PMB2314-T [INFINEON]

Prescaler Circuit 2.1 GHz PMB 2314T; 预分频电路2.1 GHz的PMB 2314T
PMB2314-T
型号: PMB2314-T
厂家: Infineon    Infineon
描述:

Prescaler Circuit 2.1 GHz PMB 2314T
预分频电路2.1 GHz的PMB 2314T

光电二极管 时钟
文件: 总14页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ICs for Communication  
Prescaler Circuit 2.1 GHz  
PMB 2314T  
V1.5  
Preliminary Data Sheet 7.96  
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Previous Releases:  
PMB 2314 V1.2 08.95  
Page  
8
Subjects (changes since last revision)  
dynamic range  
errata sheet removed  
supply current values corrected  
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Previous Releases:  
Page  
PMB 2314 V1.3 11.95  
Subjects (changes since last revision)  
internal cross talk eliminated by a metall mask redesign. Plug and play replacement  
of PMB 2314 V1.3  
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Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the  
integrated circuit.  
&KDUDFWHULVWLFV  
The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics  
specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply  
at TA = 25 °C and the given supply voltage.  
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In the operating range the functions given in the circuit description are fullfilled.  
For detailed technical information about “Processing Guidelines” and “Quality Assurance” for ICs, see our Product  
Overview “ICs for Communications”  
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This edition was realized using the software system FrameMaker®.  
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© Siemens AG 1996. All Rights Reserved.  
As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not  
for applications, processes and circuits implemented within components or assemblies.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany  
or the Siemens Companies and Representatives worldwide. (see address list).  
Due to technical requirements components may contain dangerous substances. For information on the type in  
question please contact your nearest Siemens Office, Semiconductor Group.  
Siemens AG is an approved CECC manufacturer.  
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Preliminary Data  
Bipolar IC  
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The IC is designed for use in mobile radio communication  
devices up to 2100 MHz and upconversion systems up 2500  
MHz.  
Due to its low power consumption and low phase noise  
generation it is suitable for the use in battery powered handheld  
systems, e.g. PCN, DECTand wireless LANs.  
Low supply voltage down to 2.7V.  
It can be switched to a low-power standby mode.  
Internal current source at the emitter follower output. No external resistor needed in typical  
applications.  
The divide ratio is 1:64/65 or 1:128/129 depending on the external circuit configuration.  
Semiconductor Group  
3
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The differential inputs of the IC may be connected either balanced or single ended. In the latter case  
the unused input must be RF-grounded with a capacitor (about 10 pF) with a low serial inductance.  
Depending on the logic level at SW input the basic divide ratio of the ECL-stages is fixed to 1:64/65  
or 1:128/129. The MOD input determines whether modulus 1:n or 1:n+1 (n=64 or 128 according to  
SW-level) is active.  
The IC can be switched to a low-power standby mode (input STB).  
The MOD input is TTL/CMOS compatible.  
The emitter follower output is CMOS compatible according to the application circuit on page 11. The  
minimum logic swing is 0.8 Vpp.  
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HIGH = US-0.1 V to US  
1:64/65  
LOW = GND to 0.8 V or open 1:128/129  
02'  
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HIGH = 2.0 V to US or open  
LOW = GND to 0.8 V  
1:64/1:128  
1:65/1:129  
HIGH = US-0.1 V to US  
LOW = GND to 0.8 V  
Divider  
Q=HIGH, STANDBY-mode  
Semiconductor Group  
4
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I2  
I1  
1
2
3
8
7
US  
STB  
MOD  
SW  
Q
6
5
GND  
4
Pin 1 RF-input I1  
Pin 2 supply voltage US  
Pin 3 divide ratio 1:64/65 - 1:128/129 control input (SW)  
Pin 4 output Q  
Pin 5 GND  
Pin 6 modulus 1:n/n+1 (n=64 or 128) control input (MOD)  
Pin 7 standby mode control input (STB)  
Pin 8 RF-input I2  
Semiconductor Group  
5
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S
2
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STB  
I2  
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ref  
4
8
Q
1:64/65  
1:128/129  
1
3
I1  
I
6
MOD  
SW  
5
GND  
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6
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7A = -40 to 85 °C  
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PD[ꢂ  
Supply voltage  
8S  
8I  
-0.3  
6
2
V
V
Input level  
8S=0V  
(Pin 1; Pin 8)  
Voltage swing  
(Pin 1 to 8)  
8I18  
-2  
2
V
V
Input level  
8SW,  
-0.3  
8S+0.7V  
8S=2.7...5.5V  
(Pin 3; Pin 6; Pin 7)  
8MOD,  
8STB,  
or 5.5V if  
8S+0.7V >  
5.5V  
Output level  
(Pin 4)  
8Q  
ꢀ,Q  
8S  
V
Outpu current  
(Pin 4)  
5
mA  
Junction temperature  
Storage temperature  
7j  
125  
125  
185  
°C  
7S  
-65  
°C  
Thermal resistance  
system-ambient  
5thsa  
K/W  
The maximum ratings may not be exceeded under any circumstances, not even momentarily and  
individually, as permanent damage to the IC will result.  
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2.7  
max.  
Supply Voltage  
8S  
ƒ
5.5  
V
Input frequency  
100  
-40  
2300  
85  
MHz  
°C  
Ambient temperature  
7A  
Within the operational range the IC operates as described in the circuit description. The AC / DC  
characteristic limits are not guaranteed.  
Semiconductor Group  
7
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6XSSO\ꢀYROWDJHꢀ9S=2.7 to 5.5V  
$PELHQWꢀWHPSHUDWXUHꢀ7A = -20 to 85 °C (refered to the test circuit)  
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Supply current  
normal operation  
,
2.7  
2.8  
2.9  
3.3  
3.4  
3.5  
0.1  
mA  
mA  
mA  
mA  
inputs RF-grounded,  
8S=2.7, 7A = 25 °C,  
STB= 9S output open  
S
,
inputs RF-grounded,  
8S=4.0, 7A = 25 °C,  
STB= 9S output open  
S
,
inputs RF-grounded,  
9S=5.5, 7A = 25 °C,  
STB= 9S output open  
S
Supply current  
standby-mode  
,
inputs RF-grounded,  
output open, STB = GND  
STB  
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Input level  
dynamic range  
3in  
3in  
-20  
-20  
4
dBm  
dBm  
100-1500MHz (sine wave)  
2100 MHz ( diagram 2 )  
-3  
2XWSXWꢀ4  
Output logic swing 8Q  
1
1.1  
1.1  
400  
VPP  
VPP  
µA  
&L <= 12pF, 5L=2kΩ  
&L <= 8pF  
8Q  
0.8  
Internal current  
source  
,
see block diagram  
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Voltage high  
9SWH  
9SWL  
9S-0.1  
9S  
0.8  
60  
30  
V
Voltage low  
GND  
V
Input current high  
Input current low  
,
µA  
µA  
SW=9S  
SWH  
ꢀ,SWL  
SW=GND  
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Voltage high  
9MODH  
9MODL  
2.3  
9S  
V
Voltage low  
GND  
0.8  
50  
V
Input current high  
Input current low  
,
µA  
µA  
MOD=9S  
MODH  
ꢀ,MODL  
120  
MOD=GND  
AC /DC characteristics involve the spread of values guaranteed within the specified suply voltage and ambient  
temperature range. Typical characteristics are the median of the production.  
Semiconductor Group  
8
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6XSSO\ꢀYROWDJHꢀ9S=2.7 to 5.5V  
$PELHQWꢀWHPSHUDWXUHꢀ7A = -20 to 85 °C (refered to the test circuit)  
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Voltage high  
9STBH  
9STBL  
8S-0.1  
9S  
0.8  
30  
60  
V
Voltage low  
GND  
V
Input current high  
Input current low  
'HOD\ꢀWLPHV  
,
µA  
µA  
STB=9S  
STBH  
ꢀ,STBL  
STB=GND  
Wset  
8
MOD setup time  
(diagram 1)  
14  
ns  
AC /DC characteristics involve the spread of values guaranteed within the specified supply voltage  
and ambient temperature range. Typical characteristics are the median of the production.  
Semiconductor Group  
9
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Input sensitivity and output logic swing measurement  
spectrum  
analyser  
U
GND  
Q
Frequency  
counter  
5
4
U
S
U
USW  
S
6
MOD  
3
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U
Scope  
U
S
2
7
STB  
U
R
L
Signal  
generator  
(50Ω)  
1n  
U
I
8
1
C
load  
U
I2  
1n  
1n  
50Ω  
C
<= 8pF inc.  
load  
jig and instrument  
input capacitance  
R only needed for  
L
enhanced driving  
capability.  
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MOD  
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GND  
5
Q
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ca. 1nF  
TBB 206  
MOD  
6
SW  
PMB 2306  
3
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PMB 2307  
STB  
U
S
PD  
U
2
1
7
S
I2  
I1  
8
1nF  
1n  
LF  
VCO  
(SW connected for 1:64/65 divider ratio)  
Semiconductor Group  
11  
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MOD  
W
set  
Q
Changes of the mod-level made up to  
this time will still affect the Q-output  
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PMB 2314 T V1.3 Dynamic Range 2.7V Ratio 65  
20  
10  
0
Operating Window  
-10  
-20  
-30  
-40  
-50  
0
500  
1000  
1500  
2000  
2500  
f / [ MHz ]  
'LDJUDPꢀꢌ  
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13  
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5,2 max  
5
4
-0,2  
0,7  
+0,06  
0,19  
6±0,2  
+0,15  
0,7 max  
0,35  
1,27  
3,81  
(Dual-in-Line-Package, Small-Outline)  
20 A 8 DIN 41870 T16 (SMD)  
Semiconductor Group  
14  
7.96  

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