P422KW [INFINEON]
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS; 钝化组装的电路元件
| 型号： | P422KW |
| 厂家： | 
Infineon |
| 描述： | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
40A
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
Description
The P400 series of Integrated Power Circuits con-
sists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
ID
P400
40
Units
A
@ TC
80
°C
IFSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
385
400
745
680
A
A
I2t
A2s
A2s
I2√t
7450
400 to 1200
2500
A2√s
V
VRRM
V
V
INS
TJ
- 40 to 125
°C
1
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P400 Series
Bulletin I2776 rev. E 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximumrepetitive VRSM maximumnon-
VDRM maximum
IRRMmax.
@ TJ max.
Typenumber
peak reverse voltage
repetitive peak reverse repetitive peak off-state
voltage
V
voltage
V
V
mA
10
P401, P421, P431
P402, P422, P432
P403, P423, P433
P404, P424, P434
P405, P425, P435
400
500
700
400
600
600
800
900
800
1000
1200
1100
1300
1000
1200
On-state Conduction
Parameter
P400
Units Conditions
ID
Maximum DC output current
40
A
A
@ TC = 80°C, full bridge circuits
ITSM
IFSM
Max. peak one-cycle
non-repetitive on-state
or forward current
385
400
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
325
340
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
745
680
530
480
7450
A2s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
I2√t
Maximum I2√t for fusing
A2√s
t = 0.1 to 10ms, no voltage reapplied
I2t for time tx = I2√t . √tx
VT(TO)1 Low value of threshold voltage
VT(TO)2 High value of threshold voltage
0.83
1.03
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
rt1
Low level value of on-state
slope resistance
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
9.61
7.01
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)), TJ = TJ max.
VTM
VFM
Max. peak on-state or
forward voltage drop
TJ = 25°C, ITM = π x IT(AV)
TJ = 25°C, ITM = π x IF(AV)
V
1.4
di/dt
Maximum non repetitive rate of
rise of turned on current
TJ = 125°C from 0.67 VDRM
200
A/µs
ITM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs
IH
IL
Maximum holding current
Maximum latching current
130
250
mA
mA
TJ = 25°C anode supply = 6V, resistive load
TJ = 25°C anode supply = 6V, resistive load
2
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P400 Series
Bulletin I2776 rev. E 04/99
Blocking
Parameter
P400
200
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = 125°C, exponential to 0.67 VDRM gate open
IRRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current at VRRM, VDRM
10
mA
µA
TJ = 125°C, gate open circuit
Max peak reverse leakage current
RMS isolation voltage
100
TJ = 25°C
50Hz, circuit to base, all terminal shorted,
VINS
2500
V
TJ = 25°C, t = 1s
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Maximum peak gate current
P400
Units Conditions
PGM
8
2
2
W
A
- VGM Maximum peak negative
gate voltage
10
3
V
VGT
Maximum gate voltage required
to trigger
TJ = - 40°C
2
1
TJ = 25°C
Anode Supply = 6V resistive load
Anode Supply = 6V resistive load
TJ = 125°C
IGD
Maximum gate current
required to trigger
90
60
35
TJ = - 40°C
mA
TJ = 25°C
TJ = 125°C
VGD
Maximum gate voltage
that will not trigger
0.2
2
V
TJ = 125°C, rated VDRM applied
TJ = 125°C, rated VDRM applied
IGD
Maximum gate current
that will not trigger
mA
Thermal and Mechanical Specification
Parameter
P400
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 125
1.05
°C
stg
RthJC Max. thermal resistance,
junction to case
K/W DC operation per junction
RthCS Max. thermal resistance,
case to heatsink
0.10
4
K/W Mounting surface, smooth and greased
A mounting compound is recommended and the torque
Nm
T
Mounting torque, base to heatsink
should be checked after a period of 3 hours to allow for the
spread of the compound
wt
Approximate weight
58 (2.0)
g (oz)
3
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P400 Series
Bulletin I2776 rev. E 04/99
Circuit Type and Coding *
Circuit"0"
Circuit"2"
Circuit"3"
TerminalPositions
G3
G1
G1 G2
G1
G2
Schematicdiagram
diagram
AC1
AC2
AC1
AC2
AC2
AC1
G4
G2
(-)
(+)
(-)
(+)
(-)
(+)
SinglePhase
HybridBridge
CommonCathode
SinglePhase
HybridBridge
Doubler
SinglePhase
AllSCR
Bridge
Basicseries
P40.
P42.
P43.
Withvoltage
suppression
P40.K
P42.K
P43.K
Withfree-wheeling
diode
P40.W
-
-
-
-
Withbothvoltage
suppressionand
free-wheelingdiode
P40.KW
* To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W
Outline Table
12.7 (0.50)
12.7 (0.50)
1.65 (0.06)
63.5 (2.50)
Faston 6.35x0.8 (0.25x0.03)
45 (1.77)
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
4
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P400 Series
Bulletin I2776 rev. E 04/99
120
100
80
60
40
20
0
t
h
S
A
180°
(Sine )
2
3
K
/
W
W
W
K
/
5
K
/
P400 Se rie s
T = 125°C
J
10
K
/
W
0
5
10 15
20 25 30
35
4
0
25
50
75
100
125
To ta l Outp ut C urre n t (A)
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig.1-CurrentRatingsNomogram(1ModulePerHeatsink)
30
25
20
15
10
5
40
DC
180°
180°
120°
90°
60°
30°
35
30
25
20
15
10
5
120°
90°
60°
30°
RMS Limit
RMS Limit
C ond uc tio n Pe rio d
Co nd uc tion a ngle
P400 Se rie s
P400 Se rie s
T = 125°C
T = 125°C
J
J
Pe r Junc tio n
Pe r Junc tio n
0
0
0
5
10
15
20
0
5
10
15
20
25
30
35
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig.3-On-statePowerLossCharacteristics
Fig.2-On-statePowerLossCharacteristics
130
1000
Fully Turn e d -o n
T
= 25 °C
J
120
110
100
90
T
= 125 °C
J
100
10
1
180°
(Re c t)
180°
(Sine )
P400 Se rie s
Pe r Junc tion
P400 Se rie s
Pe r Mo dule
80
70
0
5
10 15 20 25 30 35 40 45
Tota l Output Curre nt (A)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Insta nta ne ous On-sta te Vo lta g e (V)
Fig.5-On-stateVoltageDropCharacteristics
Fig.4-CurrentRatingsCharacteristics
5
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P400 Series
Bulletin I2776 rev. E 04/99
400
350
300
250
200
150
350
At An y Ra te d Lo a d C o n d itio n And With
Ma xim um No n Rep etitive Surg e Cu rre nt
Ve rsus Pulse Tra in Du ra tio n. Co ntro l
Of C o nd u ctio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lie d Fo llo wing Surg e .
RRM
325
300
275
250
225
200
175
150
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
P400 Serie s
Pe r Junc tio n
P400 Se rie s
Pe r Jun c tio n
1
10
100
0.01
0.1
1
Nu mb e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre nt Pulse s (N)
Pulse Tra in Dura tion (s)
Fig.6-MaximumNon-RepetitiveSurgeCurrent
Fig.7-MaximumNon-RepetitiveSurgeCurrent
10
Ste a d y Sta te Va lue :
R
= 1.05 K/ W
thJC
(DC Op e ra tio n)
1
P400 Se rie s
Pe r Junc tion
0.1
0.01
0.0001
0.001
0.01
0.1
1
Sq ua re Wa ve Pulse Dura tion (s)
Fig.8-ThermalImpedanceZthJC Characteristics
100
10
1
Re c ta ng ula r g a te pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a )Re c om me n de d loa d line for
ra te d di/ dt : 10V, 20 oh ms, tr <= 1µs
b )Re c om me n de d loa d line for
ra te d d i/ d t : 10 V, 65 ohm s, tr <= 1µs
(a )
(b)
(4)
(3)
(2) (1)
VGD
IGD
Fre q ue nc y Limite d
By PG(AV)
P400 Se rie s
0.1
0.001
0.01
0.1
1
10
100
Insta nta ne ous Ga te Curre nt (A)
Fig.9-GateCharacteristics
6
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P400 Series
Bulletin I2776 rev. E 04/99
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7
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