OM6054SJ1 [INFINEON]

Power Field-Effect Transistor, 18A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN;


型号：	OM6054SJ1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 18A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN 局域网开关脉冲晶体管
文件：	总2页 (文件大小：64K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

OM6054SJT

Power Field-Effect Transistor, 18A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN

INFINEON

OM6055SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

INFINEON

OM6055SJ1

Power Field-Effect Transistor, 10A I(D), 1000V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN

INFINEON