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OM90L120SBV [INFINEON]

Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3;
OM90L120SBV
型号： OM90L120SBV
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3

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OM120L60SB OM90L120SB  
OM100F60SB OM70F120SB  
Preliminary Data Sheet  
IGBTS IN HERMETIC ISOLATED POWER  
BLOCK PACKAGES  
High Current, High Voltage 600V And 1200V,  
Up To 150 Amp IGBTs With FRED Diodes  
FEATURES  
• Includes Internal FRED Diode  
• Rugged Package Design  
• Solder Terminals  
• Very Low Saturation Voltage  
• Fast Switching, Low Drive Current  
• Available Screened To MIL-S-19500, TX, TXV And S Levels  
• Ceramic Feedthroughs  
DESCRIPTION  
This series of hermetically packaged products feature the latest advanced IGBT  
technology combined with a package designed specifically for high efficiency, high  
current applications. They are ideally suited for Hi-Rel requirements where small  
size, high performance and high reliability are required, and in applications such as  
switching power supplies, motor controls, inverters, choppers, audio amplifiers and  
high energy pulse circuits.  
@ 25°C  
GENERAL CHARACTERISTICS  
Part  
VCE  
(V)  
IC  
3.1  
VCE(sat)  
Type  
Number  
(A)  
OM120L60SB  
OM90L120SB  
OM100F60SB  
OM70F120SB  
600  
1200  
600  
150  
140  
150  
140  
1.8 Volts  
3 Volts  
Lo Sat.  
Lo Sat.  
2.7 Volts  
4 Volts  
Hi Speed  
Hi Speed  
1200  
SCHEMATIC  
C
E
G
3.1 - 9  
4 11 R0  
OM120L60SB OM90L120SB OM100F60SB OM70F120SB  
ELECTRICAL CHARACTERISTICS: OM120L60SB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 500 µA, VCE = 0 V  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
600  
-
-
-
-
-
V
-
-
-
0.5  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
2.0  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±200  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA  
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 120 A  
VGE(th)  
2.5  
-
-
-
5.0  
1.8  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 120 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
50  
-
-
-
-
-
-
S
V
C
8000  
680  
200  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
50  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 480 V, IC = 120 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
200  
600  
500  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-Off Delay Time  
Fall Time  
VCE(clamp) = 480 V, IC = 120A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
1000  
1000  
52  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 120 A, Tj = 25°C  
-
-
-
-
-
-
-
-
1.85  
1.50  
500  
28  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 120 A, Tj = 125°C  
V
R = 600 V, TC = 25°C  
µA  
V
R = 800 V, TC = 125°C  
mA  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
50  
nS  
VR = 30 V, Tj = 25°C  
ELECTRICAL CHARACTERISTICS: OM90L120SB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
1200  
-
-
-
-
-
V
-
-
-
0.6  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
2.4  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±200  
ON CHARACTERISTICS  
3.1  
Gate-Threshold Voltage, VCE = VGE, IC = 8 mA  
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 90 A  
VGE(th)  
4.0  
-
-
-
8.0  
3.0  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 6 V, IC = 90 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
50  
-
-
-
-
-
-
S
V
C
8500  
400  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
2400  
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
80  
250  
450  
1200  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 960 V, IC = 90 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-Off Delay Time  
Fall Time  
VCE(clamp) = 960 V, IC = 90 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
450  
1200  
54  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 105 A, Tj = 25°C  
-
-
-
-
-
-
-
-
2.55  
2.15  
4.4  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 105 A, Tj = 125°C  
V
R = 1200 V, TC = 25°C  
mA  
mA  
V
R = 960 V, TC = 125°C  
28  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
60  
nS  
VR = 30 V, Tj = 25°C  
3.1 - 10  
OM120L60SB OM90L120SB OM100F60SB OM70F120SB  
ELECTRICAL CHARACTERISTICS: OM100F60SB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 500 µA, VCE = 0 V  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
600  
-
-
-
-
-
V
-
-
-
0.5  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
2.0  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±200  
ON CHARACTERISTICS  
Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA  
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 100 A  
VGE(th)  
2.5  
-
-
-
5.0  
2.7  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 100 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
50  
-
-
-
-
-
-
S
V
C
8000  
680  
200  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
50  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 480 V, IC = 100 A,  
200  
200  
300  
Turn-Off Delay Time  
Fall Time  
RGS = 2.7 , VGS = 15 V, L = 100 µH  
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-Off Delay Time  
Fall Time  
VCE(clamp) = 480 V, IC = 100 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
300  
600  
1.5  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 120 A, Tj = 25°C  
-
-
-
-
-
-
-
-
1.85  
1.50  
400  
28  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 120 A, Tj = 150°C  
V
R = 600 V, TC = 25°C  
µA  
V
R = 480 V, TC = 125°C  
mA  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
50  
nS  
VR = 30 V, Tj = 25°C  
ELECTRICAL CHARACTERISTICS: OM70L120SB (TC = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V  
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.  
V(BR)CES  
ICES  
1200  
-
-
-
-
-
V
-
-
-
0.6  
mA  
mA  
nA  
VCE = 0.8 Max. Rat., VGE = 0, T = 125°C  
2.4  
j
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V  
IGES  
±200  
ON CHARACTERISTICS  
3.1  
Gate-Threshold Voltage, VCE = VGE, IC = 8 mA  
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 70 A  
VGE(th)  
4.0  
-
-
-
8.0  
4.0  
V
V
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Forward Transconductance  
Input Capacitance  
VCE = 10 V, IC = 70 A  
GE = 0,  
CE = 25 V,  
f = 1.0 mHz  
gfs  
50  
-
-
-
-
-
-
S
V
C
7600  
800  
120  
pF  
pF  
pF  
iss  
Output Capacitance  
V
Coss  
Crss  
-
Reverse Transfer Capacitance  
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
80  
-
-
-
-
nS  
nS  
nS  
nS  
Rise Time  
V
CC = 960 V, IC = 70 A,  
GS = 2.7 , VGS = 15 V,  
L = 100 µH  
150  
400  
700  
Turn-Off Delay Time  
Fall Time  
R
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS  
Turn-Off Delay Time  
Fall Time  
VCE(clamp) = 600 V, IC = 70 A  
GE = 15 V, Rg = 2.7  
L = 100 µH, T = 125°C  
td(on)  
tf  
-
-
-
400  
1100  
110  
-
-
-
nS  
nS  
V
Turn-Off Losses  
E(OFF)  
m Ws  
j
SOURCE DRAIN DIODE CHARACTERISTICS  
I
F = 105 A, Tj = 25°C  
-
-
-
-
-
-
-
-
2.55  
2.15  
4.4  
Maximum Forward Voltage  
Maximum Reverse Current  
Reverse Recovery Time  
Vf  
Ir  
V
IF = 105 A, Tj = 125°C  
V
R = 1200 V, TC = 25°C  
mA  
mA  
V
R = 960 V, TC = 125°C  
28  
I
F = 1 A, di/dt = 200 A µ/S  
trr  
-
-
60  
nS  
VR = 30 V, Tj = 25°C  
3.1 - 11  
OM120L60SB OM90L120SB OM100F60SB OM70F120SB  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)  
IGBT  
Parameters  
VCE  
120L60SB 90L120SB 100F60SB 70F120SB  
Units  
V
Drain Source Voltage  
Drain Gate Voltage (Rge = 20 K )  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
600  
600  
150  
120  
400  
3.33  
.03  
1200  
1200  
140  
90  
600  
600  
150  
100  
400  
3.33  
.03  
1200  
1200  
140  
70  
VCER  
V
IC @ TC = 25°C  
IC @ TC = 90°C  
IC Pulsed  
A
A
360  
3.33  
.03  
280  
3.33  
.03  
A
Junction-To-Case  
Linear Derating Factor  
W/°C  
W/°C  
°C/W  
°C/W  
Junction-To-Ambient  
Linear Derating Factor  
Junction-To-Case  
RthJC  
RthJA  
0.3  
0.3  
0.3  
0.3  
Junction-To-Ambient  
30  
30  
30  
30  
Rectifier  
PIV  
IO  
600  
120  
35  
1200  
105  
40  
600  
120  
35  
1200  
105  
40  
V
A
trr  
nSec  
MECHANICAL OUTLINE  
2.000  
.515  
MAX.  
.250  
2 PLCS.  
1.500  
.050  
.125 DIA.  
5 PLCS.  
1.250  
.472  
1.500  
3.1  
C
E
G
.625  
.125  
.±501100  
.030  
±010  
.275  
.166 DIA.  
3 PLCS.  
±010  
.375  
.324  
.375  
.875  
TERMINAL 1  
1.375  
1.750  
.100 DIA.  
3 PLCS.  
.225  
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246  

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