OM6027SCTPBF [INFINEON]
Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN;
| 型号： | OM6027SCTPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6025SC OM6027SC OM6031SC
OM6026SC OM6028SC OM6032SC
POWER MOSFETS IN HERMETIC
ISOLATED JEDEC TO-258AA SIZE 6 DIE
400V Thru 1000V, Up To 26 Amp N-Channel,
Size 6 MOSFETs, High Energy Capability
FEATURES
• Isolated Hermetic Metal Package
• Size 6 Die, High Energy
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
VDS
400
RDS(ON)
.20
ID (Amp)
24
3.1
OM6025SC/OM6032SC
OM6026SC/OM6031SC
OM6027SC/OM6028SC
500
.27
22
1000
1.30
10
SCHEMATIC
4 11 R2
Supersedes 1 07 R1
3.1 - 97
OM6025SC - OM6032SC
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM6025SC OM6026SC OM6027SC Units
OM6032SC OM6031SC OM6028SC
VDS
Drain-Source Voltage
400
400
24
500
500
22
1000
1000
10
V
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current
Pulsed Drain Current
ID @ TC = 25°C
IDM
A
92
85
40
A
PD @ TC = 25°C
Maximum Power Dissipation
Derate Above 25°C Ambient
Single Pulse Energy
165
.025
165
.025
165
.025
W
W/°C
WDSS (1)
Drain To Source @ 25°C
Operating and
1000
1200
1000
mJ
TJ
Tstg
Storage Temperature Range
-55 to 150
275
-55 to 150
275
-55 to 150
275
°C
°C
Lead Temperature (1/8" from case for 5 secs.)
Note 1: VDD = 50V, ID = as noted
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC
RthJA
Junction-to-Case
.76
40
°C/W
°C/W
W/°C
Junction-to-Ambient
Derate above 25°C TC
Free Air Operation
1.32
MECHANICAL OUTLINES
.270
.240
.695
.685
.250
TYP.
.165
.125
2 PLACES
.695
.685
.045
.045
.035
.155
.035
.250 TYP.
.550
.530
.285
.835
.815
1. 25 TYP.
.707
.697
.550
.530
3.1
.500
MIN.
.005
.200
.145
REF.
.092 MAX.
.005
.140
±.002
.060 DIA. TYP.
3 PLACES
.750
.500
.400
.940
.270
MAX.
.065
.055
.200 TYP.
.140 TYP.
OM6028SC, OM6031SC, OM6032SC
OM6025SC, OM6026SC, OM6027SC
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
3.1 - 98
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS: OM6025SC, OM6032SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
V(BR)DSS
IDSS
400
-
-
Vdc
mAdc
(VDS = 400 V, VGS = 0)
-
-
-
-
-
-
-
-
0.25
1.0
(VDS = 400 V, VGS = 0, TJ = 125° C)
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
IGSSF
IGSSR
100
100
nAdc
nAdc
Gate-Threshold Voltage
VGS(th)
Vdc
(VDS = VGS, ID = 0.25 mAdc
2.0
1.5
-
3.0
4.0
3.5
(TJ = 125° C)
-
-
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 24 A)
rDS(on)
0.20
Ohm
Vdc
VDS(on)
-
-
-
-
-
5.4
5.4
-
(ID = 12 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)
DYNAMIC CHARACTERISTICS
gFS
14
mhos
pF
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
-
-
-
5600
78
-
-
-
230
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
70
190
160
160
110
20
-
ns
Rise Time
(VDD = 250 V, ID = 24 A,
-
Turn-Off Delay Time
Fall Time
Rgen = 4.3 ohms)
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 24 A,
VGS = 10 V)
Qg
140
nC
Qgs
Qgd
-
-
55
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
VSD
ton
trr
-
-
1.1
1.6
Vdc
ns
Forward Turn-On Time
Reverse Recovery Time
(IS = 24 A, d/dt = 100 A/µs)
**
500
1000
ELECTRICAL CHARACTERISTICS: OM6026SC, OM6031SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
V(BR)DSS
IDSS
500
-
-
Vdc
mAdc
(VDS = 500 V, VGS = 0)
-
-
-
-
-
-
-
-
0.25
1.0
(VDS = 500 V, VGS = 0, TJ = 125° C)
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
IGSSF
IGSSR
100
100
nAdc
nAdc
Gate-Threshold Voltage
VGS(th)
Vdc
(VDS = VGS, ID = 0.25 mAdc
2.0
1.5
-
3.0
4.0
3.5
3.1
(TJ = 125° C)
-
-
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 22 A)
rDS(on)
0.27
Ohm
Vdc
VDS(on)
-
-
-
-
-
8.0
8.0
-
(ID = 11 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc)
DYNAMIC CHARACTERISTICS
gFS
13
mhos
pF
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
-
-
-
5600
680
-
-
-
200
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
tr
Td(off)
tf
-
-
-
-
-
-
-
70
190
160
160
115
20
-
ns
Rise Time
(VDD = 250 V, ID = 22 A,
-
Turn-Off Delay Time
Fall Time
Rgen = 4.3 ohms)
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 22 A,
VGS = 10 V)
Qg
140
nC
Qgs
Qgd
-
-
60
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
VSD
ton
trr
-
-
1.1
1.6
Vdc
ns
Forward Turn-On Time
Reverse Recovery Time
(IS = 22 A, d/dt = 100 A/µs)
**
500
1000
*
Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1 - 99
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS: OM6027SC, OM6028SC (T = 25° unless otherwise noted)
C
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V = 0, I = 0.25 mA)
V
(BR)DSS
1000
-
-
Vdc
GS
D
Zero Gate Voltage Drain
(V = 1000 V, V = 0)
I
mAdc
DSS
-
-
-
-
-
-
-
-
0.25
1.0
DS
GS
(V = 1000 V, V = 0, T = 125° C)
DS
GS
J
Gate-Body Leakage Current, Forward (V
Gate-Body Leakage Current, Reverse (V
ON CHARACTERISTICS*
Gate-Threshold Voltage
= 20 Vdc, V = 0)
I
100
100
nAdc
nAdc
GSF
DS
GSSF
= 20 Vdc, V = 0)
I
GSR
DS
GSSR
V
Vdc
GS(th)
(V = V , I = 0.25 mAdc
2.0
1.5
-
3.0
4.0
3.5
1.3
DS
GS D
(T = 125° C)
-
-
J
Static Drain-Source On-Resistance (V = 10 Vdc, I = 5 Adc)
r
Ohm
Vdc
GS
D
DS(on)
Drain-Source On-Voltage (V = 10 Vdc)
V
DS(on)
GS
(I = 10 A)
-
-
-
-
-
15
15.3
-
D
(I = 5 A, T = 125° C)
D
J
Forward Transconductance (V = 15 Vdc, I = 5 Adc)
g
FS
5.0
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V = 25 V, V = 0,
C
-
-
-
3900
300
65
-
-
-
DS
GS
iss
f = 1.0 MHz)
C
oss
C
rss
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
-
-
-
-
-
-
-
40
100
100
100
100
20
-
ns
d(on)
Rise Time
(V = 250 V, I = 5 A,
t
r
-
DD
D
Turn-Off Delay Time
Fall Time
R
= 4.3 ohms)
t
-
gen
d(off)
t
-
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V = 400 V, I = 10 A,
Q
g
140
nC
DS
D
V
= 10 V)
Q
-
-
GS
gs
gd
Q
40
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
-
-
-
1.5
Vdc
ns
SD
Forward Turn-On Time
Reverse Recovery Time
(I = 10 A, d/dt = 100 A/µs)
t
on
S
**
600
t
1000
rr
*
Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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