P-TO262-3-1 [INFINEON]
SIPMOS㈢ Power-Transistor; SIPMOS㈢功率三极管
| 型号： | P-TO262-3-1 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS㈢ Power-Transistor |
| 文件： | 总8页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
SIPMOS Power-Transistor
Feature
Product Summary
V
100
26
V
m
A
DS
N-Channel
R
DS(on)
Enhancement mode
Logic Level
I
47
D
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
175°C operating temperature
Avalanche rated
dv/dt rated
Type
Package
Ordering Code
Marking
47N10L
47N10L
47N10L
SPP47N10L
SPB47N10L
SPI47N10L
P-TO220-3-1 Q67040-S4177
P-TO263-3-2 Q67040-S4176
P-TO262-3-1 Q67060-S7432
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
47
33
C
T =100°C
C
188
Pulsed drain current
I
D puls
T =25°C
C
400
mJ
Avalanche energy, single pulse
E
AS
I =47 A , V =25V, R =25
D
DD
GS
E
17.5
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =47A, V =0V, di/dt=200A/µs
S
DS
Gate source voltage
Power dissipation
V
V
±20
175
GS
P
W
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
R
R
-
-
-
-
0.85 K/W
62
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
thJA
thJA
-
-
-
-
62
40
2
F)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
100
1.2
typ. max.
Static Characteristics
V
-
-
V
Drain-source breakdown voltage
(BR)DSS
V
=0V, I =2mA
D
GS
1.6
2
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I = 2 mA
D
µA
Zero gate voltage drain current
I
DSS
V
=100V, V =0V, T =25°C
-
-
0.1
-
1
DS
GS
j
V
=100V, V =0V, T =150°C
100
DS
GS
j
-
-
-
10
25
18
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
40
26
Drain-source on-state resistance
R
m
DS(on)
V
=4.5V, I =33A
D
GS
Drain-source on-state resistance
R
DS(on)
V
=10V, I =33A
D
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
V
2*I *R ,
DS(on)max
18
36
-
S
fs
DS
D
I =33A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
-
-
-
-
-
-
-
2000 2500 pF
iss
GS
DS
C
f=1MHz
375
210
50
470
265
75
oss
C
rss
t
V
=50V, V =4.5V,
ns
d(on)
DD
GS
I =47A, R =2
t
100
50
150
75
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
70
105
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=80V, I =47A
-
-
-
8
12
24
nC
gs
gd
g
DD
D
Gate to drain charge
16
90
V
=80V, I =47A,
135
Gate charge total
DD
D
V
=0 to 10V
GS
V
=80V, I =47A
-
3.38
-
V
A
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
-
-
-
-
47
188
1.5
Inverse diode continuous
forward current
I
S
C
Inverse diode direct current,
pulsed
I
SM
V
=0V, I =94A
-
-
-
1.1
80
V
Inverse diode forward voltage V
GS
F
SD
Reverse recovery time
t
V =50V, I =l ,
120 ns
510 nC
rr
R
F S
Reverse recovery charge
Q
di /dt=100A/µs
340
rr
F
Page 3
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V
10 V
GS
SPP47N10L
SPP47N10L
190
W
55
A
160
140
120
100
80
45
40
35
30
25
20
15
10
5
60
40
20
0
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
10 3
SPP47N10L
SPP47N10L
K/W
A
10 0
t
= 7.1µs
10 µs
p
10 2
10 -1
D = 0.50
0.20
100 µs
10 -2
10 1
0.10
0.05
1 ms
0.02
10 -3
0.01
10 ms
single pulse
DC
10 0
10 -1
10 -4
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Page 4
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
GS
p
SPP47N10L
Ptot = 175W
SPP47N10L
130
120
A
m
b
c
d
e
V
[V]
GS
a
110
100
90
80
70
60
50
40
30
20
10
0
k
j
l
100
90
80
70
60
50
40
30
20
10
0
i
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
h
g
f
b
c
d
e
f
e
g
h
i
d
j
c
k
l
f
g
h
j
b
i
k
l
V
[V] =
c
GS
b
d
e
f
g
h
i
j
k
l
3.0 3.5 4.0 4.5 5.0
5.5 6.0 6.5 7.0
8.0 10.0
a
0
1
2
3
4
5.5
0
10 20 30 40 50 60 70 80
100
V
A
I
V
D
DS
7 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
60
A
60
S
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
0
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
10
20
30
40
55
I
V
GS
D
Page 5
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
9 Drain-source on-state resistance
= f (T )
10 Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 33 A, V = 4.5 V
parameter: V = V , I = 2 mA
GS DS D
D
GS
SPP47N10L
170
3
V
m
140
120
100
80
2.4
2.2
2
1.8
1.6
1.4
1.2
1
max
typ
60
98%
0.8
0.6
0.4
0.2
0
40
typ
min
20
0
°C
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
140
200
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 4
10 3
SPP47N10L
A
pF
10 2
C
iss
10 3
10 1
Tj = 25 °C typ
C
C
oss
rss
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
10 0
V
0
5
10
15
20
25
30
40
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
DS
SD
Page 6
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = 47 A , V = 25 V, R = 25
parameter: I = 47 A pulsed
D
DD
GS
D
SPP47N10L
400
16
mJ
V
320
280
240
200
160
120
80
12
10
V
0,2
DS max
0,8 VDS max
8
6
4
2
0
40
0
25
45
65
85 105 125 145
185
0
20
40
60
80
100 120
150
Gate
°C
nC
Q
T
j
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP47N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
200
°C
T
j
Page 7
2002-01-09
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP47N10L, BSPB47N10L and BSPI47N10L, for
simplicity the device is referred to by the term SPP47N10L, SPB47N10L and SPI47N10L
throughout this documentation
Page 8
2002-01-09
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