OMD500T [INFINEON]
Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, MOD, 12 PIN;
| 型号： | OMD500T |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, MOD, 12 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OMD100 OMD400
OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
PART NUMBER
OMD100
VDS
RDS(on)
.08
ID
100V
200V
400V
500V
25A
25A
13A
11A
OMD200
.11
OMD400
.35
3.1
OMD500
.43
SCHEMATIC
CONNECTION DIAGRAM
FET
S
4
FET
S
3
G
D
G
D
1.520
.150
.500
MIN.
.260
45°
REF
.170 R.
TYP.
1.000
SQ.
.156 DIA.
TYP.
.040 LEAD
DIA.
.125
(10 PLCS)
.050
.187
TYP.
.270
D
S
G
G
S
D
.625
FET
1
FET 3
4 11 R2
Supersedes 1 07 R1
3.1 - 1
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD100 (100V)
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD200 (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
100
2.0
V
V
200
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = -20 V
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = + 20 V
-100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
35
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
30
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
1.1 1.60
.065 .080
.10 .160
V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A
1.36 1.76
.085 .110
0.14 .200
V
VGS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 20 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
9.0
10
2700
1300
470
28
S(W ) VDS 2 VDS(on), ID = 20 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
10.0 12.5
2400
600
250
25
S(W ) VDS 2 VDS(on), ID = 16 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
ns VDD = 30 V, ID @ 20 A
ns Rg = 5.0 W , VG = 10V
ns VDD = 75 V, ID @ 16 A
ns Rg = 5.0 W ,VGS = 10V
45
60
(MOSFET switching times are
ns
(MOSFET switching times are
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
100
50
td(off)
tf
Turn-Off Delay Time
Fall Time
85
essentially independent of
essentially independent of
operating temperature.)
operating temperature.)
ns
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 40
A
- 30
A
(Body Diode)
symbol showing
(Body Diode)
G
G
ISM
Source Current1
the integral P-N
ISM
Source Current1
the integral P-N
- 160
- 2.5
A
V
- 120
- 2
A
V
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
TC = 25 C, IS = -40 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
trr
TC = 25 C, IS = -30 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
400
ns
Reverse Recovery Time
350
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD400 (400V)
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD500 (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
400
2.0
V
V
500
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
15
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
13
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
2.0 2.8
0.30 .35
.60 .70
V
VGS = 10 V, ID = 8.0 A
VGS = 10 V, ID = 8.0 A
2.1
3.0
V
VGS = 10 V, ID = 7.0 A
VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
0.35 0.43
0.66 0.88
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 8.0 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0
9.6
2900
450
150
30
S(W ) VDS 2 VDS(on), ID = 8.0 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0 7.2
2600
280
40
S(W ) VDS 2 VDS(on), ID = 7.0 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
ns VDD = 200 V, ID @ 8.0 A
ns Rg =5.0 W , VGS =10V
30
ns VDD = 210 V, ID @ 7.0 A
ns Rg = 5.0 W , VGS = 10 V
40
46
(MOSFET switching times are
ns
(MOSFET switching times are
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
80
td(off)
tf
Turn-Off Delay Time
Fall Time
75
essentially independent of
essentially independent of
operating temperature.)
operating temperature.)
30
ns
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 15
A
- 13
A
(Body Diode)
symbol showing
(Body Diode)
G
G
ISM
Source Current1
the integral P-N
ISM
Source Current1
the integral P-N
- 60
A
V
- 52
A
V
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
- 1.6
TC = 25 C, IS = -15 A, VGS = 0
TJ = 100 C, IF = IS,
VSD
trr
- 1.4
TC = 25 C, IS = -13 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
600
ns
Reverse Recovery Time
700
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OMD100 - OMD500
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OMD100
100
OMD200 OMD400 OMD500 Units
VDS
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
200
200
± 25
± 16
± 80
± 20
125
50
400
400
± 13
±.8
500
500
± 11
± 7
V
V
VDGR
100
2
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current
± 25
± 16
± 100
± 20
125
A
2
Continuous Drain Current
A
1
Pulsed Drain Current
± 54
± 20
125
50
± 40
±20
125
50
A
VGS
Gate-Source Voltage
V
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
50
W
1.0
1.0
1.0
1.0
W/°C
W/°C
Junction To Ambient Linear Derating Factor
.033
.033
.033
.033
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
RthJC
RthJA
Junction-to-Case
1.0
30
°C/W
°C/W
Junction-to-Ambient
Free Air Operation
POWER DERATING
3.1
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
相关型号：
OMD500V
Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, MOD, 12 PIN
INFINEON
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