OM6533SFT [INFINEON]
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-6;
| 型号： | OM6533SFT |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-6 局域网 栅 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6533SF
OM6534SF
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC PACKAGE
1000 Volt, 50 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diodes
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
NUMBER
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
°C/W
PD
W
TJ
°C
3.1
OM6533SF
OM6534SF
50
50
1000
1000
4.0
4.0
300
300
.50
.50
250
250
150
150
SCHEMATICS
MECHANICAL OUTLINE
2.000
1.750
Collector
Collector
.350
1.500
Gate
Gate
C
E
G
G
Emitter
Emitter
1.500
1.250
OM6533SF
OM6534SF
(with Diode)
C
E
.150 DIA.
4 PLCS.
.750
.500
PACKAGE OPTIONS
NOTE:
.475
.050
.200
IGBTs are also
available in
Z-Tab, single
and quad pak
styles. Please
call the factory
for more
.060 DIA.
6 PLCS.
.400
.800
Contact factory for pinout confirmation.
information.
MOD PAK
6 PIN SIP
4 11 R2
Supersedes 2 07 R1
3.1 - 169
PRELIMINARY DATA: OM6533SF
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6534SF
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF (see Note 1)
V(BR)CES Collector Emitter
Breakdown Voltage
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
1000
V
VCE = 0
C = 1 mA
1.0 mA VCE = Max. Rat., VGE = 0
4.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
1000
V
VCE = 0
C = 1 mA
1.0 mA VCE = Max. Rat., VGE = 0
4.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
I
I
ICES
Zero Gate Voltage
Drain Current
ICES
Zero Gate Voltage
Drain Current
V
V
025Craw
T
T
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
V
V
o
S
Parameter - ON
Parameter - ON
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
6.5
V
V
VCE = VGE, IC = 4 mA
VGE = 15 V, IC = 50 A
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
6.5
V
V
VCE = VGE, IC = 4 mA
VGE = 15 V, IC = 50 A
e
,
3.0
3.0
T
C = 25°C
VGE = 15 V, IC = 50 A
C = 150°C
T
C = 25°C
VGE = 15 V, IC = 50 A
C = 150°C
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
nitsr,eAM10
T
T
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
22
S
VCE = 20 V, IC = 50 A
gfs
Forward Transductance
Input Capacitance
22
S
VCE = 20 V, IC = 50 A
Cies
Coes
Cres
8000
640
pF VGE = 0
Cies
Coes
Cres
8000
640
pF VGE = 0
35USA(0
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Reverse Transfer Capacitance
250
Reverse Transfer Capacitance
250
Switching-Resistive Load
Switching-Resistive Load
)8354
Td(on)
tr
Turn-On Time
Rise Time
100
300
250
300
nS VCC = 600 V, IC = 50 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
Td(on)
tr
Turn-On Time
Rise Time
100
300
250
300
nS VCC = 600 V, IC = 50 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
5-7
Td(off)
tf
Turn-Off Delay Time
Fall Time
Td(off)
tf
Turn-Off Delay Time
Fall Time
67FXA(5)0835-426
nS
nS
Switching-Inductive Load
Switching-Inductive Load
Td(off)
tf
Turn-Off Delay Time
Fall Time
250
200
4.0
nS VCEclamp = 600 V, IC = 50 A
nS VGE = 15 V, Rg = 3.3
Td(off)
tf
Turn-Off Delay Time
Fall Time
250
200
4.0
nS VCEclamp = 600 V, IC = 50 A
nS VGE = 15 V, Rg = 3.3
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
DIODE CHARACTERISTICS
Vf
Ir
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
1.8
1.6
.5
V
V
IF = 50 A, TC = 25°C
IF = 50 A, TC = 125°C
mA VR = 1000 V, TC = 25°C
R = 1000 V, TC = 125°C
4.0 mA
V
trr
200 nS IF = 50 A, di / dt = -800 A µ/S
VR = 600 V, T = 125°C, VGE = 0
j
Note 1: Limited by diode Ir characteristic.
相关型号：
OM6534SFV
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-6
INFINEON
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