OM6022SCV [INFINEON]
Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN;
| 型号： | OM6022SCV |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总1页 (文件大小：15K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6021SC OM6023SC
OM6022SC OM6024SC
POWER MOSFETS IN HERMETIC PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
Power MOSFETs In JEDEC TO-259AA Package
FEATURES
• Isolated Side-Tab Hermetic Metal Package
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM6021SC
OM6022SC
OM6023SC
OM6024SC
VDS
RDS(ON)
.065W
.095W
.3W
ID
100V
200V
400V
500V
35A
30A
15A
13A
3.1
.4W
SCHEMATIC
PIN CONNECTION
1 Drain
2 Source
3 Gate
1
2
3
4 11 R2
Supersedes 1 08 R1
3.1 - 89
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