OM6006SCV [INFINEON]

Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN;


型号：	OM6006SCV
厂家：	Infineon
描述：	Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN 局域网开关脉冲晶体管
文件：	总4页 (文件大小：44K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

OM6005SC OM6007SC OM6105SC OM6107SC

OM6006SC OM6008SC OM6106SC OM6108SC

POWER MOSFET IN HERMETIC ISOLATED

JEDEC TO-258AA PACKAGE

100V Thru 500V, Up To 35 Amp, N-Channel

MOSFET With Or Without Zener Gate

Clamp Protection

FEATURES

• Isolated Hermetic Metal Package

• Bi-Lateral Zener Gate Protection (Optional)

• Fast Switching, Low Drive Current

• Ease Of Paralleling For Added Power

• Low R_DS(on)

• Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener

clamps in the OM6105SC series.

MAXIMUM RATINGS

PART NUMBER

V_DS

R_DS(on)

.065

.095

0.3

I_D

OM6005SC/OM6105SC

OM6006SC/OM6106SC

OM6007SC/OM6107SC

OM6008SC/OM6108SC

100 V

200 V

400 V

500 V

35 A

30 A

15 A

13 A

3.1

0.4

Note: OM6105SC thru OM6108SC is supplied with zener gate protection.

OM6005SC thru OM6008SC is supplied without zener gate protection.

SCHEMATIC

WITHOUT ZENER CLAMPS

OM6005SC - 6008SC

WITH ZENER CLAMPS

OM6105SC - 6108SC

1 - DRAIN

3 - GATE

ZENERS

2 - SOURCE

4 11 R5

Supersedes 1 07 R4

3.1 - 75

ELECTRICAL CHARACTERISTICS: (T_C= 25°C unless otherwise noted)

STATIC P/N OM6105SC/OM6005SC (100V)

ELECTRICAL CHARACTERISTICS: (T_C= 25°C unless otherwise noted)

STATIC P/N OM6106SC/OM6006SC (200V)

Parameter

Min. Typ. Max. Units Test Conditions

Parameter

Min. Typ. Max. Units Test Conditions

BV_DSSDrain-Source Breakdown

Voltage

V_GS= 0,

BV_DSSDrain-Source Breakdown

Voltage

V_GS= 0,

100

2.0

200

2.0

I_D= 250 mA

V_GS(th)Gate-Threshold Voltage

4.0

V_DS= V_GS, I_D= 250 mA

V_GS(th)Gate-Threshold Voltage

4.0

V_DS= V_GS, I_D= 250 mA

I_GSS

I_DSS

Gate-Body Leakage (OM6105)

Gate-Body Leakage (OM6005)

Zero Gate Voltage Drain

Current

± 500 nA V_GS= ± 12.8 V

± 100 nA V_GS= ± 20 V

I_GSS

I_DSS

Gate-Body Leakage (OM6106)

Gate-Body Leakage (OM6006)

Zero Gate Voltage Drain

Current

± 500 nA V_GS= ± 12.8 V

± 100 nA V_GS= ± 20 V

0.1 0.25 mA V_DS= Max. Rat., V_GS= 0

V_DS= 0.8 Max. Rat., V_GS= 0,

_DS= 0.8 Max. Rat., V_GS= 0,

0.2 1.0 mA

0.2

1.0 mA

T_C= 125° C

I_D(on)

On-State Drain Current¹

V_DS2 V_DS(on), V_GS= 10 V

I_D(on)

On-State Drain Current¹

V_DS2 V_DS(on), V_GS= 10 V

V_DS(on)Static Drain-Source On-State

Voltage¹

V_DS(on)Static Drain-Source On-State

Voltage¹

1.1 1.3

0.55 0.65

.09 0.11

V_GS= 10 V, I_D= 20 A

1.36 1.52

.085 .095

0.14 0.17

V_GS= 10 V, I_D= 16 A

R_DS(on)Static Drain-Source On-State

Resistance¹

R_DS(on)Static Drain-Source On-State

Resistance¹

R_DS(on)Static Drain-Source On-State

Resistance¹

V_GS= 10 V, I_D= 20 A,

T_C= 125 C

R_DS(on)Static Drain-Source On-State

Resistance¹

V_GS= 10 V, I_D= 16 A,

T_C= 125 C

DYNAMIC

) W (

g_fs

Forward Transductance¹

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

9.0

2700

1300

470

S(W ) V_DS2 V_DS(on), I_D= 20 A

pF V_GS= 0

g_fs

Forward Transductance¹

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

10.0 12.5

2400

600

250

S(W ) V_DS2 V_DS(on), I_D= 16 A

pF V_GS= 0

C_iss

C_oss

C_rss

t_d(on)

t_r

C_iss

C_oss

C_rss

t_d(on)

t_r

pF V_DS= 25 V

pF f = 1 MHz

ns V_DD= 30 V, I_D@ 20 A

ns R_g= 5.0 W , V_G= 10V

pF V_DS= 25 V

pF f = 1 MHz

ns V_DD= 75 V, I_D@ 16 A

ns R_g= 5.0 W ,V_GS= 10V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

100

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I_S

Continuous Source Current

Modified MOSPOWER

I_S

Continuous Source Current

Modified MOSPOWER

symbol showing

- 40

- 30

(Body Diode)

symbol showing

(Body Diode)

I_SM

Source Current¹

the integral P-N

I_SM

Source Current¹

the integral P-N

- 160

- 2.5

- 120

- 2

(Body Diode)

Diode Forward Voltage¹

Junction rectifier.

(Body Diode)

Diode Forward Voltage¹

Junction rectifier.

V_SD

t_rr

T_C= 25 C, I_S= -40 A, V_GS= 0

T_J= 150 C, I_F= I_S,

V_SD

t_rr

T_C= 25 C, I_S= -30 A, V_GS= 0

T_J= 150 C, I_F= I_S,

Reverse Recovery Time

400

Reverse Recovery Time

350

dl_F/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

ELECTRICAL CHARACTERISTICS: (T_C= 25°C unless otherwise noted)

STATIC P/N OM6107SC/OM6007SC (400V)

ELECTRICAL CHARACTERISTICS: (T_C= 25°C unless otherwise noted)

STATIC P/N OM6108SC/OM6008SC (500V)

Parameter

Min. Typ. Max. Units Test Conditions

Parameter

Min. Typ. Max. Units Test Conditions

BV_DSSDrain-Source Breakdown

Voltage

V_GS= 0,

BV_DSSDrain-Source Breakdown

Voltage

V_GS= 0,

400

2.0

500

2.0

I_D= 250 mA

V_GS(th)Gate-Threshold Voltage

4.0

V_DS= V_GS, I_D= 250 mA

V_GS(th)Gate-Threshold Voltage

4.0

V_DS= V_GS, I_D= 250 mA

I_GSS

I_DSS

Gate-Body Leakage (OM6107)

Gate-Body Leakage (OM6007)

Zero Gate Voltage Drain

Current

± 500 nA V_GS= ± 12.8 V

± 100 nA V_GS= ± 20 V

I_GSS

I_DSS

Gate-Body Leakage (OM6108)

Gate-Body Leakage (OM6008)

Zero Gate Voltage Drain

Current

± 500 nA V_GS= ± 12.8 V

± 100 nA V_GS= ± 20 V

0.1 0.25 mA V_DS= Max. Rat., V_GS= 0

V_DS= 0.8 Max. Rat., V_GS= 0,

_DS= 0.8 Max. Rat., V_GS= 0,

0.2 1.0 mA

0.2

1.0 mA

T_C= 125° C

I_D(on)

On-State Drain Current¹

V_DS2 V_DS(on), V_GS= 10 V

I_D(on)

On-State Drain Current¹

V_DS2 V_DS(on), V_GS= 10 V

V_DS(on)Static Drain-Source On-State

Voltage¹

V_DS(on)Static Drain-Source On-State

Voltage¹

2.0 2.4

0.25 0.3

0.50 0.60

V_GS= 10 V, I_D= 8.0 A

2.1

0.3

2.8

0.4

V_GS= 10 V, I_D= 7.0 A

R_DS(on)Static Drain-Source On-State

Resistance¹

R_DS(on)Static Drain-Source On-State

Resistance¹

R_DS(on)Static Drain-Source On-State

Resistance¹

V_GS= 10 V, I_D= 8.0 A,

T_C= 125 C

R_DS(on)Static Drain-Source On-State

Resistance¹

V_GS= 10 V, I_D= 7.0 A,

T_C= 125 C

0.66 0.88

DYNAMIC

) W (

g_fs

Forward Transductance¹

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

6.0

9.6

2900

450

150

S(W ) V_DS2 V_DS(on), I_D= 8.0 A

pF V_GS= 0

g_fs

Forward Transductance¹

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

5.0 7.2

2600

280

S(W ) V_DS2 V_DS(on), I_D= 7.0 A

pF V_GS= 0

C_iss

C_oss

C_rss

t_d(on)

t_r

C_iss

C_oss

C_rss

t_d(on)

t_r

pF V_DS= 25 V

pF f = 1 MHz

ns V_DD= 200 V, I_D@ 8.0 A

ns R_g=5.0 W , V_GS=10V

pF V_DS= 25 V

pF f = 1 MHz

ns V_DD= 210 V, I_D@ 7.0 A

ns R_g= 5.0 W , V_GS= 10 V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I_S

Continuous Source Current

Modified MOSPOWER

I_S

Continuous Source Current

Modified MOSPOWER

symbol showing

- 15

- 13

(Body Diode)

symbol showing

(Body Diode)

I_SM

Source Current¹

the integral P-N

I_SM

Source Current¹

the integral P-N

- 60

- 52

(Body Diode)

Diode Forward Voltage¹

Junction rectifier.

(Body Diode)

Diode Forward Voltage¹

Junction rectifier.

V_SD

t_rr

- 1.6

T_C= 25 C, I_S= -15 A, V_GS= 0

T_J= 100 C, I_F= I_S,

V_SD

t_rr

- 1.4

T_C= 25 C, I_S= -13 A, V_GS= 0

T_J= 150 C, I_F= I_S,

Reverse Recovery Time

600

Reverse Recovery Time

700

dl_F/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

OM6005SC - OM6108SC

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C unless otherwise noted)

OM6005SC OM6006SC OM6007SC OM6008SC

OM6105SC OM6106SC OM6107SC OM6108SC

Parameter

Units

V_DS

Drain-Source Voltage

100

±35

± 25

±160

125

200

±30

±19

±120

125

400

±15

±9

500

±13

±8

V_DGR

Drain-Gate Voltage (R_GS= 1 M )

Continuous Drain Current²

Pulsed Drain Current¹

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D

±60

125

±52

125

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Junction To Case

Junction To Ambient

T_J

Maximum Power Dissipation

Linear Derating Factor¹

Linear Derating Factor

1.0

W/°C

.025

Operating and

T_stg

Storage Temperature Range

(1/16" from case for 10 secs.)

-55 to 150 -55 to 150 -55 to 150 -55 to 150

°C

Lead Temperature

300

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.

2 Package Pin Limitation = 35 Amps

THERMAL RESISTANCE (MAXIMUM) at T_A= 25°C

R_thJC

R_thJA

Junction-to-Case

1.0

°C/W

Junction-to-Ambient

°C/W Free Air Operation

MECHANICAL OUTLINE

WITH PIN CONNECTION

POWER DERATING

.270

.240

.695

.685

.165

.155

.045

.035

.835

.815

.707

.550

.530

3.1

.697

.092 MAX.

.005

.750

.500

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

.065

.055

.200 TYP.

.140 TYP.

PACKAGE OPTIONS

6 PIN SIP

MOD PAK

Z-TAB

Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.

Please call the factory for more information.

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

OM6006SCV [INFINEON]

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