01, 2 PIN
MOTOROLA

MURS140

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES