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OM50F60HBT [INFINEON]

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-6;
OM50F60HBT
型号： OM50F60HBT
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-6

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OM60L60HB OM45L120HB  
OM50F60HB OM35F120HB  
Preliminary Data Sheet  
HALF-BRIDGE IGBTS IN HERMETIC ISOLATED  
POWER BLOCK PACKAGES  
High Current, High Voltage 600V And 1200V,  
Up To 75 Amp IGBTs With FRED Diodes,  
Half-Bridge Configuration  
FEATURES  
• Includes Internal FRED Diode  
• Rugged Package Design  
• Solder Terminals  
• Very Low Saturation Voltage  
• Fast Switching, Low Drive Current  
• Available Screened To MIL-S-19500, TX, TXV And S Levels  
• Ceramic Feedthroughs  
DESCRIPTION  
This series of hermetically packaged products feature the latest advanced IGBT  
technology combined with a package designed specifically for high efficiency, high  
current applications. They are ideally suited for Hi-Rel requirements where small  
size, high performance and high reliability are required, and in applications such as  
switching power supplies, motor controls, inverters, choppers, audio amplifiers and  
high energy pulse circuits.  
@ 25°C (Per Switch)  
GENERAL CHARACTERISTICS  
Part  
VCE  
(V)  
IC  
3.1  
VCE(sat)  
Type  
Number  
(A)  
OM60L60HB  
OM45L120HB  
OM50F60HB  
OM35F120HB  
600  
1200  
600  
75  
70  
75  
70  
1.8 Volts  
3 Volts  
Lo Sat.  
Lo Sat.  
2.7 Volts  
4 Volts  
Hi Speed  
Hi Speed  
1200  
SCHEMATIC  
C2 E1 G2  
C1  
G1  
E2  
3.1 - 55  
4 11 R0  
OM60L60HB OM45L120HB OM50F60HB OM35F120HB  
ELECTRICAL CHARACTERISTICS: OM60L60HB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
600  
-
-
-
-
-
V
-
-
-
0.25  
1.0  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, TC = 125°C  
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±100  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 250 µA  
Collector Emitter saturation Voltage, VGE = 15 V, IC = 60 A  
VGE(th)  
2.5  
-
-
-
5.0  
1.8  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 60 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
30  
-
-
-
-
-
-
S
V
C
4000  
340  
100  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
50  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 480 V, IC = 60 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
200  
600  
500  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-On Delay Time  
Fall Time  
VCE(clamp) = 480 V, IC = 60 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
1000  
1000  
26  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 60 A, Tj = 25°C  
-
-
-
-
-
-
-
-
1.85  
1.50  
200  
14  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 60 A, Tj = 150°C  
V
R = 600 V, Tj = 25°C  
µA  
V
R = 480 V, Tj = 125°C  
mA  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
50  
nS  
VR = 30 V, Tj = 25°C  
ELECTRICAL CHARACTERISTICS: OM45L120HB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
1200  
-
-
-
-
-
V
-
-
-
3.0  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
1.2  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±100  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 4 mA  
Collector Emitter saturation Voltage, VGE = 15 V, IC = 45 A  
VGE(th)  
4.0  
-
-
-
8.0  
3.0  
V
V
3.1  
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 45 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
26  
-
-
-
-
-
-
S
V
C
4200  
290  
65  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
80  
250  
450  
1200  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 960 V, IC = 45 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-On Delay Time  
Fall Time  
VCE(clamp) = 960 V, IC = 45 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
450  
1200  
27  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 52 A, Tj = 25°C  
-
-
-
-
-
-
-
-
2.55  
2.15  
2.2  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 52 A, Tj = 150°C  
V
R = 1200 V, Tj = 25°C  
mA  
mA  
V
R = 960 V, Tj = 125°C  
14  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
60  
nS  
VR = 30 V, Tj = 25°C  
3.1 - 56  
OM60L60HB OM45L120HB OM50F60HB OM35F120HB  
ELECTRICAL CHARACTERISTICS: OM50F60HB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
600  
-
-
-
-
-
V
-
-
-
0.25  
1.0  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±100  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 250 µA  
Collector Emitter saturation Voltage, VGE = 15 V, IC = 50 A  
VGE(th)  
2.5  
-
-
-
5.0  
2.7  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 50 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
25  
-
-
-
-
-
-
S
V
C
4000  
340  
100  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
50  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 480 V, IC = 50 A,  
200  
200  
300  
Turn-Off Delay Time  
Fall Time  
RGS = 2.7 , VGS = 15 V, L = 100 µH  
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-On Delay Time  
Fall Time  
VCE(clamp) = 480 V, IC = 50 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
300  
600  
9.6  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 60 A, Tj = 25°C  
-
-
-
-
-
-
-
-
1.85  
1.50  
200  
14  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 60 A, Tj = 150°C  
V
R = 600 V, Tj = 25°C  
µA  
V
R = 480 V, Tj = 125°C  
mA  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
50  
nS  
VR = 30 V, Tj = 25°C  
ELECTRICAL CHARACTERISTICS: OM35L120HB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
1200  
-
-
-
-
-
V
-
-
-
3.0  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
1.2  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±200  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 4 mA  
Collector Emitter saturation Voltage, VGE = 15 V, IC = 35 A  
VGE(th)  
4.0  
-
-
-
8.0  
4.0  
V
V
3.1  
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 35 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
26  
-
-
-
-
-
-
S
V
C
3800  
235  
60  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
80  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 960 V, IC = 35 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
150  
400  
700  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-On Delay Time  
Fall Time  
VCE(clamp) = 960 V, IC = 35 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
400  
1100  
54  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 52 A, Tj = 25°C  
-
-
-
-
-
-
-
-
2.55  
2.15  
2.2  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 52 A, Tj = 150°C  
V
R = 1200 V, Tj = 25°C  
mA  
mA  
V
R = 960 V, Tj = 125°C  
14  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
60  
nS  
VR = 30 V, Tj = 25°C  
3.1 - 57  
OM60L60HB OM45L120HB OM50F60HB OM35F120HB  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)  
IGBT  
Parameters  
VCE  
60L60HB 45L120HB 50F60HB 35F120HB  
Units  
V
Drain Source Voltage  
Drain Gate Voltage (Rge = 20 K )  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
600  
600  
75  
1200  
1200  
70  
600  
600  
75  
1200  
1200  
70  
VCER  
V
IC @ TC = 25°C  
IC @ TJ = 90°C  
IC Pulsed  
A
60  
45  
50  
35  
A
200  
2
180  
2
200  
2
140  
2
A
Junction-To-Case  
Linear Derating Factor  
W/°C  
W/°C  
°C/W  
°C/W  
Junction-To-Ambient  
Linear Derating Factor  
Junction-To-Case  
.03  
0.5  
30  
.03  
0.5  
30  
.03  
0.5  
30  
.03  
0.5  
30  
RthJC  
RthJA  
Junction-To-Ambient  
Rectifier  
PIV  
IO  
600  
60  
1200  
52  
600  
60  
1200  
52  
V
A
trr  
35  
40  
35  
40  
nSec  
MECHANICAL OUTLINE  
2.000  
.515  
MAX.  
.250  
2 PLCS.  
1.500  
.050  
.125 DIA.  
5 PLCS.  
3.1  
1.250  
1.500  
.625  
.125  
.472  
±010  
±010  
.275  
.510  
.166 DIA.  
6 PLCS.  
±010  
.375  
.030  
.324  
.375  
.875  
1.375  
TERMINAL 1  
1.750  
.100 DIA.  
6 PLCS.  
.225  
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246  

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