OM6050SJ1 [INFINEON]
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN;![OM6050SJ1](http://pdffile.icpdf.com/pdf2/p00240/img/icpdf/OM6054SJ1_1450634_icpdf.jpg)
型号: | OM6050SJ1 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总2页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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OM6050SJPBF
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, TO-267, 3 PIN
INFINEON
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OM6050SJTPBF
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6051SJ1
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6051SJT
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6051SJV
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6052SJ1
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6052SJT
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6052SJV
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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OM6053SJ1
Power Field-Effect Transistor, 25A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN
INFINEON
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