OBTS949 [INFINEON]
Smart Lowside Power Switch; 智能低压侧电源开关
| 型号： | OBTS949 |
| 厂家： | 
Infineon |
| 描述： | Smart Lowside Power Switch |
| 文件： | 总11页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HITFET BTS 949
Smart Lowside Power Switch
Features
Product Summary
Drain source voltage
On-state resistance
Current limit
• Logic Level Input
60
18
9.5
19
V
V
DS
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
R
mΩ
A
DS(on)
I
D(lim)
Nominal load current
Clamping energy
A
I
D(ISO)
6000 mJ
E
AS
• Maximum current adjustable with external resistor
• Current sense
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
V
bb
+
LOAD
M
2
NC
Drain
3
Overvoltage
protection
Current
dv/dt
1
4
limitation
limitation
IN
CC
Over-
temperature
protection
Overload
protection
Short circuit
ESD
protection
R
CC
5
Source
HITFET
Page 1
14.07.1998
Semiconductor Group
BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
60
V
V
V
DS
DS(SC)
Drain source voltage for short circuit protection
R
= 0 Ω
15
50
CC
without R
CC
1)
Continuous input current
-0.2V ≤ V ≤ 10V
mA
I
IN
no limit
IN
V
< -0.2V or V > 10V
| I | ≤ 2
IN
IN
IN
Operating temperature
Storage temperature
Power dissipation
- 40 ... +150
- 55 ... +150
240
°C
W
mJ
V
T
j
T
stg
P
tot
T = 25 °C
C
Unclamped single pulse inductive energy
= 19 A
6000
3000
E
V
AS
I
D(ISO)
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
2)
ESD
V
Load dump protection V
= V + V
V
LoadDump
A
S
LD
V =low or high; V =13.5 V
IN
A
td = 400 ms, R = 2 Ω, I =0,5*19A
110
92
I
D
td = 400 ms, R = 2 Ω, I = 19A
I
D
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
E
40/150/56
Thermal resistance
junction - case:
0.7
75
45
K/W
R
R
R
thJC
thJA
thJA
junction - ambient:
3)
SMD version, device on PCB:
1
A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
3
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Page 2
14.07.1998
Semiconductor Group
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Drain source clamp voltage
60
-
-
73
25
V
V
DS(AZ)
T = - 40 ...+ 150°C, I = 10 mA
j
D
Off state drain current
= 32 V, T = -40...+150 °C, V = 0 V
-
1.3
-
µA
V
I
DSS
V
DS
j
IN
Input threshold voltage
I = 3,9 mA
1.7
-
2.2
V
IN(th)
D
100 µA
1000
Input current - normal operation, I <I
:
IIN(1)
D
D(lim)
V
IN
= 10 V
-
400
Input current - current limitation mode, I =I
: I
D
D(lim)
IN(2)
IN(3)
IN(H)
V
= 10 V
IN
1500 3000 6000
Input current - after thermal shutdown, I =0 A:
I
I
D
V
= 10 V
IN
Input holding current after thermal shutdown
T = 25 °C
500
300
-
-
-
-
j
T = 150 °C
j
On-state resistance
R
mΩ
DS(on)
DS(on)
I = 19 A, V = 5 V, T = 25 °C
-
-
18
30
22
44
D
IN
j
I = 19 A, V = 5 V, T = 150 °C
D
IN
j
On-state resistance
I = 19 A, V = 10 V, T = 25 °C
R
-
-
14
25
18
36
D
IN
j
I = 19 A, V = 10 V, T = 150 °C
D
IN
j
Nominal load current (ISO 10483)
= 10 V, V = 0.5 V, T = 85 °C
19
-
-
A
I
D(ISO)
V
IN
DS
C
Page 3
14.07.1998
Semiconductor Group
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Initial peak short circuit current limit
-
175
-
A
I
D(SCp)
V
= 10 V, V = 12 V
IN
DS
1)
Current limit
I
D(lim)
V
= 10 V, V = 12 V, t = 350 µs,
DS m
IN
T = -40...+150 °C, without R
9.5
19
40
j
CC
V
= 10 V, V = 12 V, t = 350 µs,
DS m
IN
T = -40...+150 °C, R = 0 Ω
150
220
270
j
CC
Dynamic Characteristics
Turn-on time to 90% I :
R = 1 Ω, V = 0 to 10 V, V = 12 V
-
-
-
-
40
70
1
100 µs
170
V
t
on
IN
D
L
IN
bb
Turn-off time
V
to 10% I :
t
off
IN
D
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
-dV /dt
3
3
V/µs
Slew rate on
70 to 50% V :
bb
DS on
R = 1 Ω, V = 0 to 10 V, V = 12 V
L
IN
bb
dV /dt
1
Slew rate off
50 to 70% V :
DS off
bb
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
Protection Functions
Thermal overload trip temperature
150
165
-
°C
T
jt
Unclamped single pulse inductive energy
mJ
E
AS
I = 19 A, T = 25 °C, V = 32 V
6000
1800
-
-
-
-
D
j
bb
I = 19 A, T = 150 °C, V = 32 V
D
j
bb
Inverse Diode
Inverse diode forward voltage
-
1,1
-
V
V
SD
I = 5*19A, t = 300 µs, V = 0 V
F
m
IN
1
Device switched on into existing short circuit (see diagram Determination of I
. Dependant on the application, these values
D(lim)
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Page 4
14.07.1998
Semiconductor Group
BTS 949
Block Diagramm
Terms
Inductive and overvoltage output clamp
R
L
D
V
Z
I
3
I
IN
D
IN
1
V
V
D
bb
DS
S
HITFET
R
CC
5
CC
S
4
V
V
IN
CC
HITFET
Short circuit behaviour
The ground lead impedance of R
should be as low as possible
CC
V
IN
I
Input circuit (ESD protection)
D(SCp)
I
D(Lim)
I
D
IN
ESD-ZD
I
Source
t 2
t 0
tm
t 1
t :
Turn on into a short circuit
Measurementpoint for I
0
t :
ESD zener diodes are not designed
m
D(lim)
for DC current > 2 mA @ V >10V.
IN
t :
1
Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
Thermal shutdown caused by the second
t :
2
temperature sensor, achieved by an
integrating measurement.
Page 5
14.07.1998
Semiconductor Group
BTS 949
On-state resistance
Maximum allowable power dissipation
R
ON
= f(T ); I =19A; V =10V
j
D
IN
P
= f(T )
tot
c
BTS 949
40
240
W
mΩ
200
180
160
140
120
100
80
DS(on)
R
P
tot
25
20
15
10
5
max.
typ.
60
40
20
0
0
°C
-50 -25
0
25
50
75
100
150
°C
0
20
40
60
80
100 120
150
T
150
j
On-state resistance
Typ. input threshold voltage
R
= f(T ); I = 19A; V =5V
j D IN
V
= f(T ); I =3,9A; V =12V
ON
IN(th)
j
D
DS
45
2.0
V
mΩ
1.6
35
R
V
DS(on)
IN(th)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
max.
25
20
15
10
5
typ.
0
°C
-50 -25
0
25
50
75
100
150
°C
-50 -25
0
25
50
75
100
150
T
j
T
j
Page 6
14.07.1998
Semiconductor Group
BTS 949
Typ. transfer characteristics
I = f(V ); V =12V; T =25°C
Typ. short circuit current
I
= f(Tj); R =0Ω, V =12V
CC DS
D
IN
DS
j
Dlim
Parameter: V
IN
250
160
A
10V
9V
A
120
100
80
60
40
20
0
I
I
D
D
8V
7V
150
100
50
6V
5V
4V
3V
0
V
°C
0
1
2
3
4
5
7
-50 -25
0
25
50
75
100
150
V
T
j
IN
Typ. output characteristic
Safe Operating Area
= f(V ); T =25°C
I = f(V ); T =25°C
I
D
DS
j
D(SC)
DS
j
Parameter: V
IN
150
300
10V
A
A
6V
I
I
D
D
100
75
50
25
0
200
150
100
50
5V
4V
VIN=3V
7
0
V
0
1
2
3
4
5
V
0
10
20
30
50
V
V
DS
DS
Page 7
14.07.1998
Semiconductor Group
BTS 949
Typ. current limit versus R
Typ. current sense characteristics
V = f(I ); V =10V
CC
CC
I
= f(R ); T =25°C
D(lim)
CC
j
D
IN
Parameter: V
IN
Parameter: R , T
CC j
250
A
600
V
10V
no Rcc
500
450
400
350
300
250
200
150
100
50
200
175
150
125
100
75
I
D
V
CC
25°C
82 Ohm
47 Ohm
125°C
5V
22 Ohm
50
25
0
10 -2
10 -1
10 0
10 1
10 2
10 4
0
A
Ω
0
10
20
30
40
50
65
R
CC
I
D
Transient thermal impedance
= f(t )
Z
thJC
P
Parameter: D=t /T
P
10 0
K/W
D=0.5
0.2
0 -1
Z
thJC
0.1
0.05
0.02
10 -2
0.01
0.005
10 -3
0
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 2
s
t
P
Page 8
14.07.1998
Semiconductor Group
BTS 949
Application examples:
Current Sense Features and Status
Signals
D
IN
HITFET
V
µC
bb
CC
S
R
V
CC
CC
IN
open
load
Vcc
thermal
shutdown
Vcc
reached triptemperature
The accuray of Vcc is at each
temperature about ±10 %
Status signal of thermal shutdown by
monitoring input current
R
St
D
S
IN
HITFET
V
V
µC
IN
bb
CC
V
∆
V
IN
thermal shutdown
∆V = R *I
ST IN(3)
Page 9
14.07.1998
Semiconductor Group
BTS 949
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6703-A4
Ordering Code: Q67060-S6703-A2
Ordering Code: Q67060-S6703-A3
Page 10
14.07.1998
Semiconductor Group
BTS 949
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
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Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
2
systems with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
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2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
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Page 11
14.07.1998
Semiconductor Group
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