OM20P10STM [INFINEON]
Power Field-Effect Transistor, 20A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA;
| 型号： | OM20P10STM |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST
OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE, P-CHANNEL
60V To 500V P-Channel MOSFET In A
Hermetic Package
D
FEATURES
• Isolated Hermetic Metal Package
• P-Channel
G
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Available Screened To MIL-S-19500, TX, TXV And S Level
• Ceramic Feedthroughs Available
S
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
BASIC
RDS(on) ( )
VDS (V)
ID (A)
PART NUMBER
OM23P06
OM20P10
OM12P10
OM8P20
TO-257AA
TO-254AA
.12
60
.16
.20
.34
.80
2.08
6.10
23
20
12
8
8
2
3.1
100
100
200
250
500
.16
.30
.75
2.00
6.00
OM8P25
OM2P50
ORDERING INFORMATION
PIN CONNECTION
TO-257AA
TO-254AA
Example:
OM20P10
ST
M
Basic Part Case Screening
Number
Style
Level
Case Style:
ST = TO-257AA
SA = TO-254AA
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Standard Products are supplied with
glass feedthroughs. For ceramic
feedthroughs, add letter “C” to part
number: Example - OM20P10CST.
1 2 3
1 2
3
3.1 - 31
4 11 R0
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM23P06ST/OM23P06SA (60V) STATIC P/N OM20P10ST/OM20P10SA (100V)
Parameter
Min. Max. Units Test Conditions
Parameter
Min. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
D = 250 mA
VDS = VGS, ID = 1.0 mA
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
60
2
V
V
100
2
V
V
I
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.5
VGS(th) Gate-Threshold Voltage
4.5
VDS = VGS, ID = 1.0 mA
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
0.1 mA VDS = Max. Rat., VGS = 0
.01 mA VDS = Max. Rat., VGS = 0
V
DS = Max. Rat., VGS = 0,
VDS = Max. Rat., VGS = 0,
.10 mA
1.0 mA
TC = 125° C
TC = 125° C
VDS(on) Static Drain-Source
On-StateVoltage1
VDS(on) Static Drain-Source
On-State Voltage1
3.5
V
V
GS = 10 V, ID = 23 A
GS = 10 V, ID = 11.5 A
4.2
V
V
GS = 10 V, ID = 20 A
GS = 10 V, ID = 10 A
RDS(on) Static Drain-Source
OM23P06ST
.16
.12
.32
.24
RDS(on) Static Drain-Source
OM20P10ST
.20
.16
.40
.32
V
V
On-State Resistance1 OM23P06SA
On-State Resistance1 OM20P10SA
RDS(on) Static Drain-Source
On-State Resistance1
VGS = 10 V, ID = 11.5 A,
TC = 125 C
RDS(on) Static Drain-Source
On-State Resistance1
VGS = 10 V, ID = 10 A,
TC = 125 C
OM23P06ST
OM23P06SA
OM20P10ST
OM20P10SA
DYNAMIC
DYNAMIC
) W (
S(W ) VDS 2 VDS(on), ID = 11.5 A
) W (
S(W ) VDS 2 VDS(on), ID = 10 A
gfs
Forward Transductance1
5.0
gfs
Forward Transductance1
5.0
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
1700 pF VGS = 0
900 pF VDS = 25 V
400 pF f = 1 MHz
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
2000 pF VGS = 0
950 pF VDS = 25 V
400 pF f = 1 MHz
Output Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
30
ns
ns
ns
ns
45
ns
ns
ns
ns
VDD = 25 V, ID = 23 A
VDD = 25 V, ID = 10 A
170
140
120
200
150
150
RG = 13 W
RG = 50 W
td(off)
tf
Turn-Off Delay Time
Fall Time
td(off)
tf
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
D
S
D
S
23
A
20
A
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
the integral P-N
ISM
the integral P-N
75
A
80
A
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
3.5
V
V
IS = 23 A, VGS = 0
4.0
- 2
V
V
IF = 20 A, VGS = 0
- 2.5
IF = 23 A,
IF = 20 A,
200
ns
475
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM12P10ST/OM12P10SA (100V) STATIC P/N OM8P20ST/OM8P20SA (200V)
Parameter
Min. Max. Units Test Conditions
Parameter
Min. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
D = 250 mA
VDS = VGS, ID = 1.0 mA
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
100
2
V
V
200
2
V
V
I
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.5
VGS(th) Gate-Threshold Voltage
4.5
VDS = VGS, ID = 1.0 mA
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
.01 mA VDS = Max. Rat., VGS = 0
.2
mA VDS = Max. Rat., VGS = 0
V
DS = Max. Rat., VGS = 0,
VDS = Max. Rat., VGS = 0,
TC = 125° C
.10 mA
1.0 mA
TC = 125° C
VDS(on) Static Drain-Source
On-StateVoltage1
VDS(on) Static Drain-Source
On-State Voltage1
4.2
V
V
GS = 10 V, ID = 12 A
GS = 10 V, ID = 6 A
7.0
V
V
GS = 10 V, ID = 8 A
GS = 10 V, ID = 4 A
RDS(on) Static Drain-Source
OM12P10ST
.34
.30
.68
.60
RDS(on) Static Drain-Source
On-State Resistance1
OM8P20ST
OM8P20SA
OM8P20ST
OM8P20SA
.80
.75
V
V
On-State Resistance1 OM12P10SA
RDS(on) Static Drain-Source
On-State Resistance1
VGS = 10 V, ID = 6 A,
TC = 125 C
RDS(on) Static Drain-Source
On-State Resistance1
1.60
1.50
VGS = 10 V, ID = 4 A,
TC = 125 C
OM12P10ST
OM12P10SA
DYNAMIC
DYNAMIC
) W (
S(W ) VDS 2 VDS(on), ID = 6 A
) W (
S(W ) VDS 2 VDS(on), ID = 4 A
gfs
Forward Transductance1
2.0
gfs
Forward Transductance1
2.0
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
920 pF VGS = 0
575 pF VDS = 25 V
200 pF f = 1 MHz
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
1600 pF VGS = 0
400 pF VDS = 25 V
120 pF f = 1 MHz
Output Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
50
ns
ns
ns
ns
40
120
100
80
ns
ns
ns
ns
VDD = 25 V, ID = 6 A
VDD = 100 V, ID = 4 A
150
150
150
RG = 50 W
RG = 50 W
td(off)
tf
Turn-Off Delay Time
Fall Time
td(off)
tf
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
D
S
D
S
12
A
8
A
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
the integral P-N
ISM
the integral P-N
28
A
30
A
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
5.5
V
V
IF = 12 A, VGS = 0
3.0
- 2
V
V
IF = 8 A, VGS = 0
- 2.5
IF = 12 A,
IF = 8 A,
450
ns
475
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM8P25ST/OM8P25SA (250V) STATIC P/N OM2P50ST/OM2P50SA (500V)
Parameter
Min. Max. Units Test Conditions
Parameter
Min. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
D = 250 mA
VDS = VGS, ID = 250 mA
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
250
2
V
V
500
2
V
V
I
ID = 5.0 mA
VGS(th) Gate-Threshold Voltage
4.5
VGS(th) Gate-Threshold Voltage
4.5
VDS = VGS, ID = 1.0 mA
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
IGSS
IDSS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
± 100 nA VGS = ± 20 V
.20 mA VDS = Max. Rat., VGS = 0
.25 mA VDS = 425 V, VGS = 0
V
DS = 0.8 Max. Rat., VGS = 0,
VDS = 425 V, VGS = 0,
2.5 mA
1.0 mA
TC = 125° C
TC = 100° C
VDS(on) Static Drain-Source
On-StateVoltage1
VDS(on) Static Drain-Source
On-State Voltage1
18
V
V
GS = 10 V, ID = 8 A
GS = 10 V, ID = 4 A
6.1
V
V
GS = 10 V, ID = 1.0 A
GS = 10 V, ID = 1.0 A
RDS(on) Static Drain-Source
On-State Resistance1
OM8P25ST
OM8P25SA
OM8P25ST
OM8P25SA
2.08
2.00
4.16
4.00
RDS(on) Static Drain-Source
On-State Resistance1
OM2P50ST
OM2P50SA
OM2P50ST
OM2P50SA
6.1
6.0
V
V
RDS(on) Static Drain-Source
On-State Resistance1
VGS = 10 V, ID = 4 A,
TC = 125 C
RDS(on) Static Drain-Source
On-State Resistance1
12.2
12.0
VGS = 10 V, ID = 1.0 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
S(W ) VDS 2 VDS(on), ID = 4 A
) W (
S(W ) VDS 2 VDS(on), ID = 1.0 A
gfs
Forward Transductance1
3.0
gfs
Forward Transductance1
.5
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
2200 pF VGS = 0
500 pF VDS = 25 V
300 pF f = 1 MHz
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
100 pF VGS = 0
Output Capacitance
Output Capacitance
200 pF VDS = 25 V
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
80
50
pF f = 1 MHz
ns
40
100
160
90
ns
ns
ns
ns
VDD = 25 V, ID = 4 A
VDD = 125 V, ID = 1.0 A
100
150
50
ns
ns
ns
RG = 50 W
RG = 50 W
td(off)
tf
Turn-Off Delay Time
Fall Time
td(off)
tf
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
D
S
D
S
8
A
2.0
A
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
the integral P-N
ISM
the integral P-N
24
A
8.0
A
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
5
V
V
IF = 8 A, VGS = 0
1.8
- 2
V
V
IS = 2.0 A, VGS = 0
- 2.5
IF = 8 A,
IF = 2.0 A,
400
ns
125
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM23P06ST/SA - OM2P50ST/SA Series
TYPICAL ELECTRICAL CHARACTERISTICS, OM23P06
On-Region Characteristics
Gate-Threshold Variation
With Temperature
32
28
24
20
16
12
8
1.2
1.1
10V
VDS = VGS
ID = 1mA
TJ = 25°C
8V
7V
9V
1
6V
0.90
0.80
0.70
VGS = 5V
4
0
-50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
VDS, Drain-To-Source Characteristics (Volts)
TJ, Junction Temperature (°C)
Transfer Characteristics
Normalized Breakdown Voltage
verses Temperature
32
28
24
20
16
12
8
1.2
TJ = -55°C
VDS = 0V
D = 0.25mA
1.1
1
I
TJ = 150°C
TJ = 25°C
0.9
0.8
4
0
0
2
4
6
8
10
-50
0
50
100
150
VGS, Gate-To-Source Voltage (Volts)
TJ, Junction Temperature (°C)
On-Resistance verses
Drain Current
Normalized On-Resistance
verses Temperature
0.5
0.4
0.3
0.2
0.1
0
2
1.5
1
VGS = 10V
TJ = 150°C
I
D = 10A
0.5
TJ = 25°C
TJ = -55°C
3.1
0
0
4
8
12 16 20 24 28 32
-50 -25
0
25 50 75 100 125 150 175 200
ID, Drain Current (Amps)
TJ, Junction Temperature (°C)
SWITCHING TEST CIRCUIT
SWITCHING WAVEFORMS
VDD
ton
toff
tf
90%
Vin
RL
td(on)
td(off)
tr
Vout
90%
Pulse Generator
Rgen
z = 50 Ω
DUT
50 Ω
OUTPUT, Vout
10%
50 Ω
90%
50%
50%
INPUT, Vin
10%
PULSE WIDTH
INVERTED
3.1 - 35
OM23P06ST/SA - OM2P50ST/SA Series
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM23P06 OM20P10 OM12P10 OM8P20 OM8P25 OM2P50
Units
V
VDS
VDGR
ID
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Pulsed Drain Current1,2
Gate-Source Voltage
Maximum Power Dissipation
Junction-To-Case
60
60
100
100
20
100
100
12
200
200
8
250
250
8
500
500
2
V
23
A
IDM
VGS
PD
75
80
28
30
24
8
A
±20
118
1.32
±20
110
1.1
±20
72
±20
110
1.1
±20
72
±20
72
V
W
R
1.76
1.76
1.76
°C/W
JC
q
TJ
Tstg
Operating and
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
W/°C
°C
Linear Derating Factor
.76
.91
.57
.91
.57
.57
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations: TO-257AA, 15 Amps; TO-254AA, 25 Amps.
PACKAGE LIMITATIONS
Parameters
TO-257AA TO-254AA
Unit
A
ID
Continuous Drain Current
15
.015
67
25
.020
50
Linear Derating Factor, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
W/°C
°C/W
RthJA
MECHANICAL OUTLINE
.200
.190
.420
.410
.045
.035
.545
.535
.050
.040
.144 DIA.
.665
.645
.150
.140
.537
.527
.430
.410
.800
.790
.685
.665
.550
.530
.038 MAX.
.005
.750
.500
3.1
.550
.510
.005
.120 TYP.
.100 TYP.
.035
.025
.045
.035
.150 TYP.
.260
.249
.150 TYP.
TO-257AA
TO-254AA
PACKAGE OPTIONS
FET 4 FET 3
G S D G S D
D
S
G
G
S
D
D
S G G S D
FET 1
FET 2
FET 1 FET 3
Note: MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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