P103W [INFINEON]
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS; 钝化组装的电路元件
| 型号： | P103W |
| 厂家： | 
Infineon |
| 描述： | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| 文件： | 总7页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27125 rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
25A
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
ID
P100
25
Units
A
@ TC
85
°C
IFSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
357
375
637
580
6365
A
A
I2t
A2s
A2s
A2√s
I2√t
VRRM
400 to 1200
2500
V
V
V
INS
TJ
- 40 to 125
°C
1
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P100 Series
Bulletin I27125 rev. A 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximumrepetitive VRSM maximumnon-
VDRM maximum
IRRMmax.
@ TJ max.
Typenumber
peak reverse voltage
repetitive peak reverse repetitive peak off-state
voltage
voltage
V
V
V
mA
10
P101, P121, P131
P102, P122, P132
P103, P123, P133
P104, P124, P134
P105, P125, P135
400
500
700
400
600
600
800
900
800
1000
1200
1100
1300
1000
1200
On-state Conduction
Parameter
P100
Units Conditions
ID
Maximum DC output current
25
A
@ TC = 85°C, full bridge
ITSM
Max. peak one-cycle
non-repetitive on-state
or forward current
357
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
IFSM
375
300
315
reapplied
100% VRRM
reapplied
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
637
580
450
410
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
A2s
I2√t
Maximum I2√t for fusing
6365
A2√s
t = 0.1 to 10ms, no voltage reapplied
I2t for time tx = I2√t . √tx
VT(TO) Max. value of threshold voltage
0.82
12
V
TJ = 125°C
rt1
Max. level value of on-state
slope resistance
2
mΩ
TJ = 125°C, Av. power = VT(TO) * IT(AV) + rt + (IT(RMS))
VTM
VFM
Max. peak on-state or
forward voltage drop
1.35
200
V
TJ = 25°C, ITM = π x IT(AV)
di/dt
Maximum non repetitive rate of
rise of turned on current
TJ = 125°C from 0.67 VDRM
A/µs
ITM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs
IH
IL
Maximum holding current
Maximum latching current
130
250
mA
mA
TJ = 25°C anode supply = 6V, resistive load, gate open
TJ = 25°C anode supply = 6V, resistive load
2
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P100 Series
Bulletin I27125 rev. A 04/99
Blocking
Parameter
P100
200
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = 125°C, exponential to 0.67 VDRM gate open
IRRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current at VRRM, VDRM
10
mA
µA
TJ = 125°C, gate open circuit
Max peak reverse leakage current
RMS isolation voltage
100
TJ = 25°C
50Hz, circuit to base, all terminal shorted,
VINS
2500
V
TJ = 25°C, t = 1s
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Maximum peak gate current
P100
Units Conditions
PGM
8
2
2
W
A
- VGM Maximum peak negative
gate voltage
10
3
V
VGT
Maximum gate voltage required
to trigger
TJ = - 40°C
2
1
TJ = 25°C
Anode Supply = 6V resistive load
Anode Supply = 6V resistive load
TJ = 125°C
IGD
Maximum gate current
required to trigger
90
60
35
TJ = - 40°C
mA
TJ = 25°C
TJ = 125°C
VGD
Maximum gate voltage
that will not trigger
0.2
2
V
TJ = 125°C, rated VDRM applied
TJ = 125°C, rated VDRM applied
IGD
Maximum gate current
that will not trigger
mA
Thermal and Mechanical Specification
Parameter
P100
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 125
2.24
°C
stg
RthJC Max. thermal resistance,
junction to case
K/W DC operation per junction
RthCS Max. thermal resistance,
case to heatsink
0.10
4
K/W Mounting surface, smooth and greased
A mounting compound is recommended and the torque
Nm
T
Mounting torque, base to heatsink
should be checked after a period of 3 hours to allow for the
spread of the compound
wt
Approximate weight
58 (2.0)
g (oz)
3
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P100 Series
Bulletin I27125 rev. A 04/99
Circuit Type and Coding *
Circuit"0"
Circuit"2"
Circuit"3"
TerminalPositions
G3
G1
G2
G1
G1 G2
Schematicdiagram
diagram
AC1
AC2
AC1
AC2
AC2
AC1
G4
G2
(-)
(+)
(-)
(+)
(-)
(+)
SinglePhase
HybridBridge
CommonCathode
SinglePhase
HybridBridge
Doubler
SinglePhase
AllSCR
Bridge
Basicseries
P10.
P12.
P13.
Withvoltage
suppression
P10.K
P12.K
P13.K
Withfree-wheeling
diode
P10.W
-
-
-
-
Withbothvoltage
suppressionand
free-wheelingdiode
P10.KW
* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W
Outline Table
12.7 (0.50)
12.7 (0.50)
1.65 (0.06)
63.5 (2.50)
Faston 6.35x0.8 (0.25x0.03)
45 (1.77)
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
4
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P100 Series
Bulletin I27125 rev. A 04/99
60
50
40
30
20
10
0
2
K
/
W
3
5
K
/
W
180°
(Sine )
K
/
W
7
K
/
W
P100 Se rie s
T
= 125°C
J
0
5
10
15
20
2
5
25
50
75
100
125
To ta l Outp ut C urre nt (A)
Ma ximum Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
15
10
5
20
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
15
RMS Limit
10
RMS Lim it
Conduc tion a ng le
Cond uc t ion Pe riod
5
P100 Se rie s
P100 Se rie s
T
= 125°C
J
T = 125°C
J
Pe r Junc tio n
Pe r Junc tion
0
0
0
5
10
15
0
5
10
15
20
Ave ra g e O n-sta te C urre n t (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 2 - On-state Power Loss Characteristics
1000
100
10
130
120
110
100
90
Fully Turne d .on
T
= 25 °C
J
180°
(Sine )
180°
T
= 125 °C
J
(Re c t)
P100 Se rie s
Pe r Mo d ule
P100 Se rie s
80
Pe r Junc tion
1
70
0
1
2
3
4
5
6
0
5
10
15
20
25
30
Insta n ta ne o u s O n-sta te Vo lta g e (V)
Tota l Outp ut Curre nt (A)
Fig.5-On-stateVoltageDropCharacteristics
Fig.4-CurrentRatingsCharacteristics
5
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P100 Series
Bulletin I27125 rev. A 04/99
350
400
350
300
250
200
150
100
At Any Ra te d Lo a d Co nd itio n And With
Ma ximum Non Re p e titive Surg e Cu rre nt
Ve rsus Pulse Tra in Dura tio n. Co n tro l
Of C o nd u ctio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lie d Fo llo wing Surg e.
RRM
Initia l T = 125°C
J
In itia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
300
250
200
150
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
P100 Se rie s
Pe r Jun c tio n
P100 Se rie s
Pe r Jun c tio n
1
10
100
0.01
0.1
1
Num be r O f Eq ua l Amp litud e Ha lf Cyc le Current Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig.6-MaximumNon-RepetitiveSurgeCurrent
Fig.7-MaximumNon-RepetitiveSurgeCurrent
10
Ste a dy Sta te Va lue :
R
thJC
= 2.24K/W
(DC O pe ra tion)
1
P100 Se rie s
0.1
Pe r Junc tio n
0.01
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig.8-ThermalImpedanceZthJCCharacteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 m s
(4) PGM = 10 W, tp = 5 ms
a )Re c omm e nd e d lo a d lin e for
ra te d di/ dt : 10V, 20 ohms, tr <= 1µs
b )Re c omm e nd e d lo a d lin e for
ra te d d i/ d t : 10 V, 65 o hm s, tr <= 1µs
(a )
(b)
(4)
(3)
(2) (1)
VG D
IGD
Fre q ue nc y Lim ite d
By PG(AV)
P100 Se rie s
0.1
0.001
0.01
0.1
1
10
100
Insta nta n e o us Ga te C urre nt (A)
Fig.9-GateCharacteristics
6
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P100 Series
Bulletin I27125 rev. A 04/99
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Data and specifications subject to change without notice.
7
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