OM6505SA [INFINEON]
Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN;
| 型号： | OM6505SA |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6505SA
OM6506SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Low Conductive Losses
• Ceramic Feedthroughs Available
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
NUMBER
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
°C/W
PD
W
TJ
°C
OM6505SA
OM6506SA
15
20
500
500
2.8
2.8
400
400
1.75
1.00
72
150
150
125
3.1
SCHEMATIC
MECHANICAL OUTLINE
.545
.535
.050
.040
.144 DIA.
Collector
.800
.790
.685
.665
.550
.530
1
2
3
C
E
G
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Gate
.550
.510
.005
Pin 3: Gate
.045
.035
.150 TYP.
Emitter
.260
.249
.150 TYP.
PACKAGE OPTIONS
6 PIN SIP
Z-TAB
MOD PAK
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 143
PRELIMINARY DATA: OM6505SA
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6506SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
C = 250 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
C = 250 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 100°C
±100 nA VGE = ±20 V
CE = 0 V
025Craw
I
I
ICES
Zero Gate Voltage
Drain Current
ICES
Zero Gate Voltage
Drain Current
V
V
o
S
T
T
e
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
,
V
V
Parameter - ON
Parameter - ON
nitsr,eAM10
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
5.0
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 15 A
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
8.0
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 20 A
3.0
3.0
T
C = 25°C
VGE = 15 V, IC = 15 A
C = 100°C
T
C = 25°C
VGE = 15 V, IC = 20 A
C = 100°C
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
S
(
T
T
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 15 A
gfs
Forward Transductance
Input Capacitance
VCE = 15 V, IC = 20 A
Cies
Coes
Cres
1700
215
pF VGE = 0
Cies
Coes
Cres
3500 pF VGE = 0
)8354
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
250 pF VCE = 25 V
Reverse Transfer Capacitance
115
Reverse Transfer Capacitance
50
pF f = 1 mHz
5-7
Switching-Resistive Load
Switching-Resistive Load
67FXA(5)0835-426
Td(on)
tr
Turn-On Time
Rise Time
60
nS VCC = 400 V, IC = 15 A
nS VGE = 15 V, Rg = 47
Td(on)
tr
Td(off)
tf
Turn-On Time
Rise Time
100 nS VCC = 400 V, IC = 20 A
200 nS VGE = 15 V, Rg = 100
240
Switching-Inductive Load
Turn-Off Delay Time
Fall Time
1.0
2.0
µS Tj = 125°C
µS
tr(Volt)
tf
Off Voltage Rise Time
Fall Time
.55
.60
1.2
3.0
µS VCEclamp = 400 V, IC = 15 A
µS VGE = 15 V, Rg = 100
µS L = 0.1 mH, Tj = 100°C
mJ
Switching-Inductive Load
tcross
Eoff
Cross-Over Time
Turn-Off Losses
Td(off)
tr
Turn-Off Delay Time
Current Fall Time
1.0
3.0
nS VCEclamp = 400 V, IC = 20 A
µS VGE = 15 V, Rg = 100
L = 0.1 mH, Tj = 125°C
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